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Researcher profile

Tongxu Yu

Tongxu Yu contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.supr-concond-mat.dis-nncond-mat.str-el

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Published work

3 published item(s)

preprint2023arXiv

Superconductivity in an Orbital-reoriented SnAs Square Lattice: a Case Study of Li0.6Sn2As2 and NaSnAs

Searching for functional square lattices in layered superconductor systems offers an explicit clue to modify the electron behavior and find exotic properties. The trigonal SnAs3 structural units in SnAs-based systems are relatively conformable to distortion, which provides the possibility to achieve structurally topological transformation and higher superconducting transition temperatures. In the present work, the functional As square lattice was realized and activated in Li0.6Sn2As2 and NaSnAs through a topotactic structural transformation of trigonal SnAs3 to square SnAs4 under pressure, resulting in a record-high Tc among all synthesized SnAs-based compounds. Meanwhile, the conductive channel transfers from the out-of-plane pz orbital to the in-plane px+py orbitals, facilitating electron hopping within the square 2D lattice and boosting the superconductivity. The reorientation of p-orbital following a directed local structure transformation provides an effective strategy to modify layered superconductors.

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preprint2022arXiv

Caging-Pnictogen-Induced Superconductivity in Skutterudites IrX3 (X = As, P)

Here we report on a new kind of compound, XδIr4X12-δ (X = P, As), the first hole-doped skutterudites superconductor. We provide atomic resolution images of the caging As atoms using scanning transmission electron microscopy (STEM). By inserting As atoms into the caged structure under a high pressure, superconductivity emerges with a maximum transition temperature (Tc) of 4.4 K (4.8 K) in IrAs3 (IrP3). In contrast to all of the electron-doped skutterudites, the electronic states around the Fermi level in XδIr4X12-δ are dominated by the caged X atom, which can be described by a simple body-centered tight-binding model, implying a distinct paring mechanism. Our density functional theory (DFT) calculations reveal an intimate relationship between the pressure-dependent local-phonon mode and the enhancement of Tc. The discovery of XδIr4X12-δ provides an arena to investigate the uncharted territory of hole-doped skutterudites, and the method proposed here represents a new strategy of carrier doping in caged structures, without introducing extra elements.

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preprint2022arXiv

High entropy van der Waals materials (Review article)

By breaking the restrictions on traditional alloying strategy, the high entropy concept has promoted the exploration of the central area of phase space, thus broadening the horizon of alloy exploitation. This review highlights the marriage of the high entropy concept and van der Waals systems to form a new family of materials category, namely the high entropy van der Waals materials (HEX, HE = high entropy, X= anion clusters) and describe the current issues and next challenges. The design strategy for HEX has integrated the local feature (e.g., composition, spin, and valence states) of structural units in high entropy materials and the holistic degrees of freedom (e.g., stacking, twisting, and intercalating species) in van der Waals materials, and has been successfully employed for the discovery of high entropy dichalcogenides, phosphorus tri-chalcogenides, halogens, and MXene. The rich combination and random distribution of the multiple metallic constituents on the nearly-regular 2D lattice give rise to a flexible platform to study the correlation features behind a range of selected physical properties, e.g., superconductivity, magnetism, and metal-insulator transition. The deliberate design of structural units and their stacking configuration can also create novel catalysts to enhance their performance in a bunch of chemical reactions.

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