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Alberta Bonanni

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Published work

12 published item(s)

preprint2022arXiv

Effect of impurity scattering on percolation of bosonic islands and reentrant superconductivity in Fe implanted NbN thin films

A reentrant temperature dependence of the thermoresistivity $ρ_{\mathrm{xx}}(T)$ between an onset local superconducting ordering temperature $T_\mathrm{loc}^\mathrm{onset}$ and a global superconducting transition at $T=T_\mathrm{glo}^\mathrm{offset}$ has been reported in disordered conventional 3-dimensional (3D) superconductors. The disorder of these superconductors is a result of either an extrinsic granularity due to grain boundaries, or of an intrinsic granularity ascribable to the electronic disorder originating from impurity dopants. Here, the effects of Fe doping on the electronic properties of sputtered NbN layers with a nominal thickness of 100 nm are studied by means of low-$T$/high-$μ_{0}H$ magnetotransport measurements. The doping of NbN is achieved $via$ implantation of 35 keV Fe ions. In the as-grown NbN films, a local onset of superconductivity at $T_\mathrm{loc}^\mathrm{onset}=15.72\,\mathrm{K}$ is found, while the global superconducting ordering is achieved at $T_\mathrm{glo}^\mathrm{offset}=15.05\,\mathrm{K}$, with a normal state resistivity $ρ_{\mathrm{xx}}=22\,{μΩ}\cdot{\mathrm{cm}}$. Moreover, upon Fe doping of NbN, $ρ_{\mathrm{xx}}=40\,{μΩ}\cdot{\mathrm{cm}}$ is estimated, while $T_\mathrm{loc}^\mathrm{onset}$ and $T_\mathrm{glo}^\mathrm{offset}$ are measured to be 15.1 K and 13.5K, respectively. In Fe:NbN, the intrinsic granularity leads to the emergence of a bosonic insulator state and the normal-metal-to-superconductor transition is accompanied by six different electronic phases characterized by a $N$-shaped $T$ dependence of $ρ_{\mathrm{xx}}(T)$. The bosonic insulator state in a $s$-wave conventional superconductor doped with dilute paramagnetic impurities is predicted to represent a workbench for emergent phenomena, such as gapless superconductivity, triplet Cooper pairings and topological odd frequency superconductivity.

preprint2021arXiv

Cross-plane thermal conductivity of GaN/AlN superlattices

Heterostructures consisting of alternating GaN/AlN epitaxial layers represent the building-blocks of state-of-the-art devices employed for active cooling and energy-saving lightning. Insights into the heat conduction of these structures are essential in the perspective of improving the heat management for prospective applications. Here, the cross-plane (perpendicular to the sample's surface) thermal conductivity of GaN/AlN superlattices as a function of the layers' thickness is established by employing the $3ω$-method. Moreover, the role of interdiffusion at the interfaces on the phonon scattering is taken into account in the modelling and data treatment. It is found, that the cross-plane thermal conductivity of the epitaxial heterostructures can be driven to values as low as 5.9 W/(m$\cdot$K) comparable with those reported for amorphous films, thus opening wide perspectives for optimized heat management in III-nitride-based epitaxial multilayers.

preprint2020arXiv

Impact of Residual Carbon Impurities and Gallium Vacancies on Trapping Effects in AlGaN/GaN MIS-HEMTs

Effects of residual C impurities and Ga vacancies on the dynamic instabilities of AlN/AlGaN/GaN metal insulator semiconductor high electron mobility transistors are investigated. Secondary ion mass spectroscopy, positron annihilation spectroscopy, steady state and time-resolved photoluminescence (PL) measurements have been performed in conjunction with electrical characterization and current transient analyses. The correlation between yellow luminescence (YL), C- and Ga vacancy concentration is investigated. Time-resolved PL indicating the C$_{\mathrm{N}}$O$_{\mathrm{N}}$ complex as the main source of the YL, while Ga vacancies or related complexes with C seem not to play a major role. The device dynamic performance is found to be significantly dependent on the C concentration close to the channel of the transistor. Additionally, the magnitude of the YL is found to be in agreement with the threshold voltage shift and with the on-resistance degradation. Trap analysis of the GaN buffer shows an apparent activation energy of $\sim$0.8eV for all samples, pointing to a common dominating trapping process and that the growth parameters affect solely the density of trap centres. It is inferred that the trapping process is likely to be directly related to C based defects.

preprint2015arXiv

Incorporation of Mn in Al$_{x}$Ga$_{1-x}$N probed by x-ray absorption and emission spectroscopy, high-resolution microscopy, x-ray diffraction and first-principles calculations

Synchrotron radiation x-ray absorption and emission spectroscopy techniques, complemented by high-resolution transmission electron microscopy methods and density functional theory calculations are employed to investigate the effect of Mn in Al$_{x}$Ga$_{1-x}$N:Mn samples with an Al content up to 100%. The atomic and electronic structure of Mn is established together with its local environment and valence state. A dilute alloy without precipitation is obtained for Al$_{x}$Ga$_{1-x}$N:Mn with Al concentrations up to 82%, and the surfactant role of Mn in the epitaxial process is confirmed.

preprint2014arXiv

Mn as surfactant for the self-assembling of Al$_x$Ga$_{1-x}$N/GaN layered heterostructures

The structural analysis of GaN and Al$_x$Ga$_{1-x}$N/GaN heterostructures grown by metalorganic vapor phase epitaxy in the presence of Mn reveals how Mn affects the growth process, and in particular the incorporation of Al, the morphology of the surface, and the plastic relaxation of Al$_x$Ga$_{1-x}$N on GaN. Moreover, the doping with Mn promotes the formation of layered Al$_x$Ga$_{1-x}$N/GaN superlattice-like heterostructures opening wide perspective for controlling the segregation of ternary alloys during the crystal growth and for fostering the self-assembling of functional layered structures.

preprint2014arXiv

Planar array of self-assembled Ga$_{x}$Fe$_{4-x}$N nanocrystals in GaN: Magnetic anisotropy determined via ferromagnetic resonance

The magnetic anisotropy of a planar array of Ga$_{x}$Fe$_{4-x}$N nanocrystals (NCs) embedded in a GaN host is studied by ferromagnetic resonance. X-ray diffraction and transmission electron microscopy are employed to determine the phase and distribution of the nanocrystals. The magnetic anisotropy is found to be primarily uniaxial with the hard axis normal to the NCs plane and to have a comparably weak in-plane hexagonal symmetry. The origin of the magnetic anisotropy is discussed taking into consideration the morphology of the nanocrystals, the epitaxial relations, strain effects and magnetic coupling between the NCs.

preprint2013arXiv

Functional Mn--Mg$_k$ cation complexes in GaN featured by Raman spectroscopy

The evolution of the optical branch in the Raman spectra of (Ga,Mn)N:Mg epitaxial layers as a function of the Mn and Mg concentrations, reveals the interplay between the two dopants. We demonstrate that the various Mn-Mg-induced vibrational modes can be understood in the picture of functional Mn--Mg$_k$ complexes formed when substitutional Mn cations are bound to $k$ substitutional Mg through nitrogen atoms, the number of ligands $k$ being driven by the ratio between the Mg and the Mn concentrations.

preprint2013arXiv

Manipulating Mn--Mg$_k$ cation complexes to control the charge- and spin-state of Mn in GaN

Owing to the variety of possible charge and spin states and to the different ways of coupling to the environment, paramagnetic centres in wide band-gap semiconductors and insulators exhibit a strikingly rich spectrum of properties and functionalities, exploited in commercial light emitters and proposed for applications in quantum information. Here we demonstrate, by combining synchrotron techniques with magnetic, optical and \emph{ab initio} studies, that the codoping of GaN:Mn with Mg allows to control the Mn$^{n+}$ charge and spin state in the range $3\le n\le 5$ and $2\ge S\ge 1$. According to our results, this outstanding degree of tunability arises from the formation of hitherto concealed cation complexes Mn-Mg$_k$, where the number of ligands $k$ is pre-defined by fabrication conditions. The properties of these complexes allow to extend towards the infrared the already remarkable optical capabilities of nitrides, open to solotronics functionalities, and generally represent a fresh perspective for magnetic semiconductors.

preprint2012arXiv

GaMnN epitaxial films with high magnetization

We report on the fabrication of pseudomorphic wurtzite GaMnN grown on GaN with Mn concentrations up to 10% using molecular beam epitaxy. According to Rutherford backscattering the Mn ions are mainly at the Ga-substitutional positions, and they are homogeneously distributed according to depth-resolved Auger-electron spectroscopy and secondary-ion mass-spectroscopy measurements. A random Mn distribution is indicated by transmission electron microscopy, no Mn-rich clusters are present for optimized growth conditions. A linear increase of the c-lattice parameter with increasing Mn concentration is found using x-ray diffraction. The ferromagnetic behavior is confirmed by superconducting quantum-interference measurements showing saturation magnetizations of up to 150 emu/cm^3.

preprint2011arXiv

A story of high-temperature ferromagnetism in semiconductors

The comprehensive search for multifunctional materials has resulted in the discovery of semiconductors and oxides showing ferromagnetic features persisting to room temperature. In this tutorial review the methods of synthesis of these materials, as well as the application of element-specific nano-analytic tools, particularly involving synchrotron radiation and electron microscopy, are described and shown to reveal the presence of nano-scale phase separations. Various means to control the aggregation of magnetic cations are discussed together with the mechanisms accounting for ferromagnetism of either condensed or diluted magnetic semiconductors. Finally, the question of whether high temperature ferromagnetism is possible in semiconductors not containing magnetic ions is touched upon.

preprint2011arXiv

Structural and paramagnetic properties of dilute Ga1-xMnxN

Systematic investigations of the structural and magnetic properties of single crystal (Ga,Mn)N films grown by metal organic vapor phase epitaxy are presented. High resolution transmission electron microscopy, synchrotron x-ray diffraction, and extended x-ray absorption fine structure studies do not reveal any crystallographic phase separation and indicate that Mn occupies Ga-substitutional sites in the Mn concentration range up to 1%. The magnetic properties as a function of temperature, magnetic field and its orientation with respect to the c-axis of the wurtzite structure can be quantitatively described by the paramagnetic theory of an ensemble of non-interacting Mn$^{3+}$ ions in the relevant crystal field, a conclusion consistent with the x-ray absorption near edge structure analysis. A negligible contribution of Mn in the 2+ charge state points to a low concentration of residual donors in the studied films. Studies on modulation doped p-type (Ga,Mn)N/(Ga,Al)N:Mg heterostructures do not reproduce the high temperature robust ferromagnetism reported recently for this system.

preprint2009arXiv

Local structure of (Ga,Fe)N and (Ga,Fe)N:Si investigated by x-ray absorption fine structure spectroscopy

X-ray absorption fine-structure (XAFS) measurements supported by {\em ab initio} computations within the density functional theory (DFT) are employed to systematically characterize Fe-doped as well as Fe and Si-co-doped films grown by metalorganic vapour phase epitaxy. The analysis of extended-XAFS data shows that depending on the growth conditions, Fe atoms either occupy Ga substitutional sites in GaN or precipitate in the form of $ε$-Fe$_3$N nanocrystals, which are ferromagnetic and metallic according to the DFT results. Precipitation can be hampered by reducing the Fe content, or by increasing the growth rate or by co-doping with Si. The near-edge region of the XAFS spectra provides information on the Fe charge state and shows its partial reduction from Fe$^{+3}$ to Fe$^{+2}$ upon Si co-doping, in agreement with the Fe electronic configurations expected within various implementations of DFT.