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Tomohito Otobe

Tomohito Otobe appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-sciphysics.opticsphysics.app-phphysics.atom-ph

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Published work

8 published item(s)

preprint2022arXiv

Propagation effects in high-harmonic generation from dielectric thin films

Theoretical investigation is conducted of high-order harmonic generation (HHG) in silicon thin films to elucidate the effect of light propagation in reflected and transmitted waves. The first-principles simulations are performed of the process in which an intense pulsed light irradiates silicon thin films up to 3 $μ$m thickness. Our simulations are carried within the time-dependent density functional theory (TDDFT) with the account of coupled dynamics of the electromagnetic fields and the electronic motion. It was found that the intensity of transmission HHG gradually decreases with the thickness, while the reflection HHG becomes constant from a certain thickness. Detailed analyses show that transmission HHG have two origins: the HHG generated near the front edge and propagating to the back surface, and that generated near the back edge and emitted directly. The dominating mechanism of the transmission HHG is found to depend on the thickness of the thin film and the frequency of the HHG. At the film thickness of 1 $μ$m, the transmission HHG with the frequency below 20 eV is generated near the back edge, while that with the frequency above 20 eV is generated near the front edge and propagates from there to the back surface.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Three-temperature modeling of laser-induced damage process in silicon

Laser excitation in silicon from femto- to pico-second time scales is studied. We assume the Three-Temperature Model (3TM) which describes the dynamics of the distinct quasi-temperatures for electrons, holes, and lattice. Numerical results for damage threshold reproduce the experimental results not only quantitatively, but qualitatively as well, showing dependence on laser pulse duration. Comparison with experimental data suggests that electron emission and thermal melting are both responsible for damage in silicon. We found that electron-phonon relaxation time has a significant effect on pulse duration dependence of electron emission.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Wavelength dependence of laser-induced excitation dynamics in silicon

Effect of laser wavelength on the carrier-phonon dynamics and damage threshold of silicon is studied numerically. Laser excitation dynamics in silicon is studied using Three-Temperature Model (3TM). We consider the evolution of electron, hole, and lattice temperatures separately and including band-gap re-normalization effect on optical properties of silicon. Finite Difference Time Domain method is used to model the laser field. Damage threshold calculated using the 3TM is in reasonable agreement with the experiments. Our results indicate that the competition of inter-band excitation, plasma heating, and electron-phonon relaxation process defines the damage threshold for various wavelengths and pulse durations.

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preprint2021arXiv

Electron excitation rate in dielectrics under an intense elliptically polarized laser field

Electron excitation in dielectrics is studied for an elliptically polarized laser field. As the first step, we develop an analytical formula for electron excitation rate under elliptically polarized laser as the extension of our previous work [T.Otobe et. al., JPSJ88(2019) 024709]. In the next step, we calculate the excitation rate depending on the band structure by assuming direction dependence of reduced mass. We find that although the ellipticity decreases the excitation rate significantly in an isotropic system, the energy oscillation of electrons due to the intra-band dynamics in the anisotropic band structure increases the excitation rate with higher ellipticity. Our results indicate that we can control the excitation rate in dielectrics by varying the ellipticity, depending on the band anisotropy.

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preprint2021arXiv

Nonlinear dynamics of electromagnetic field and valley polarization in WSe$_{2}$ monolayer

Linear and nonlinear optical response of WSe$_{2}$ monolayer is investigated by two-dimensional Maxwell plus time-dependent density functional theory with spin-orbit interaction. By applying the chiral resonant pulses, the electron dynamics along with high harmonic generation are examined at weak and strong laser fields. WSe$_{2}$ monolayer shows the linear optical response at the intensity I = 10$^{10}$~W/cm$^{2}$ while a complex nonlinear behavior is observed at I = 10$^{12}$~W/cm$^{2}$. The nonlinear response of WSe$_{2}$ monolayer in terms of saturable absorption is observed at strong laser field. By changing the chirality of the resonant light, a strong circular dichroic effect is observed in the excited state population. A relatively weak laser field shows effective valley polarization while strong field induces spin-polarized carrier peak between $K$($K'$) and $\mathitΓ$-point via nonlinear process. On the other hand, the strong laser field shows high harmonics up to the 11th order. Our results demonstrate that circularly polarized resonant pulse generate high harmonics in WSe$_{2}$ monolayer of order 3n$\pm1$.

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preprint2021arXiv

Valley polarization control in WSe2 monolayer by a single-cycle laser pulse

Abstract The valley degree of freedom in two-dimensional materials provides an opportunity to extend the functionalities of valleytronics devices. Very short valley lifetimes demand the ultrafast control of valley pseudospin. Here, we theoretically demonstrate the control of valley pseudospin in WSe2 monolayer by single-cycle linearly polarized laser pulse. We use the asymmetric electric field controlled by the carrier-envelope phase (CEP) to make the valley polarization between K and K'-point in the Brillouin zone (BZ). Time-dependent density functional theory with spin-orbit interaction reveals that no valley asymmetry and its CEP dependence is observed within the linear-optical limit. In the nonlinear-optical regime, linearly polarized pulse induces a high degree of valley polarization and this polarization is robust against the field strength. Valley polarization strongly depends and oscillates as a function of CEP. The carrier density distribution forms nodes as the laser intensity increases, our results indicate that the position of the carrier density in the BZ can be controlled by the laser intensity. From the analysis by the massive Dirac Hamiltonian model, the nodes of the carrier density can be attributed to the Landau-Zener-Stückelberg interference of wave packets of the electron wave function.

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preprint2020arXiv

Strong-Field Electron Dynamics in Solids

Solid-state materials have recently emerged as a new stage of strong-field physics and attosecond science. The mechanism of the electron dynamics driven by an ultrashort intense laser pulse is under intensive discussion. Here we theoretically discuss momentum-space strong-field electron dynamics in graphene and crystalline dielectrics and semiconductors. First, within massless Dirac fermion and tight-binding models for graphene, we rigorously derive intraband displacement and interband transition, which form the basis for understanding solid-state strong-field physics including high-harmonic generation (HHG). Then, based on the time-dependent Schrödinger equation for a one-dimensional model crystal, we introduce a simple, multiband, momentum-space three-step model that incorporates intraband displacement, interband tunneling, and recombination with a valence band hole. We also analyze how the model is modified by electron-hole interaction. Finally, actual three-dimensional materials are investigated. We present a time-dependent density-matrix method whose results for HHG are compared with experimental measurement results. Moreover, we describe the dynamical Franz-Keldysh effect in femtosecond time resolution, i.e., the time-dependent modulation of a dielectric function under an intense laser field, using a real-time time-dependent density functional theory.

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preprint2013arXiv

First-principles simulation of the optical response of bulk and thin-film α-quartz irradiated with an ultrashort intense laser pulse

A computational method based on a first-principles multiscale simulation has been used for calculating the optical response and the ablation threshold of an optical material irradiated with an ultrashort intense laser pulse. The method employs Maxwell's equations to describe laser pulse propagation and time-dependent density functional theory to describe the generation of conduction band electrons in an optical medium. Optical properties, such as reflectance and absorption, were investigated for laser intensities in the range $10^{10} \, \mathrm{W/cm^{2}}$ to $2 \times 10^{15} \, \mathrm{W/cm^{2}}$ based on the theory of generation and spatial distribution of the conduction band electrons. The method was applied to investigate the changes in the optical reflectance of $α$-quartz bulk, half-wavelength thin-film and quarter-wavelength thin-film and to estimate their ablation thresholds. Despite the adiabatic local density approximation used in calculating the exchange--correlation potential, the reflectance and the ablation threshold obtained from our method agree well with the previous theoretical and experimental results. The method can be applied to estimate the ablation thresholds for optical materials in general. The ablation threshold data can be used to design ultra-broadband high-damage-threshold coating structures.

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