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Researcher profile

V. G. Karpov

V. G. Karpov contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.dis-nncond-mat.mes-hallcond-mat.mtrl-scicond-mat.otherphysics.ed-phquant-ph

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Published work

13 published item(s)

preprint2020arXiv

Numerical modeling of nonohmic percolation conduction and Poole Frenkel laws

We present a numerical model that simulates the current-voltage (I-V) characteristics of materials that exhibit percolation conduction. The model consists of a two dimensional grid of exponentially different resistors in the presence of an external electric field. We obtained exponentially non-ohmic I-V characteristics validating earlier analytical predictions and consistent with multiple experimental observations of the Poole-Frenkel laws in non-crystalline materials. The exponents are linear in voltage for samples smaller than the correlation length of percolation cluster L, and square root in voltage for samples larger than L.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Percolation with plasticity for neuromorphic systems

We develop a theory of percolation with plasticity systems (PWPs) rendering properties of interest for neuromorphic computing. Unlike the standard percolation between two large electrodes, they have multiple ($N\gg 1$) interfaces and exponentially large number ($N!$) of conductive pathways between them. These pathways consist of non-ohmic random resistors that can undergo bias induced nonvolatile modifications (plasticity). The neuromorphic properties of PWPs include: multi-valued memory, high dimensionality and nonlinearity capable of transforming input data into spatiotemporal patterns, tunably fading memory ensuring outputs that depend more on recent inputs, and no need for massive interconnects. A few conceptual examples of functionality here are random number generation, matrix-vector multiplication, and associative memory. Understanding PWP topology, statistics, and operations opens a field of its own calling upon further theoretical and experimental insights.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Pulse percolation conduction and multi-value memory

We develop a theory of pulse conduction in percolation type of materials such as noncrystalline semiconductors and nano-metal compounds. For short voltage pulses, the corresponding electric currents are inversely proportional to the pulse length and exhibit significant nonohmicity due to strong local fields in resistive regions of the percolation bonds. These fields can trigger local switching events incrementally changing bond resistances in response to pulse trains. Our prediction opens a venue to a class of multi-value nonvolatile memory implementable with a variety of materials.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Physics in the information age: qualitative methods (with examples from quantum mechanics)

The traditional pedagogical paradigm in physics is based on a deductive approach. However, with the recent advances in information technology, we are facing a dramatic increase in the amount of readily available information; hence, the ability to memorize the material and provide rigorous derivations lacks significance. Our success in navigating the current "sea" of information depends increasingly on our skills in pattern recognition and prompt qualitative analysis. Inductive learning (using examples and intuition-based) is most suitable for the development of such skills. This needed change in our pedagogical paradigm remains yet to be addressed in physics curricula. We propose that incorporating inductive elements in teaching -by infusing qualitative methods - will better prepare us to deal with the new information landscape. These methods bring the learning experience closer to the realities of active research. As an example, we are presenting a compendium for teaching qualitative methods in quantum mechanics, a traditionally non-intuitive subject.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

The Poole-Frenkel laws and a pathway to multi-valued memory

We revisit the mechanism of Poole-Frenkel non-ohmic conduction in materials of non-volatile memory. Percolation theory is shown to explain both the Poole and Frenkel dependencies corresponding to the cases of respectively small and large samples compared to the correlation radii of their percolation clusters. The applied bias modifies a limited number of microscopic resistances forming the percolation pathways. That understanding opens a pathway to multi-valued non-volatile memory and related neural network applications.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Evidence of rapid tin whisker growth under electron irradiation

We have investigated the influence of electric field on tin whisker growth. Sputtered tin samples were exposed to electron radiation, and were subsequently found to have grown whiskers, while sister control samples did not exhibit whisker growth. Statistics on the whisker properties are reported. The results are considered encouraging for substantiating an electrostatic theory of whisker growth, and the technique offers promise for investigating early stages of whisker growth in general and establishing whisker-related accelerated life testing protocols.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Field induced nucleation in the presence of a metal electrode

We consider the effect of metal electrodes on the polarizability and nucleation of metal phases responsible for the operations of the emerging solid state memory. Our analysis is based on the image charge approach. We find results for point dipoles in static and oscillatory fields as well as an erect cylindrical nucleus near metal surfaces in resistive switching memories. We predict a large increase in polarizability and nucleation rate due to the metal electrode effects.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Hot spot runaway in thin film photovoltaics and related structures

We show that thin film diode structures, such as photovoltaics and light emitting arrays, can undergo zero threshold localized thermal runaway leading to thermal and electrical nonuniformities spontaneously emerging in originally uniform systems. The linear stability analysis is developed for a system of thermally and electrically coupled two discrete diodes, and for a distributed system. These results are verified with numerical modeling that is not limited to small fluctuations. The discovered instability negatively affects the device performance and reliability. It follows that these problems can be mitigated by properly designing the device geometry and thermal insulation.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Coupled electron--heat transport in nonuniform thin film semiconductor structures

A theory of transverse electron transport coupled with heat transfer in semiconductor thin films is developed conceptually modeling structures of modern electronics. The transverse currents generate Joule heat with positive feedback through thermally activated conductivity. This can lead to instability known as thermal runaway, or hot spot, or reversible thermal breakdown. A theory here is based on the optimum fluctuation method modified to describe saddle stationary points determining the rate of such instabilities and conditions under which they evolve. Depending on the material and system parameters, the instabilities appear in a manner of phase transitions, similar to either nucleation or spinodal decomposition.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Plasmonic mediated nucleation of resonant nano-cavities in metallic layers

We predict plasmonic mediated nucleation of pancake shaped resonant nano-cavities in metallic layers that are penetrable to laser fields. The underlying physics is that the cavity provides a narrow plasmonic resonance that maximizes its polarizability in an external field. The resonance yields a significant energy gain making the formation of such cavities highly favorable. Possible implications include nano-optics and generation of the dielectric bits in conductive films that underlie the existing optical recording phase change technology.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Electric field driven insulator-to-metal phase transitions

We show that strong enough electric fields can trigger nucleation of needle-shaped metallic embryos in insulators, even when the metal phase is energetically unfavorable without the field. This general phenomenon is due to the gigantic induced dipole moments acquired by the embryos which cause sufficient electrostatic energy gain. Nucleation kinetics are exponentially accelerated by the field-induced suppression of nucleation barriers. Our theory opens the venue of field driven material synthesis. In particular, we briefly discuss synthesis of metallic hydrogen at standard pressure.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Electric field induced nucleation: An alternative pathway to metallic hydrogen

Electric field induced nucleation is introduced as a possible mechanism to realize a metallic phase of hydrogen. Analytical expressions are derived for the nucleation probabilities of both thermal and quantum nucleation in terms of material parameters, temperature, and the applied field. Our results show that the insulator-metal transition can be driven by an electric field within a reasonable temperature range and at much lower pressures than the current paradigm of P > 400 GPa. Both static and oscillating fields are considered and practical implementations are discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Thermodynamics of second phase conductive filaments

We present a theory of second phase conductive filaments in phase transformable systems; applications include threshold switches, phase change memory, and shunting in thin film structures. We show that the average filament parameters can be described thermodynamically. In agreement with the published data, the predicted filament current voltage characteristics exhibit negative differential resistance vanishing at high currents where the current density becomes a bulk material property. Our description is extendible to filament transients and allows for efficient numerical simulation.

0 citations0 reviewsNo code linkedOpen access