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U. Kunze

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Published work

3 published item(s)

preprint2009arXiv

Low-temperature ballistic transport in nanoscale epitaxial graphene cross junctions

We report on the observation of inertial-ballistic transport in nanoscale cross junctions fabricated from epitaxial graphene grown on SiC(0001). Ballistic transport is indicated by a negative bend resistance of R12,43 ~ 170 ohm which is measured in a non-local, four-terminal configuration at 4.2 K and which vanishes as the temperature is increased above 80 K.

preprint2009arXiv

Thermopower-enhanced efficiency of Si/SiGe ballistic rectifiers

Injection-type ballistic rectifiers on Si/SiGe are studied with respect to the influence of gate voltage on the transfer resistance RT (output voltage divided by input current) for different positions of a local gate electrode. The rectifiers are trifurcated quantum wires with straight voltage stem and oblique current-injecting leads. Depending on the gate configuration, thermopower contributions arise from nearly-pinched stem regions which either cancel each other or impose upon the ballistic signal with same or opposite polarity. At best, this enhances RT to a maximum value of 470 Ohm close to threshold voltage.

preprint2008arXiv

Non-local Aharonov-Bohm conductance oscillations in an asymmetric quan-tum ring

We investigate ballistic transport and quantum interference in a nanoscale quantum wire loop fab-ricated as a GaAs/AlGaAs field-effect heterostructure. Four-terminal measurements of current and voltage characteristics as a function of top gate voltages show negative bend resistance as a clear signature of ballistic transport. In perpendicular magnetic fields phase-coherent transport leads to Aharonov-Bohm (AB) conductance oscillations which show equal amplitudes in the local and the non-local measurement at a temperature of 1.5 K and above. We attribute this novel observation to the symmetry of the orthogonal cross junctions connecting the four quantum wire leads with the asymmetric quantum wire ring.