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Ulrich Kuetgens

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2 publications

preprint2013arXiv

Finite element analysis of surface-stress effects in the Si lattice-parameter measurement

A stress exists in solids surfaces, similarly to liquids, also if the underlying bulk material is stress-free. This paper investigates the surface stress effect on the measured value of the Si lattice parameter used to determine the Avogadro constant by counting Si atoms. An elastic-film model has been used to provide a surface load in a finite element analysis of the lattice strain of the x-ray interferometer crystal used to measure the lattice parameter. Eventually, an experiment is proposed to work a lattice parameter measurement out so that there is a visible effect of the surface stress.

preprint2010arXiv

Measurement of the \{220\} lattice-plane spacing of a 28^{28}Si crystal

The spacing of the \{220\} lattice planes of a 28^{28}Si crystal was measured by combined x-ray and optical interferometry to a 3.5×10−93.5\times 10^{-9} relative accuracy. The result is d220=(192014712.67±0.67)d_{220}=(192014712.67 \pm 0.67) am, at 20.0 ∘^\circC and 0 Pa. This value is greater by (1.9464±0.0067)×10−9d220(1.9464 \pm 0.0067)\times 10^{-9} d_{220} than the spacing in natural Si, a difference which confirms quantum mechanics calculations. Subsequently, this crystal has been used to determine the Avogadro constant by counting the Si atoms, a key step towards a realization of the mass unit based on a conventional value of the Planck or the Avogadro constants.

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