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Andrei Osinsky

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physics.app-ph cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2022arXiv

4.4 kV $β$ -Ga $_2$ O $_3$ Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm $^2$

Field-plated (FP) depletion-mode MOVPE-grown $β$ -Ga $_2$ O $_3$ lateral MESFETs are realized with superior reverse breakdown voltages and ON currents. A sandwiched SiN $_x$ dielectric field plate design was utilized that prevents etching-related damage in the active region and a deep mesa-etching was used to reduce reverse leakage. The device with L $_{GD}$ = 34.5 $μ$ m exhibits an ON current (I $_{DMAX}$ ) of 56 mA/mm, a high I $_{ON}$ /I $_{OFF}$ ratio $>$ 10 $^8$ and a very low reverse leakage until catastrophic breakdown at $\sim$ 4.4kV. The highest measurable V $_{BR}$ recorded was 4.57 kV (L $_{GD}$ = 44.5 $μ$ m). An LFOM of 132 MW/cm $^2$ was calculated for a V $_{BR}$ of $\sim$ 4.4 kV. The reported results are the first $>$ 4kV-class Ga $_2$ O $_3$ transistors to surpass the theoretical FOM of Silicon. These are also the highest I $_{DMAX}$ and lowest R $_{ON}$ values achieved simultaneously for any $β$ -Ga $_2$ O $_3$ device with V $_{BR}$ $>$ 4kV to date. This work highlights that high breakdown voltages (V $_{BR}$ ), high lateral figure of merit (LFOM) and high ON currents can be achieved simultaneously in $β$ -Ga $_2$ O $_3$ lateral transistors.

preprint2022arXiv

Low Resistance Ohmic Contact On Epitaxial MOVPE-grown $β$ -Ga $_2$ O $_3$ and $β$ -(Al $_x$ Ga $_1-x$ ) $_2$ O $_3$ Films

We report on the realization of record low resistance Ohmic contacts to MOVPE-grown heavily Si-doped $β$ -Ga $_2$ O $_3$ and $β$ -(Al $_x$ Ga $_1-x$ ) $_2$ O $_3$ epitaxial films. Transfer length measurement (TLM) patterns were fabricated on the heavily Si-doped homoepitaxial $β$ -Ga $_2$ O $_3$ films with electron concentration (n) ranging from 1.77 to 3.23e20 cm^-3. Record low specific contact resistance and total contact resistance (Rc) of 1.62e-7 Ohm.cm^2 and 0.023 Ohm.mm were realized for $β$ -Ga $_2$ O $_3$ : Si films with n > 3e20 cm^-3. TLM structures were also fabricated on heavily Si doped coherently strained $β$ -(Al $_x$ Ga $_1-x$ ) $_2$ O $_3$ (x=12%, 17% and 22%) films. The film with 12% Al composition (n=1.23e20 cm^-3) showed \r{ho}c of 5.85e-6 Ohm.cm^2, but it increased to 2.19e-4 Ohm.cm^2 for a layer with a 22% Al composition. Annealing the samples post metal deposition has generally led to a decrease in contact resistance, but for high Al content $β$ -(Al $_x$ Ga $_1-x$ ) $_2$ O $_3$ , the contact resistance did not change significantly after the annealing process. The low contact resistance values measured in this work are very promising for the fabrication of high frequency power devices.

preprint2016arXiv

Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors

A dual-channel AlN/GaN/AlN/GaN high electron mobility transistor (HEMT) architecture is proposed, simulated, and demonstrated that suppresses gate lag due to surface-originated trapped charge. Dual two-dimensional electron gas (2DEG) channels are utilized such that the top 2DEG serves as an equipotential that screens potential fluctuations resulting from surface trapped charge. The bottom channel serves as the transistor's modulated channel. Two device modeling approaches have been performed as a means to guide the device design and to elucidate the relationship between the design and performance metrics. The modeling efforts include a self-consistent Poisson-Schrodinger solution for electrostatic simulation as well as hydrodynamic three-dimensional device modeling for three-dimensional electrostatics, steady-state, and transient simulations. Experimental results validated the HEMT design whereby homo-epitaxial growth on free-standing GaN substrates and fabrication of same-wafer dual-channel and recessed-gate AlN/GaN HEMTs have been demonstrated. Notable pulsed-gate performance has been achieved by the fabricated HEMTs through a gate lag ratio of 0.86 with minimal drain current collapse while maintaining high levels of dc and rf performance.

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Andrei Osinsky

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3 publications

4.4 kV $β$ -Ga $_2$ O $_3$ Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm $^2$

Low Resistance Ohmic Contact On Epitaxial MOVPE-grown $β$ -Ga $_2$ O $_3$ and $β$ -(Al $_x$ Ga $_1-x$ ) $_2$ O $_3$ Films

Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors

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Andrei Osinsky

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3 publications

4.4 kV βββ-Ga2_22​O3_33​ Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm2^22

Low Resistance Ohmic Contact On Epitaxial MOVPE-grown βββ-Ga2_22​O3_33​ and βββ-(Alx_xx​Ga1−x_1-x1​−x)2_22​ O3_33​ Films

Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors

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4.4 kV $β$ -Ga $_2$ O $_3$ Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm $^2$

Low Resistance Ohmic Contact On Epitaxial MOVPE-grown $β$ -Ga $_2$ O $_3$ and $β$ -(Al $_x$ Ga $_1-x$ ) $_2$ O $_3$ Films