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Tzu-Ming Lu

Tzu-Ming Lu appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.supr-con physics.ins-det quant-ph

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preprint2022arXiv

Induced superconducting pairing in integer quantum Hall edge states

Indium Arsenide (InAs) near surface quantum wells (QWs) are promising for the fabrication of semiconductor-superconductor heterostructures given that they allow for a strong hybridization between the two-dimensional states in the quantum well and the ones in the superconductor. In this work we present results for InAs QWs in the quantum Hall regime placed in proximity of superconducting NbTiN. We observe a negative downstream resistance with a corresponding reduction of Hall (upstream) resistance, consistent with a very high Andreev conversion. We analyze the experimental data using the Landauer-Büttiker formalism, generalized to allow for Andreev reflection processes. We attribute the high efficiency of Andreev conversion in our devices to the large transparency of the InAs/NbTiN interface and the consequent strong hybridization of the QH edge modes with the states in the superconductor.

preprint2022arXiv

Thermal activation of low-density Ga implanted in Ge

The nuclear spins of low-density implanted Ga atoms in Ge are interesting candidates for solid state-based qubits. To date, activation studies of implanted Ga in Ge have focused on high densities. Here we extend activation studies into the low-density regime. We use spreading resistance profiling and secondary ion mass spectrometry to derive electrical activation of Ga ions implanted into Ge as a function of rapid thermal anneal temperature and implant density. We show that for our implant conditions the activation is best for anneal temperatures between 400 and 650 $^\circ$C, with a maximum activation of 64% at the highest fluence. Below 400 $^\circ$C, remaining implant damage results in defects that act as superfluous carriers, and above 650 $^\circ$C, surface roughening and loss of Ga ions are observed. The activation increased monotonically from 10% to 64% as the implant fluence increased from $6\times10^{10}$ to $6\times10^{12}$ cm$^{-2}$. The results provide thermal anneal conditions to be used for initial studies of using low-density Ga atoms in Ge as nuclear spin qubits.

preprint2020arXiv

A physically unclonable function using NV diamond magnetometry and micromagnet arrays

A physically unclonable function (PUF) is an embedded hardware security measure that provides protection against counterfeiting. Here we present our work on using an array of randomly-magnetized micron-sized ferromagnetic bars (micromagnets) as a PUF. We employ a 4 $μ$m thick surface layer of nitrogen-vacancy (NV) centers in diamond to image the magnetic fields from each micromagnet in the array, after which we extract the magnetic polarity of each micromagnet using image analysis techniques. After evaluating the randomness of the micromagnet array PUF and the sensitivity of the NV readout, we conclude by discussing the possible future enhancements for improved security and magnetic readout.