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Uttam Singisetti

Uttam Singisetti appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallphysics.app-phcond-mat.otherquant-ph

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Published work

7 published item(s)

preprint2022arXiv

4.4 kV $β$-Ga$_2$O$_3$ Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm$^2$

Field-plated (FP) depletion-mode MOVPE-grown $β$-Ga$_2$O$_3$ lateral MESFETs are realized with superior reverse breakdown voltages and ON currents. A sandwiched SiN$_x$ dielectric field plate design was utilized that prevents etching-related damage in the active region and a deep mesa-etching was used to reduce reverse leakage. The device with L$_{GD}$ = 34.5 $μ$m exhibits an ON current (I$_{DMAX}$) of 56 mA/mm, a high I$_{ON}$/I$_{OFF}$ ratio $>$ 10$^8$ and a very low reverse leakage until catastrophic breakdown at $\sim$ 4.4kV. The highest measurable V$_{BR}$ recorded was 4.57 kV (L$_{GD}$ = 44.5 $μ$m). An LFOM of 132 MW/cm$^2$ was calculated for a V$_{BR}$ of $\sim$ 4.4 kV. The reported results are the first $>$ 4kV-class Ga$_2$O$_3$ transistors to surpass the theoretical FOM of Silicon. These are also the highest I$_{DMAX}$ and lowest R$_{ON}$ values achieved simultaneously for any $β$-Ga$_2$O$_3$ device with V$_{BR}$ $>$ 4kV to date. This work highlights that high breakdown voltages (V$_{BR}$), high lateral figure of merit (LFOM) and high ON currents can be achieved simultaneously in $β$-Ga$_2$O$_3$ lateral transistors.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Effective Electronic Structure of Monoclinic $β-(Al_xGa_{1-x})_2O_3$ alloy semiconductor

In this article, the electronic band structure $β-(Al_xGa_{1-x})_2O_3$ alloy system is calculated with $β-Ga_2O_3$ as the bulk crystal. The technique of band unfolding is implemented to obtain the effective bandstructure \textit{(EBS)} for aluminium fractions varying between 12.5\% and 62.5\% with respect to the gallium atoms. A 160 atom supercell is used to model the disordered system that is generated using the technique of special quasirandom structures which mimics the site correlation of a truly random alloy and reduces the configurational space that arises due to the vast enumeration of alloy occupation sites. The impact of the disorder is then evaluated on the electron effective mass and bandgap which is calculated under the generalized gradient approximation \textit{(GGA)}. The EBS of disordered systems gives an insight into the effect of the loss of translational symmetry on the band topology which manifests as band broadening and can be used to evaluate disorder induced scattering rates and electron lifetimes. This technique of band unfolding can be further extended to alloy phonon dispersion and subsequently phonon lifetimes can also be evaluated from the band broadening.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Low field electron mobility in $α-Ga_{2}O_{3}$: An ab-initio approach

The $α$ phase of $Ga_{2}O_{3}$ is an ultra-wideband semiconductor with potential power electronics applications. In this work, we calculate the low field electron mobility in $α-Ga_{2}O_{3}$ from first principles. The 10 atom unit cell contributes to 30 phonon modes and the effect of each mode is taken into account for the transport calculation. The phonon dispersion and the Raman spectrum are calculated under the density functional perturbation theory formalism and compared with experiments. The IR strength is calculated from the dipole moment at the $Γ$ point of the Brillouin zone. The electron-phonon interaction elements (EPI) on a dense reciprocal space grid is obtained using the Wannier interpolation technique. The polar nature of the material is accounted for by interpolating the non-polar and polar EPI elements independently as the localized nature of the Wannier functions are not suitable for interpolating the long-range polar interaction elements. For polar interaction the full phonon dispersion is taken into account. The electron mobility is then calculated including the polar, non-polar and ionized impurity scattering.

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preprint2020arXiv

Low field transport calculations in 2-dimensional electron gas in $\mathrm{β\mbox{-}(Al_{x}Ga_{1-x})_{2}O_{3}/Ga_{2}O_{3}}$ heterostructures

$\mathrmβ$-Gallium oxide ($\mathrm{β\mbox{-}Ga_{2}O_{3}}$) is an emerging widebandgap semiconductor for potential application in power and RF electronics applications. Initial theoretical calculation on a 2-dimensional electron gas (2DEG) in $\mathrm{β\mbox{-}(Al_{x}Ga_{1-x})_{2}O_{3}/Ga_{2}O_{3}}$ heterostructures show the promise for high speed transistors. However, the experimental results do not get close to the predicted mobility values. In this work, We perform more comprehensive calculations to study the low field 2DEG transport properties in the $\mathrm{β\mbox{-}(Al_{x}Ga_{1-x})_{2}O_{3}/Ga_{2}O_{3}}$ heterostructure. A self-consistent Poisson-Schrodinger simulation of heterostructure is used to obtain the subband energies and wavefunctions. The electronic structure, assuming confinement in a particular direction, and the phonon dispersion is calculated based on first principle methods under DFT and DFPT framework. Phonon confinement is not considered for the sake of simplicity. The different scattering mechanisms that are included in the calculation are phonon (polar and non-polar), remote impurity, alloy and interface-roughness. We include the full dynamic screening polar optical phonon screening. We report the temperature dependent low-field electron mobility.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Thermoelectric Transport Coefficients in Mono-layer MoS2 and WSe2 Role of Substrate, Interface Phonons, Plasmon, and Dynamic Screening

The thermoelectric transport coefficients of electrons in two recently emerged transition metal dichalcogenides(TMD), MoS2 and WSe2, are calculated by solving Boltzmann Transport equation and coupled electrical and thermal current equations using Rode iterative technique. Scattering from localized donor impurities, acoustic deformation potential, longitudinal optical (LO) phonons, and substrate induced remote phonon modes are taken into account. Hybridization of TMD plasmon with remote phonon modes is investigated. Dynamic screening under linear polarization response is explored in TMDs sitting on a dielectric environment and the screened electron-phonon coupling matrix elements are calculated. The effect of screening and substrate induced remote phonon mediated scattering on the transport coefficients of the mentioned materials is explained. The transport coefficients are obtained for a varying range of temperature and doping density for three different types of substrates SiO2, Al2O3, and HfO2. The thermoelectric properties of interest including Seebeck coefficient, Peltier coefficient, and electronic thermal conductivity are calculated.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Design and Analysis of High Frequency InN Tunnel Transistors

This work reports the design and analysis of an n-type tunneling field effect transistor based on InN. The tunneling current is evaluated from the fundamental principles of quantum mechanical tunneling and semiclassical carrier transport. We investigate the RF performance of the device. High transconductance of 2 mS/um and current gain cut-off frequency of around 460 GHz makes the device suitable for THz applications. A significant reduction in gate to drain capacitance is observed under relatively higher drain bias. In this regard, the avalanche breakdown phenomenon in highly doped InN junctions is analyzed quantitatively for the first time and is compared to that of Si and InAs.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Surface optical phonon scattering in N-polar GaN quantum well channels

N-polar GaN channel mobility is important for high frequency device applications. In this Letter, we report the theoretical calculations on the surface optical (SO) phonon scattering rate of two-dimensional electron gas (2-DEG) in N-polar GaN quantum well channels with high-k dielectrics. The effect of SO phonons on 2-DEG mobility was found to be small at >5 nm channel thickness. However, the SO mobility in 3 nm N-polar GaN channels with high-k dielectrics is low and limits the total mobility. The SO scattering for SiNx dielectric GaN was found to be negligible due to its high SO phonon energy.

0 citations0 reviewsNo code linkedOpen access