Researcher profile

G. Serpen

G. Serpen contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2020arXiv

Numerical modeling of nonohmic percolation conduction and Poole Frenkel laws

We present a numerical model that simulates the current-voltage (I-V) characteristics of materials that exhibit percolation conduction. The model consists of a two dimensional grid of exponentially different resistors in the presence of an external electric field. We obtained exponentially non-ohmic I-V characteristics validating earlier analytical predictions and consistent with multiple experimental observations of the Poole-Frenkel laws in non-crystalline materials. The exponents are linear in voltage for samples smaller than the correlation length of percolation cluster L, and square root in voltage for samples larger than L.

preprint2020arXiv

Percolation with plasticity for neuromorphic systems

We develop a theory of percolation with plasticity systems (PWPs) rendering properties of interest for neuromorphic computing. Unlike the standard percolation between two large electrodes, they have multiple ($N\gg 1$) interfaces and exponentially large number ($N!$) of conductive pathways between them. These pathways consist of non-ohmic random resistors that can undergo bias induced nonvolatile modifications (plasticity). The neuromorphic properties of PWPs include: multi-valued memory, high dimensionality and nonlinearity capable of transforming input data into spatiotemporal patterns, tunably fading memory ensuring outputs that depend more on recent inputs, and no need for massive interconnects. A few conceptual examples of functionality here are random number generation, matrix-vector multiplication, and associative memory. Understanding PWP topology, statistics, and operations opens a field of its own calling upon further theoretical and experimental insights.

preprint2020arXiv

Pulse percolation conduction and multi-value memory

We develop a theory of pulse conduction in percolation type of materials such as noncrystalline semiconductors and nano-metal compounds. For short voltage pulses, the corresponding electric currents are inversely proportional to the pulse length and exhibit significant nonohmicity due to strong local fields in resistive regions of the percolation bonds. These fields can trigger local switching events incrementally changing bond resistances in response to pulse trains. Our prediction opens a venue to a class of multi-value nonvolatile memory implementable with a variety of materials.