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F. Fuchs

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Published work

10 published item(s)

preprint2022arXiv

Polarization power spectra and dust cloud morphology

In the framework of studies of the CMB polarization and its Galactic foregrounds, the angular power spectra of thermal dust polarization maps have revealed an intriguing E/B asymmetry and a positive TE correlation. In interpretation studies of these observations, magnetized ISM dust clouds have been treated as filamentary structures only; however, sheet-like shapes are also supported by observational and theoretical evidence. In this work, we study the influence of cloud shape and its connection to the local magnetic field on angular power spectra of thermal dust polarization maps. We simulate realistic filament-like and sheet-like interstellar clouds, and generate synthetic maps of their thermal dust polarized emission using the software $Asterion$. We compute their polarization power spectra in multipole range $\ell \in [100,500]$ and quantify the E/B power asymmetry through the $R_{EB}$ ratio, and the correlation coefficient $r^{TE}$ between T and E modes. We quantify the dependence of $R_{EB}$ and $r^{TE}$ values on the offset angle (between longest cloud axis and magnetic field) and inclination angle (between line-of-sight and magnetic field) for both cloud shapes embedded either in a regular or a turbulent magnetic field. We find that both cloud shapes cover the same regions of the ($R_{EB}$, $r^{TE}$) parameter space. The dependence on inclination and offset angles are similar for both shapes although sheet-like structures generally show larger scatter. In addition to the known dependence on the offset angle, we find a strong dependence of $R_{EB}$ and $r^{TE}$ on the inclination angle. The fact that filament-like and sheet-like structures may lead to polarization power spectra with similar ($R_{EB}$, $r^{TE}$) values complicates their interpretation. In future analyses, this degeneracy should be accounted for as well as the connection to the magnetic field geometry.

preprint2015arXiv

High precision vector magnetometry with uniaxial quantum centers in silicon carbide

We show that uniaxial color centers in silicon carbide with hexagonal lattice structure can be used to measure not only the strength but also the polar angle of the external magnetic field with respect to the defect axis with high precision. The method is based on the optical detection of multiple spin resonances in the silicon vacancy defect with quadruplet ground state. We achieve a perfect agreement between the experimental and calculated spin resonance spectra without any fitting parameters, providing angle resolution of a few degrees in the magnetic field range up to several millitesla. Our approach is suitable for ensembles as well as for single spin-3/2 color centers, allowing for vector magnetometry on the nanoscale at ambient conditions.

preprint2014arXiv

Engineering near infrared single photon emitters in ultrapure silicon carbide

Quantum emitters hosted in crystalline lattices are highly attractive candidates for quantum information processing, secure networks and nanosensing. For many of these applications it is necessary to have control over single emitters with long spin coherence times. Such single quantum systems have been realized using quantum dots, colour centres in diamond, dopants in nanostructures and molecules . More recently, ensemble emitters with spin dephasing times on the order of microseconds and room-temperature optically detectable magnetic resonance have been identified in silicon carbide (SiC), a compound being highly compatible to up-to-date semiconductor device technology. So far however, the engineering of such spin centres in SiC on single-emitter level has remained elusive. Here, we demonstrate the control of spin centre density in ultrapure SiC over 8 orders of magnitude, from below $10^{9}$ to above $10^{16} \,$cm$^{-3}$ using neutron irradiation. For a low irradiation dose, a fully photostable, room-temperature, near infrared (NIR) single photon emitter can clearly be isolated, demonstrating no bleaching even after $10^{14}$ excitation cycles. Based on their spectroscopic fingerprints, these centres are identified as silicon vacancies, which can potentially be used as qubits, spin sensors and maser amplifiers.

preprint2014arXiv

Excitation and recombination dynamics of vacancy-related spin centers in silicon carbide

We generate silicon vacancy related defects in high-quality epitaxial silicon carbide layers by means of electron irradiation. By controlling the irradiation fluence, the defect concentration is varied over several orders of magnitude. We establish the excitation profile for optical pumping of these defects and evaluate the optimum excitation wavelength of 770 nm. We also measure the photoluminescence dynamics at room temperature and find a monoexponential decay with a characteristic lifetime of 6.1 ns. The integrated photoluminescence intensity depends linear on the excitation power density up to 20 kW/cm$^2$, indicating a relatively small absorption cross section of these defects.

preprint2014arXiv

Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide

Quantum systems can provide outstanding performance in various sensing applications, ranging from bioscience to nanotechnology. Atomic-scale defects in silicon carbide are very attractive in this respect because of the technological advantages of this material and favorable optical and radio frequency spectral ranges to control these defects. We identified several, separately addressable spin-3/2 centers in the same silicon carbide crystal, which are immune to nonaxial strain fluctuations. Some of them are characterized by nearly temperature independent axial crystal fields, making these centers very attractive for vector magnetometry. Contrarily, the zero-field splitting of another center exhibits a giant thermal shift of -1.1 MHz/K at room temperature, which can be used for thermometry applications. We also discuss a synchronized composite clock exploiting spin centers with different thermal response.

preprint2014arXiv

Ripples and Charge Puddles in Graphene on a Metallic Substrate

Graphene on a dielectric substrate exhibits spatial doping inhomogeneities, forming electron-hole puddles. Understanding and controlling the latter is of crucial importance for unraveling many of graphene's fundamental properties at the Dirac point. Here we show the coexistence and correlation of charge puddles and topographic ripples in graphene decoupled from the metallic substrate it was grown on. The analysis of interferences of Dirac fermion-like electrons yields a linear dispersion relation, indicating that graphene on a metal can recover its intrinsic electronic properties.

preprint2014arXiv

Room-temperature near-infrared silicon carbide nanocrystalline emitters based on optically aligned spin defects

Bulk silicon carbide (SiC) is a very promising material system for bio-applications and quantum sensing. However, its optical activity lies beyond the near infrared spectral window for in-vivo imaging and fiber communications due to a large forbidden energy gap. Here, we report the fabrication of SiC nanocrystals and isolation of different nanocrystal fractions ranged from 600 nm down to 60 nm in size. The structural analysis reveals further fragmentation of the smallest nanocrystals into ca. 10-nm-size clusters of high crystalline quality, separated by amorphization areas. We use neutron irradiation to create silicon vacancies, demonstrating near infrared photoluminescence. Finally, we detect, for the first time, room-temperature spin resonances of these silicon vacancies hosted in SiC nanocrystals. This opens intriguing perspectives to use them not only as in-vivo luminescent markers, but also as magnetic field and temperature sensors, allowing for monitoring various physical, chemical and biological processes.

preprint2012arXiv

Intrinsic defects in silicon carbide LED as a perspective room temperature single photon source in near infrared

Generation of single photons has been demonstrated in several systems. However, none of them satisfies all the conditions, e.g. room temperature functionality, telecom wavelength operation, high efficiency, as required for practical applications. Here, we report the fabrication of light emitting diodes (LEDs) based on intrinsic defects in silicon carbide (SiC). To fabricate our devices we used a standard semiconductor manufacturing technology in combination with high-energy electron irradiation. The room temperature electroluminescence (EL) of our LEDs reveals two strong emission bands in visible and near infrared (NIR), associated with two different intrinsic defects. As these defects can potentially be generated at a low or even single defect level, our approach can be used to realize electrically driven single photon source for quantum telecommunication and information processing.

preprint2012arXiv

Resonant addressing and manipulation of silicon vacancy qubits in silicon carbide

Several systems in the solid state have been suggested as promising candidates for spin-based quantum information processing. In spite of significant progress during the last decade, there is a search for new systems with higher potential [D. DiVincenzo, Nature Mat. 9, 468 (2010)]. We report that silicon vacancy defects in silicon carbide comprise the technological advantages of semiconductor quantum dots and the unique spin properties of the nitrogen-vacancy defects in diamond. Similar to atoms, the silicon vacancy qubits can be controlled under the double radio-optical resonance conditions, allowing for their selective addressing and manipulation. Furthermore, we reveal their long spin memory using pulsed magnetic resonance technique. All these results make silicon vacancy defects in silicon carbide very attractive for quantum applications.

preprint2010arXiv

Ab-initio description of heterostructural alloys: Thermodynamic and structural properties of Mg_x Zn_{1-x} O and Cd_x Zn_{1-x} O

Pseudobinary heterostructural alloys of ZnO with MgO or CdO are studied by composing the system locally of clusters with varying ratio of cations. We investigate fourfold (wurtzite structure) and sixfold (rocksalt structure) coordination of the atoms. By means of density functional theory we study a total number of 256 16-atom clusters divided into 22 classes for the wurtzite structure and 16 classes for the rocksalt structure for each of the alloy systems. The fraction with which each cluster contributes to the alloy is determined for a given temperature T and composition x within (i) the generalized quasi-chemical approximation, (ii) the model of a strict-regular solution, and (iii) the model of microscopic decomposition. From the cluster fractions we derive conclusions about the miscibility and the critical compositions at which the average crystal structure changes. Thermodynamic properties such as the mixing free energy and the mixing entropy are investigated for the three different statistics. We discuss the consequences of the two different local lattice structures for characteristic atomic distances, cohesive energies, and the alloys' elasticities. The differences in the properties of Mg_x Zn_{1-x} O and Cd_x Zn_{1-x} O are explained and discussed.