Researcher profile

Udo D. Schwarz

Udo D. Schwarz contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sci cond-mat.soft cond-mat.str-el

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preprint2025arXiv

Particle-scale origin of quadrupolar non-affine displacement fields in granular solids

In this work, we identify the local structural defects that control the non-affine displacement fields in jammed disk packings subjected to athermal, quasistatic (AQS) simple shear. While complex non-affine displacement fields typically occur during simple shear, isolated effective quadrupoles are also observed and their probability increases with increasing pressure. We show that the emergence of an isolated effective quadrupole requires the breaking of an interparticle contact that is aligned with low-frequency, spatially extended vibrational modes. Since the Eshelby inhomogeneity problem gives rise to quadrupolar displacement fields in continuum materials, we reformulate and implement Eshelby's equivalent inclusion method (EIM) for jammed disk packings. Using EIM, we show that we can reconstruct the non-affine displacement fields for jammed disk packings in response to applied shear as a sum of discrete Eshelby-like defects that are caused by mismatches in the local stiffnesses of triangles formed from Delaunay triangulation of the disk centers.

preprint2022arXiv

Scalable production of single 2D van der Waals layers through atomic layer deposition: Bilayer silica on metal foils and films

The self-limiting nature of atomic layer deposition (ALD) makes it an appealing option for growing single layers of two-dimensional van der Waals (2D-VDW) materials. In this paper it is demonstrated that a single layer of a 2D-VDW form of SiO2 can be grown by ALD on Au and Pd polycrystalline foils and epitaxial films. The silica was deposited by two cycles of bis (diethylamino) silane and oxygen plasma exposure at 525 K. Initial deposition produced a three-dimensionally disordered silica layer; however, subsequent annealing above 950 K drove a structural rearrangement resulting in 2D-VDW; this annealing could be performed at ambient pressure. Surface spectra recorded after annealing indicated that the two ALD cycles yielded close to the silica coverage obtained for 2D-VDW silica prepared by precision SiO deposition in ultra-high vacuum. Analysis of ALD-grown 2D-VDW silica on a Pd(111) film revealed the co-existence of amorphous and incommensurate crystalline 2D phases. In contrast, ALD growth on Au(111) films produced predominantly the amorphous phase while SiO deposition in UHV led to only the crystalline phase, suggesting that the choice of Si source can enable phase control.

preprint2016arXiv

The role of double TiO2 layers at the interface of FeSe/SrTiO3 superconductors

We determine the surface reconstruction of SrTiO3 used to achieve superconducting FeSe films in experiments, which is different from the 1x1 TiO2 terminated SrTiO3 assumed by most previous theoretical studies. In particular, we identify the existence of a double TiO2 layer at the SrTiO3-FeSe interface that plays two important roles. First, it facilitates the epitaxial growth of FeSe. Second, ab initio calculations reveal a strong tendency for electrons to transfer from an oxygen deficient SrTiO3 surface to FeSe when the double TiO2 layer is present. As a better electron donor than previously proposed interfacial structures, the double layer helps to remove the hole pocket in the FeSe at the Γ point of the Brillouin zone and leads to a band structure characteristic of superconducting samples. The characterization of the interface structure presented here is a key step towards the resolution of many open questions about this novel superconductor.