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Krishnendu Ghosh

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cond-mat.mtrl-sci cond-mat.mes-hall physics.comp-ph quant-ph

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preprint2021arXiv

Spin-spin interactions in solids from mixed all-electron and pseudopotential calculations $-$ a path to screening materials for spin qubits

Understanding the quantum dynamics of spin defects and their coherence properties requires accurate modeling of spin-spin interaction in solids and molecules, for example by using spin Hamiltonians with parameters obtained from first-principles calculations. We present a real-space approach based on density functional theory for the calculation of spin-Hamiltonian parameters, where only selected atoms are treated at the all-electron level, while the rest of the system is described with the pseudopotential approximation. Our approach permits calculations for systems containing more than 1000 atoms, as demonstrated for defects in diamond and silicon carbide. We show that only a small number of atoms surrounding the defect needs to be treated at the all-electron level, in order to obtain an overall all-electron accuracy for hyperfine and zero-field splitting tensors. We also present results for coherence times, computed with the cluster correlation expansion method, highlighting the importance of accurate spin-Hamiltonian parameters for quantitative predictions of spin dynamics.

preprint2019arXiv

DFT-FE -- A massively parallel adaptive finite-element code for large-scale density functional theory calculations

We present an accurate, efficient and massively parallel finite-element code, DFT-FE, for large-scale ab-initio calculations (reaching $\sim 100,000$ electrons) using Kohn-Sham density functional theory (DFT). DFT-FE is based on a local real-space variational formulation of the Kohn-Sham DFT energy functional that is discretized using a higher-order adaptive spectral finite-element (FE) basis, and treats pseudopotential and all-electron calculations in the same framework, while accommodating non-periodic, semi-periodic and periodic boundary conditions. We discuss the main aspects of the code, which include, the various strategies of adaptive FE basis generation, and the different approaches employed in the numerical implementation of the solution of the discrete Kohn-Sham problem that are focused on significantly reducing the floating point operations, communication costs and latency. We demonstrate the accuracy of DFT-FE by comparing the energies, ionic forces and periodic cell stresses on a wide range of problems with popularly used DFT codes. Further, we demonstrate that DFT-FE significantly outperforms widely used plane-wave codes---both in CPU-times and wall-times, and on both non-periodic and periodic systems---at systems sizes beyond a few thousand electrons, with over $5-10$ fold speedups in systems with more than 10,000 electrons. The benchmark studies also highlight the excellent parallel scalability of DFT-FE, with strong scaling demonstrated on up to 192,000 MPI tasks.

preprint2015arXiv

Thermoelectric Transport Coefficients in Mono-layer MoS2 and WSe2 Role of Substrate, Interface Phonons, Plasmon, and Dynamic Screening

The thermoelectric transport coefficients of electrons in two recently emerged transition metal dichalcogenides(TMD), MoS2 and WSe2, are calculated by solving Boltzmann Transport equation and coupled electrical and thermal current equations using Rode iterative technique. Scattering from localized donor impurities, acoustic deformation potential, longitudinal optical (LO) phonons, and substrate induced remote phonon modes are taken into account. Hybridization of TMD plasmon with remote phonon modes is investigated. Dynamic screening under linear polarization response is explored in TMDs sitting on a dielectric environment and the screened electron-phonon coupling matrix elements are calculated. The effect of screening and substrate induced remote phonon mediated scattering on the transport coefficients of the mentioned materials is explained. The transport coefficients are obtained for a varying range of temperature and doping density for three different types of substrates SiO2, Al2O3, and HfO2. The thermoelectric properties of interest including Seebeck coefficient, Peltier coefficient, and electronic thermal conductivity are calculated.

preprint2013arXiv

Design and Analysis of High Frequency InN Tunnel Transistors

This work reports the design and analysis of an n-type tunneling field effect transistor based on InN. The tunneling current is evaluated from the fundamental principles of quantum mechanical tunneling and semiclassical carrier transport. We investigate the RF performance of the device. High transconductance of 2 mS/um and current gain cut-off frequency of around 460 GHz makes the device suitable for THz applications. A significant reduction in gate to drain capacitance is observed under relatively higher drain bias. In this regard, the avalanche breakdown phenomenon in highly doped InN junctions is analyzed quantitatively for the first time and is compared to that of Si and InAs.