Researcher profile

Uttam Singisetti

Uttam Singisetti contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

cond-mat.mtrl-sci physics.app-ph cond-mat.mes-hall cond-mat.other quant-ph

Trust snapshot

Quick read

Trust 19 - UnverifiedVerification L1Unclaimed author

5works

0followers

5topics

4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2022arXiv

4.4 kV $β$-Ga$_2$O$_3$ Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm$^2$

Field-plated (FP) depletion-mode MOVPE-grown $β$-Ga$_2$O$_3$ lateral MESFETs are realized with superior reverse breakdown voltages and ON currents. A sandwiched SiN$_x$ dielectric field plate design was utilized that prevents etching-related damage in the active region and a deep mesa-etching was used to reduce reverse leakage. The device with L$_{GD}$ = 34.5 $μ$m exhibits an ON current (I$_{DMAX}$) of 56 mA/mm, a high I$_{ON}$/I$_{OFF}$ ratio $>$ 10$^8$ and a very low reverse leakage until catastrophic breakdown at $\sim$ 4.4kV. The highest measurable V$_{BR}$ recorded was 4.57 kV (L$_{GD}$ = 44.5 $μ$m). An LFOM of 132 MW/cm$^2$ was calculated for a V$_{BR}$ of $\sim$ 4.4 kV. The reported results are the first $>$ 4kV-class Ga$_2$O$_3$ transistors to surpass the theoretical FOM of Silicon. These are also the highest I$_{DMAX}$ and lowest R$_{ON}$ values achieved simultaneously for any $β$-Ga$_2$O$_3$ device with V$_{BR}$ $>$ 4kV to date. This work highlights that high breakdown voltages (V$_{BR}$), high lateral figure of merit (LFOM) and high ON currents can be achieved simultaneously in $β$-Ga$_2$O$_3$ lateral transistors.

preprint2022arXiv

Effective Electronic Structure of Monoclinic $β-(Al_xGa_{1-x})_2O_3$ alloy semiconductor

In this article, the electronic band structure $β-(Al_xGa_{1-x})_2O_3$ alloy system is calculated with $β-Ga_2O_3$ as the bulk crystal. The technique of band unfolding is implemented to obtain the effective bandstructure \textit{(EBS)} for aluminium fractions varying between 12.5\% and 62.5\% with respect to the gallium atoms. A 160 atom supercell is used to model the disordered system that is generated using the technique of special quasirandom structures which mimics the site correlation of a truly random alloy and reduces the configurational space that arises due to the vast enumeration of alloy occupation sites. The impact of the disorder is then evaluated on the electron effective mass and bandgap which is calculated under the generalized gradient approximation \textit{(GGA)}. The EBS of disordered systems gives an insight into the effect of the loss of translational symmetry on the band topology which manifests as band broadening and can be used to evaluate disorder induced scattering rates and electron lifetimes. This technique of band unfolding can be further extended to alloy phonon dispersion and subsequently phonon lifetimes can also be evaluated from the band broadening.

preprint2020arXiv

Low field electron mobility in $α-Ga_{2}O_{3}$: An ab-initio approach

The $α$ phase of $Ga_{2}O_{3}$ is an ultra-wideband semiconductor with potential power electronics applications. In this work, we calculate the low field electron mobility in $α-Ga_{2}O_{3}$ from first principles. The 10 atom unit cell contributes to 30 phonon modes and the effect of each mode is taken into account for the transport calculation. The phonon dispersion and the Raman spectrum are calculated under the density functional perturbation theory formalism and compared with experiments. The IR strength is calculated from the dipole moment at the $Γ$ point of the Brillouin zone. The electron-phonon interaction elements (EPI) on a dense reciprocal space grid is obtained using the Wannier interpolation technique. The polar nature of the material is accounted for by interpolating the non-polar and polar EPI elements independently as the localized nature of the Wannier functions are not suitable for interpolating the long-range polar interaction elements. For polar interaction the full phonon dispersion is taken into account. The electron mobility is then calculated including the polar, non-polar and ionized impurity scattering.

preprint2020arXiv

Low field transport calculations in 2-dimensional electron gas in $\mathrm{β\mbox{-}(Al_{x}Ga_{1-x})_{2}O_{3}/Ga_{2}O_{3}}$ heterostructures

$\mathrmβ$-Gallium oxide ($\mathrm{β\mbox{-}Ga_{2}O_{3}}$) is an emerging widebandgap semiconductor for potential application in power and RF electronics applications. Initial theoretical calculation on a 2-dimensional electron gas (2DEG) in $\mathrm{β\mbox{-}(Al_{x}Ga_{1-x})_{2}O_{3}/Ga_{2}O_{3}}$ heterostructures show the promise for high speed transistors. However, the experimental results do not get close to the predicted mobility values. In this work, We perform more comprehensive calculations to study the low field 2DEG transport properties in the $\mathrm{β\mbox{-}(Al_{x}Ga_{1-x})_{2}O_{3}/Ga_{2}O_{3}}$ heterostructure. A self-consistent Poisson-Schrodinger simulation of heterostructure is used to obtain the subband energies and wavefunctions. The electronic structure, assuming confinement in a particular direction, and the phonon dispersion is calculated based on first principle methods under DFT and DFPT framework. Phonon confinement is not considered for the sake of simplicity. The different scattering mechanisms that are included in the calculation are phonon (polar and non-polar), remote impurity, alloy and interface-roughness. We include the full dynamic screening polar optical phonon screening. We report the temperature dependent low-field electron mobility.

preprint2013arXiv

Surface optical phonon scattering in N-polar GaN quantum well channels

N-polar GaN channel mobility is important for high frequency device applications. In this Letter, we report the theoretical calculations on the surface optical (SO) phonon scattering rate of two-dimensional electron gas (2-DEG) in N-polar GaN quantum well channels with high-k dielectrics. The effect of SO phonons on 2-DEG mobility was found to be small at >5 nm channel thickness. However, the SO mobility in 3 nm N-polar GaN channels with high-k dielectrics is low and limits the total mobility. The SO scattering for SiNx dielectric GaN was found to be negligible due to its high SO phonon energy.

Uttam Singisetti

Quick read

Decide how to stay connected

How to connect with this researcher

Open a focused conversation when the fit is right

See the researcher in context

Building this graph slice

5 published item(s)

4.4 kV $β$-Ga$_2$O$_3$ Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm$^2$

Effective Electronic Structure of Monoclinic $β-(Al_xGa_{1-x})_2O_3$ alloy semiconductor

Low field electron mobility in $α-Ga_{2}O_{3}$: An ab-initio approach

Low field transport calculations in 2-dimensional electron gas in $\mathrm{β\mbox{-}(Al_{x}Ga_{1-x})_{2}O_{3}/Ga_{2}O_{3}}$ heterostructures

Surface optical phonon scattering in N-polar GaN quantum well channels