Abstract
We revisit the mechanism of Poole-Frenkel non-ohmic conduction in materials of non-volatile memory. Percolation theory is shown to explain both the Poole and Frenkel dependencies corresponding to the cases of respectively small and large samples compared to the correlation radii of their percolation clusters. The applied bias modifies a limited number of microscopic resistances forming the percolation pathways. That understanding opens a pathway to multi-valued non-volatile memory and related neural network applications.
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