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Researcher profile

Tuo-Hung Hou

Tuo-Hung Hou contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
Emerging TechnologiesComputer Visioncond-mat.mes-halleess.IVHardware ArchitectureMachine LearningNeural and Evolutionary Computing

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Published work

4 published item(s)

preprint2026arXiv

Theoretical Investigation of Performance-Improved Ferroelectric Tunnel Junction Based on Trap-Assisted Tunneling

CMOS-compatible HfO2-based ferroelectric tunnel junction (FTJ) has attracted significant attention as a promising candidate for in-memory computing (IMC) due to its extremely low power consumption. However, conventional FTJs face inherent challenges that hinder their practical applications. Insufficient current density and limited on-off current ratios in FTJs are primarily constrained by their dependence on direct and Fowler-Nordheim tunneling mechanisms. Building on previous experimental results, this paper proposes a trap-assisted tunneling (TAT)-based FTJ that leverages the TAT mechanism to overcome these limitations. A comprehensive FTJ model integrating ferroelectric switching, direct, Fowler-Nordheim tunneling, and TAT mechanisms is developed, enabling detailed analyses of the trap conditions and their impact on performance. Through systematic optimization of trap parameters and device structure, the simulated TAT-based FTJ achieves ultra-high current density and a remarkable on-off current ratio, meeting the nanoscale IMC requirements. The results highlight the potential of TAT-based FTJs as high-performance memory solutions for IMC applications.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Hardware-Robust In-RRAM-Computing for Object Detection

In-memory computing is becoming a popular architecture for deep-learning hardware accelerators recently due to its highly parallel computing, low power, and low area cost. However, in-RRAM computing (IRC) suffered from large device variation and numerous nonideal effects in hardware. Although previous approaches including these effects in model training successfully improved variation tolerance, they only considered part of the nonideal effects and relatively simple classification tasks. This paper proposes a joint hardware and software optimization strategy to design a hardware-robust IRC macro for object detection. We lower the cell current by using a low word-line voltage to enable a complete convolution calculation in one operation that minimizes the impact of nonlinear addition. We also implement ternary weight mapping and remove batch normalization for better tolerance against device variation, sense amplifier variation, and IR drop problem. An extra bias is included to overcome the limitation of the current sensing range. The proposed approach has been successfully applied to a complex object detection task with only 3.85\% mAP drop, whereas a naive design suffers catastrophic failure under these nonideal effects.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Methodology for Realizing VMM with Binary RRAM Arrays: Experimental Demonstration of Binarized-ADALINE Using OxRAM Crossbar

In this paper, we present an efficient hardware mapping methodology for realizing vector matrix multiplication (VMM) on resistive memory (RRAM) arrays. Using the proposed VMM computation technique, we experimentally demonstrate a binarized-ADALINE (Adaptive Linear) classifier on an OxRAM crossbar. An 8x8 OxRAM crossbar with Ni/3-nm HfO2/7 nm Al-doped-TiO2/TiN device stack is used. Weight training for the binarized-ADALINE classifier is performed ex-situ on UCI cancer dataset. Post weight generation the OxRAM array is carefully programmed to binary weight-states using the proposed weight mapping technique on a custom-built testbench. Our VMM powered binarized-ADALINE network achieves a classification accuracy of 78% in simulation and 67% in experiments. Experimental accuracy was found to drop mainly due to crossbar inherent sneak-path issues and RRAM device programming variability.

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preprint2020arXiv

SLIM: Simultaneous Logic-in-Memory Computing Exploiting Bilayer Analog OxRAM Devices

Von Neumann architecture based computers isolate/physically separate computation and storage units i.e. data is shuttled between computation unit (processor) and memory unit to realize logic/ arithmetic and storage functions. This to-and-fro movement of data leads to a fundamental limitation of modern computers, known as the memory wall. Logic in-Memory (LIM) approaches aim to address this bottleneck by computing inside the memory units and thereby eliminating the energy-intensive and time-consuming data movement. However, most LIM approaches reported in literature are not truly "simultaneous" as during LIM operation the bitcell can be used only as a Memory cell or only as a Logic cell. The bitcell is not capable of storing both the Memory/Logic outputs simultaneously. Here, we propose a novel 'Simultaneous Logic in-Memory' (SLIM) methodology that allows to implement both Memory and Logic operations simultaneously on the same bitcell in a non-destructive manner without losing the previously stored Memory state. Through extensive experiments we demonstrate the SLIM methodology using non-filamentary bilayer analog OxRAM devices with NMOS transistors (2T-1R bitcell). Detailed programming scheme, array level implementation and controller architecture are also proposed. Furthermore, to study the impact of introducing SLIM array in the memory hierarchy, a simple image processing application (edge detection) is also investigated. It has been estimated that by performing all computations inside the SLIM array, the total Energy Delay Product (EDP) reduces by ~ 40x in comparison to a modern-day computer. EDP saving owing to reduction in data transfer between CPU Memory is observed to be ~ 780x.

0 citations0 reviewsNo code linkedOpen access