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Researcher profile

Torben Winzer

Torben Winzer contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sciphysics.opticscond-mat.other

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Published work

9 published item(s)

preprint2014arXiv

Graphene as Gain Medium for Broadband Lasers

In contrast to conventional structures, efficient non-radiative carrier recombination counteracts the appearance of optical gain in graphene. Based on a microscopic and fully quantum-mechanical study of the coupled carrier, phonon, and photon dynamics in graphene, we present a strategy to obtain a long-lived gain: Integrating graphene into a photonic crystal nanocavity and applying a high-dielectric substrate gives rise to pronounced coherent light emission suggesting the design of graphene-based laser devices covering a broad spectral range.

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preprint2014arXiv

Microscopic description of intraband absorption in graphene: the occurrence of transient negative differential transmission

We present a microscopic explanation of the controversially discussed transient negative differential transmission observed in degenerate optical pump-probe measurements in graphene. Our approach is based on the density matrix formalism allowing a time- and momentum-resolved study of carrier-light, carrier-carrier, and carrier-phonon interaction on microscopic footing. We show that phonon-assisted optical intraband transitions give rise to transient absorption in the optically excited hot carrier system counteracting pure absorption bleaching of interband transitions. While interband transition bleaching is relevant in the first hundreds of fs after the excitation, intraband absorption sets in at later times. In particular, in the low excitation regime, these intraband absorption processes prevail over the absorption bleaching resulting in a zero-crossing of the differential transmission. Our findings are in good agreement with recent experimental pump-probe studies.

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preprint2014arXiv

Microscopic view on the ultrafast photoluminescence from photo-excited graphene

We present a joint theory-experiment study on ultrafast photoluminescence from photoexcited graphene. Based on a microscopic theory, we reveal two distinct mechanisms behind the occurring photoluminescence: Besides the well-known incoherent contribution driven by non-equilibrium carrier occupations, we found a coherent part that spectrally shifts with the excitation energy. In our experiments, we demonstrate for the first time the predicted appearance and spectral shift of the coherent photoluminescence.

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preprint2014arXiv

Stacking-dependent energetics and electronic structure of ultrathin polymorphic V$_2$VI$_3$ topological insulator nanofilms

Topological insulators represent a paradigm shift in surface physics. The most extensively studied Bi$_2$Se$_3$-type topological insulators exhibit layered structures, wherein neighboring layers are weakly bonded by van der Waals interactions. Using first principles density-functional theory calculations, we investigate the impact of the stacking sequence on the energetics and band structure properties of three polymorphs of Bi$_2$Se$_3$, Bi$_2$Te$_3$, and Sb$_2$Te$_3$. Considering their ultrathin films up to 6 nm as a function of its layer thickness, the overall dispersion of the band structure is found to be insensitive to the stacking sequence, while the band gap is highly sensitive, which may also affect the critical thickness for the onset of the topologically nontrivial phase. Our calculations are consistent with both experimental and theoretical results, where available. We further investigate tribological layer slippage, where we find a relatively low energy barrier between two of the considered structures. Both the stacking-dependent band gap and low slippage energy barriers, suggest that polymorphic stacking modification may offer an alternative route for controlling the properties of this new state of matter.

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preprint2013arXiv

Anisotropy of excitation and relaxation of photogenerated Dirac electrons in graphene

We investigate the polarization dependence of the carrier excitation and relaxation in epitaxial multilayer graphene. Degenerate pump-probe experiments with a temporal resolution of 30 fs are performed for different rotation angles of the pump-pulse polarization with respect to the polarization of the probe pulse. A pronounced dependence of the pump-induced transmission on this angle is found. It reflects a strong anisotropy of the pump-induced occupation of photogenerated carriers in momentum space even though the band structure is isotropic. Within 150 fs after excitation an isotropic carrier distribution is established. Our observations imply the predominant role of collinear scattering preserving the initially optically generated anisotropy in the carrier distribution. The experiments are well described by microscopic time-, momentum, and angle-resolved modelling, which allows us to unambiguously identify non-collinear carrier-phonon scattering to be the main relaxation mechanism giving rise to an isotropic distribution in the first hundred fs after optical excitation.

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preprint2012arXiv

Carrier dynamics in epitaxial graphene close to the Dirac point

We study the carrier dynamics in epitaxially grown graphene in the range of photon energies from 10 - 250 meV. The experiments complemented by microscopic modeling reveal that the carrier relaxation is significantly slowed down as the photon energy is tuned to values below the optical phonon frequency, however, owing to the presence of hot carriers, optical phonon emission is still the predominant relaxation process. For photon energies about twice the value of the Fermi energy, a transition from pump-induced transmission to pump-induced absorption occurs due to the interplay of interband and intraband processes.

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preprint2012arXiv

Impact of Auger processes on carrier dynamics in graphene

The linear, gapless bandstructure of graphene provides ideal conditions for Auger processes. They are of great importance for fundamental research and technological applications, since they qualitatively change the carrier dynamics. Time-, momentum-, and angle-resolved microscopic calculations reveal an efficient impact excitation giving rise to a significant multiplication of optically excited carriers and a remarkable Coulomb- induced carrier cooling effect. We present an analytic expression for the carrier multiplication predicting ideal conditions for its still missing experimental observation.

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preprint2012arXiv

Microscopic mechanism for transient population inversion and optical gain in graphene

A transient femtosecond population inversion in graphene was recently reported by Li et al., Phys. Rev. Lett. 108, 167401 (2012). Based on a microscopic theory we clarify the underlying microscopic mechanism: Transient gain and population inversion in graphene occurs due to a complex interplay of strong optical pumping and carrier cooling that fills states close to the Dirac point giving rise to a relaxation bottleneck. The subsequent femtosecond decay of the optical gain is mainly driven by Coulomb-induced Auger recombination.

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preprint2010arXiv

Carrier Multiplication in Graphene

Graphene as a zero-bandgap semiconductor is an ideal model structure to study the carrier relaxation channels, which are inefficient in conventional semiconductors. In particular, it is of fundamental interest to address the question whether Auger-type processes significantly influence the carrier dynamics in graphene. These scattering channels bridge the valence and conduction band allowing carrier multiplication - a process that generates multiple charge carriers from the absorption of a single photon. This has been suggested in literature for improving the efficiency of solar cells. Here we show, based on microscopic calculations within the density matrix formalism, that Auger processes do play an unusually strong role for the relaxation dynamics of photo-excited charge carriers in graphene. We predict that a considerable carrier multiplication takes place, suggesting graphene as a new material for high-efficiency solar cells and for high-sensitivity photodetectors.

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