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Uli Lemmer

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Published work

3 published item(s)

preprint2024arXiv

Freeform terahertz structures fabricated by multi-photon lithography and metal coating

Direct-write multi-photon laser lithography (MPL) combines highest resolution on the nanoscale with essentially unlimited 3D design freedom. Over the previous years, the groundbreaking potential of this technique has been demonstrated in various application fields, including micromechanics, material sciences, microfluidics, life sciences as well as photonics, where in-situ printed optical coupling elements offer new perspectives for package-level system integration. However, millimeter-wave (mmW) and terahertz (THz) devices could not yet leverage the unique strengths of MPL, even though the underlying devices and structures could also greatly benefit from 3D freeform microfabrication. One of the key challenges in this context is the fact that functional mmW and THz structures require materials with high electrical conductivity and low dielectric losses, which are not amenable to structuring by multi-photon polymerization. In this work, we introduce and experimentally demonstrate a novel approach that allows to leverage MPL for fabricating high-performance mmW and THz structures with hitherto unachieved functionalities. Our concept exploits in-situ printed polymer templates that are selectively coated through highly directive metal deposition techniques in combination with precisely aligned 3D-printed shadowing structures. The resulting metal-coated freeform structures offer high surface quality in combination with low dielectric losses and conductivities comparable to bulk material values, while lending themselves to fabrication on planar mmW/THz circuits. We experimentally show the viability of our concept by demonstrating a series of functional THz structures such as THz interconnects, probe tips, and suspended antennas. We believe that our approach offers disruptive potential in the field of mmW and THz technology and may unlock an entirely new realm of laser-based 3D manufacturing.

preprint2016arXiv

Light emission, light detection and strain sensing with nanocrystalline graphene

Graphene is of increasing interest for optoelectronic applications exploiting light detection, light emission and light modulation. Intrinsically light matter interaction in graphene is of a broadband type. However by integrating graphene into optical micro cavities also narrow band light emitters and detectors have been demonstrated. The devices benefit from the transparency, conductivity and processability of the atomically thin material. To this end we explore in this work the feasibility of replacing graphene by nanocrystalline graphene, a material which can be grown on dielectric surfaces without catalyst by graphitization of polymeric films. We have studied the formation of nanocrystalline graphene on various substrates and under different graphitization conditions. The samples were characterized by resistance, optical transmission, Raman, X-ray photoelectron spectroscopy, atomic force microscopy and electron microscopy measurements. The conducting and transparent wafer-scale material with nanometer grain size was also patterned and integrated into devices for studying light-matter interaction. The measurements show that nanocrystalline graphene can be exploited as an incandescent emitter and bolometric detector similar to crystalline graphene. Moreover the material exhibits piezoresistive behavior which makes nanocrystalline graphene interesting for transparent strain sensors.

preprint2011arXiv

Electroluminescence from chirality-sorted (9,7)-semiconducting carbon nanotube devices

We have measured the electroluminescence and photoluminescence of (9,7) semiconducting carbon nanotube devices and demonstrate that the electroluminescence wavelength is determined by the nanotube's chiral index (n,m). The devices were fabricated on Si3N4 membranes by dielectrophoretic assembly of tubes from monochiral dispersion. Electrically driven (9,7) devices exhibit a single Lorentzian shaped emission peak at 825 nm in the visible part of the spectrum. The emission could be assigned to the excitonic E22 interband transition by comparison of the electroluminescence spectra with corresponding photoluminescence excitation maps. We show a linear dependence of the EL peak width on the electrical current, and provide evidence for the inertness of Si3N4 surfaces with respect to the nanotubes optical properties.