Researcher profile

Tokuyuki Teraji

Tokuyuki Teraji contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 21 - EmergingVerification L1Unclaimed author
6works
0followers
4topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

6 published item(s)

preprint2026arXiv

Direct imaging of stress tensor around single dislocation in diamond

Dislocations are fundamental crystal defects whose stress fields govern a wide range of material properties. The analytical form of the stress tensor around single dislocation was established by elasticity theory more than 80 years ago and has provided a theoretical basis for evaluating essential characteristics of dislocations. However, direct experimental verification has long remained out of reach because it has been difficult to measure the components of the stress tensor with conventional methods. Here, we present the experimental visualization of the stress tensor around single dislocation in diamond. Using quantum sensors based on nitrogen-vacancy (NV) centers, we mapped the shear components ($σ_{xy}$, $σ_{yz}$, $σ_{zx}$) together with the trace of the stress tensor ($σ_{xx}+σ_{yy}+σ_{zz}$) around single 45° dislocation. The observed distributions exhibited good agreement with predictions from elasticity theory, thus providing experimental validation of this theoretical framework.

preprint2020arXiv

Spin coherence and depths of single nitrogen-vacancy centers created by ion implantation into diamond via screening masks

We characterize single nitrogen-vacancy (NV) centers created by 10-keV N+ ion implantation into diamond via thin SiO$_2$ layers working as screening masks. Despite the relatively high acceleration energy compared with standard ones (< 5 keV) used to create near-surface NV centers, the screening masks modify the distribution of N$^+$ ions to be peaked at the diamond surface [Ito et al., Appl. Phys. Lett. 110, 213105 (2017)]. We examine the relation between coherence times of the NV electronic spins and their depths, demonstrating that a large portion of NV centers are located within 10 nm from the surface, consistent with Monte Carlo simulations. The effect of the surface on the NV spin coherence time is evaluated through noise spectroscopy, surface topography, and X-ray photoelectron spectroscopy.

preprint2014arXiv

All-optical initialization, readout, and coherent preparation of single silicon-vacancy spins in diamond

The silicon-vacancy ($\mathrm{SiV}^-$) color center in diamond has attracted attention due to its unique optical properties. It exhibits spectral stability and indistinguishability that facilitate efficient generation of photons capable of demonstrating quantum interference. Here we show high fidelity optical initialization and readout of electronic spin in a single $\mathrm{SiV}^-$ center with a spin relaxation time of $T_1=2.4\pm0.2$ ms. Coherent population trapping (CPT) is used to demonstrate coherent preparation of dark superposition states with a spin coherence time of $T_2^\star=35\pm3$ ns. This is fundamentally limited by orbital relaxation, and an understanding of this process opens the way to extend coherences by engineering interactions with phonons. These results establish the $\mathrm{SiV}^-$ center as a solid-state spin-photon interface.

preprint2014arXiv

Electronic structure of the negatively-charged silicon-vacancy center in diamond

The negatively-charged silicon-vacancy (SiV$^-$) center in diamond is a promising single photon source for quantum communications and information processing. However, the center&#39;s implementation in such quantum technologies is hindered by contention surrounding its fundamental properties. Here we present optical polarization measurements of single centers in bulk diamond that resolve this state of contention and establish that the center has a $\langle111\rangle$ aligned split-vacancy structure with $D_{3d}$ symmetry. Furthermore, we identify an additional electronic level and evidence for the presence of dynamic Jahn-Teller effects in the center&#39;s 738 nm optical resonance.

preprint2014arXiv

Isotopically varying spectral features of silicon vacancy in diamond

The silicon-vacancy centre (SiV) in diamond has interesting vibronic features. We demonstrate that the zero phonon line position can be used to reliably identify the silicon isotope present in a single centre. This is of interest for quantum information applications since only the silicon 29 isotope has nuclear spin. In addition, we demonstrate that the 64 meV line is due to a local vibrational mode of the silicon atom. The presence of a local mode suggests a plausible origin of the isotopic shift of the zero phonon line.

preprint2013arXiv

Strongly Coupled Diamond Spin Qubits by Molecular Nitrogen Implantation

Ionized nitrogen molecules ($^{15}$N$_{2}^+$) are used as efficient point sources for creating NV$^-$ pairs in diamond with nanoscale spatial separation and up to 55 kHz magnetic coupling strength. Co-implantation of $^{12}$C$^+$ increased the yield of pairs, and a $^{13}$C-depleted diamond allowed 0.65 ms coherence times to be obtained. Further coupling to a third dark spin provided a strongly coupled three spin register. These results mark an important step towards realization of multi-qubit systems and scalable NV$^-$ quantum registers.