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Toshiya Okazaki

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Published work

2 published item(s)

preprint2012arXiv

Detection of Photons Emitted from Single Er Atoms in Energy Dispersive X-ray Spectroscopy

Detecting the photons emitted from single quantum objects is highly desired to diagnose nano-scale devices. It has been, however, believed very difficult to sense single atoms in optical spectroscopy due to the inferior detection efficiency. We demonstrate here the successful detection of the characteristic x-ray signals from single Er atoms in energy dispersive x-ray spectroscopy (EDX). Highly focused electron probe in an aberration-corrected scanning transmission electron microscope (STEM) was used to excite the single Er atoms aligned in carbon cages, namely the peapod. The intensities of Er L and M lines from single Er atom were found to be 104 ~ 105 times less than that of the N-edge of electron energy-loss spectroscopy (EELS), suggesting the intrinsic difficulty to sense single atoms in X-ray spectroscopy. Nevertheless, this work will certainly ensure the possibilities to obtain X-ray spectra from single atoms and to evaluate the fluorescence yield at single atom basis, therefore the technique will likely find wide fields of applications in nano-physics research.

preprint2010arXiv

Semiconductor-enriched single wall carbon nanotube networks applied to field effect transistors

Substantial progress on field effect transistors "FETs" consisting of semiconducting single wall carbon nanotubes "s-SWNTs" without detectable traces of metallic nanotubes and impurities is reported. Nearly perfect removal of metallic nanotubes is confirmed by optical absorption, Raman measurements, and electrical measurements. This outstanding result was made possible in particular by ultracentrifugation (150 000 g) of solutions prepared from SWNT powders using polyfluorene as an extracting agent in toluene. Such s-SWNTs processable solutions were applied to realize FET, embodying randomly or preferentially oriented nanotube networks prepared by spin coating or dielectrophoresis. Devices exhibit stable p-type semiconductor behavior in air with very promising characteristics. The on-off current ratio is 10^5, the on-current level is around 10 $μ$A, and the estimated hole mobility is larger than 2 cm2 / V s.