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U. Burkhardt

U. Burkhardt contributes to research discovery and scholarly infrastructure.

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Published work

5 published item(s)

preprint2022arXiv

Photovoltaic-ferroelectric materials for the realization of all-optical devices

Following how the electrical transistor revolutionized the field of electronics,the realization of an optical transistor in which the flow of light is controlled optically should open the long-sought era of optical computing and new data processing possibilities. However, such function requires photons to influence each other, an effect which is unnatural in free space. Here it is shown that a ferroelectric and photovoltaic crystal gated optically at the onset of its bandgap energy can act as a photonic transistor. The light-induced charge generation and distribution processes alter the internal electric field and therefore impact the optical transmission with a memory effect and pronounced nonlinearity. The latter results in an optical computing possibility, which does not need to operate coherently. These findings advance efficient room temperature optical transistors, memristors, modulators and all-optical logic circuits.

preprint2020arXiv

Revisiting the Possible 4f7 5d1 Ground State of Gd Impurities in SmB6 by Electron Spin Resonance

The search for topological states in strongly correlated electron systems has renewed the interest in the Kondo insulator SmB6. One of the most intriguing previous results was an anomalous electron spin resonance spectrum in Gd-doped SmB6. This spectrum was attributed to Gd2+ ions because it could be very well decribed by a model considering a change in the valence from Gd3+ to Gd2+, a dynamic Jahn-Teller effect and a 4f7 5d1 ground state in the Hamiltonian. In our work, we have revisited this scenario using electron spin resonance and energy dispersive X-ray spectroscopy measurements. Our results suggest that the resonance is produced by Gd2+ ions; however the resonance stems from an extrinsic oxide impurity phase that lies on the surface of the crystal.

preprint2014arXiv

Heavy fermion and Kondo lattice behavior in the itinerant ferromagnet CeCrGe3

Physical properties of polycrystalline CeCrGe$_{3}$ and LaCrGe$_{3}$ have been investigated by x-ray absorption spectroscopy, magnetic susceptibility $χ(T)$, isothermal magnetization M(H), electrical resistivity $ρ(T)$, specific heat C($T$) and thermoelectric power S($T$) measurements. These compounds are found to crystallize in the hexagonal perovskite structure (space group \textit{P6$_{3}$/mmc}), as previously reported. The $ρ(T)$, $χ(T)$ and C($T$) data confirm the bulk ferromagnetic ordering of itinerant Cr moments in LaCrGe$_{3}$ and CeCrGe$_{3}$ with $T_{C}$ = 90 K and 70 K respectively. In addition a weak anomaly is also observed near 3 K in the C($T$) data of CeCrGe$_{3}$. The T dependences of $ρ$ and finite values of Sommerfeld coefficient $γ$ obtained from the specific heat measurements confirm that both the compounds are of metallic character. Further, the $T$ dependence of $ρ$ of CeCrGe$_{3}$ reflects a Kondo lattice behavior. An enhanced $γ$ of 130 mJ/mol\,K$^{2}$ together with the Kondo lattice behavior inferred from the $ρ(T)$ establish CeCrGe$_{3}$ as a moderate heavy fermion compound with a quasi-particle mass renormalization factor of $\sim$ 45.

preprint2013arXiv

Large resistivity change and phase transition in LiMnAs

Antiferromagnetic semiconductors are new alternative materials for spintronic applications and spin valves. In this work, we report a detailed investigation of two antiferromagnetic semiconductors AMnAs (A = Li, LaO), which are isostructural to the well-known LiFeAs and LaOFeAs superconductors. Here we present a comparison between the structural, magnetic, and electronic properties of LiMnAs, LaOMnAs and related materials. Interestingly, both LiMnAs and LaOMnAs show a variation in resistivity with more than five orders of magnitude, making them particularly suitable for use in future electronic devices. From neutron and X-ray diffraction measurements on LiMnAs we have observed a magnetic phase transition corresponding to the Neel temperature of 373.8 K, and a structural transition from the tetragonal to the cubic phase at 768 K. These experimental results are supported by density functional theory (DFT) calculations.

preprint2010arXiv

Magnetic properties and electronic structures of intermediate valence systems CeRhSi2 and Ce2Rh3Si5

The crystal structures and the physical (magnetic, electrical transport and thermodynamic) properties of the ternary compounds CeRhSi2 and Ce2Rh3Si5 (orthorhombic CeNiSi2- and U2Co3Si5-type structures, respectively) were studied in wide ranges of temperature and magnetic field strength. The results revealed that both materials are valence fluctuating systems, in line with previous literature reports. Direct evidence for valence fluctuations was obtained by means of Ce LIII-edge x-ray absorption spectroscopy and Ce 3d core-level x-ray photoelectron spectroscopy. The experimental data were confronted with the results of ab initio calculations of the electronic band structures in both compounds.