Researcher profile

Kenji Hata

Kenji Hata contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2020arXiv

Towards Fairness in Visual Recognition: Effective Strategies for Bias Mitigation

Computer vision models learn to perform a task by capturing relevant statistics from training data. It has been shown that models learn spurious age, gender, and race correlations when trained for seemingly unrelated tasks like activity recognition or image captioning. Various mitigation techniques have been presented to prevent models from utilizing or learning such biases. However, there has been little systematic comparison between these techniques. We design a simple but surprisingly effective visual recognition benchmark for studying bias mitigation. Using this benchmark, we provide a thorough analysis of a wide range of techniques. We highlight the shortcomings of popular adversarial training approaches for bias mitigation, propose a simple but similarly effective alternative to the inference-time Reducing Bias Amplification method of Zhao et al., and design a domain-independent training technique that outperforms all other methods. Finally, we validate our findings on the attribute classification task in the CelebA dataset, where attribute presence is known to be correlated with the gender of people in the image, and demonstrate that the proposed technique is effective at mitigating real-world gender bias.

preprint2010arXiv

Semiconductor-enriched single wall carbon nanotube networks applied to field effect transistors

Substantial progress on field effect transistors "FETs" consisting of semiconducting single wall carbon nanotubes "s-SWNTs" without detectable traces of metallic nanotubes and impurities is reported. Nearly perfect removal of metallic nanotubes is confirmed by optical absorption, Raman measurements, and electrical measurements. This outstanding result was made possible in particular by ultracentrifugation (150 000 g) of solutions prepared from SWNT powders using polyfluorene as an extracting agent in toluene. Such s-SWNTs processable solutions were applied to realize FET, embodying randomly or preferentially oriented nanotube networks prepared by spin coating or dielectrophoresis. Devices exhibit stable p-type semiconductor behavior in air with very promising characteristics. The on-off current ratio is 10^5, the on-current level is around 10 $μ$A, and the estimated hole mobility is larger than 2 cm2 / V s.