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Lachlan J. Rogers

Lachlan J. Rogers appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-sciquant-phphysics.opticscond-mat.mes-hallphysics.app-ph

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Published work

13 published item(s)

preprint2022arXiv

Structural and optical properties of micro-diamonds with SiV- color centers

Isolated, micro-meter sized diamonds are grown by micro-wave plasma chemical vapour deposition technique on Si(001) substrates. Each diamond is uniquely identified by markers milled in the Si substrate by Ga+ focused ion beam. The morphology and micrograin structure analysis indicates that the diamonds are icosahedral or bi-crystals. Icosahedral diamonds have higher (up to $σ_\mathrm{h}$ = 2.3 GPa), and wider distribution ($Δσ_\mathrm{h}$ = 4.47 GPa) of hydrostatic stress built up at the microcrystal grain boundaries, compared to the other crystals. The number and spectral shape of SiV- color centers incorporated in the micro-diamonds is analysed, and estimated by means of temperature dependent photoluminescence measurements, and Montecarlo simulations. The Montecarlo simulations indicate that the number of SiV- color centers is a few thousand per micro-diamond.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Absorptive laser threshold magnetometry: combining visible diamond Raman lasers and nitrogen-vacancy centres

We propose a high-sensitivity magnetometry scheme based on a diamond Raman laser with visible pump absorption by an ensemble of coherently microwave driven negatively charged nitrogen-vacancy centres (NV) in the same diamond crystal. The NV centres' absorption and emission are spin-dependent. We show how the varying absorption of the NV centres changes the Raman laser output. A shift in the diamond Raman laser threshold and output occurs with the external magnetic-field and microwave driving. We develop a theoretical framework including steady-state solutions to describe the effects of coherently driven NV centres in a diamond Raman laser. We discuss that such a laser working at the threshold can be employed for magnetic-field sensing. In contrast to previous studies on NV magnetometry with visible laser absorption, the laser threshold magnetometry method is expected to have low technical noise, due to low background light in the measurement signal. For magnetic-field sensing, we project a shot-noise limited DC sensitivity of a few $\mathrm{pT}/\sqrt{\mathrm{Hz}}$ in a well-calibrated cavity with realistic parameters. This sensor employs the broad visible absorption of NV centres and unlike previous laser threshold magnetometry proposals it does not rely on active NV centre lasing or an infrared laser medium at the specific wavelength of the NV centre's infrared absorption line.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Amplification by stimulated emission of nitrogen vacancy centres in a diamond-loaded fibre cavity

Laser-threshold magetometry using the negatively charged nitrogen-vacancy (NV-) centre in diamond as a gain medium has been proposed as a technique to dramatically enhance the sensitivity of room-temperature magnetometry. We experimentally explore a diamond-loaded open tunable fibre-cavity system as a potential contender for the realization of lasing with NV- centres. We observe amplification of the transmission of a cavity-resonant seed laser at 721 nm when the cavity is pumped at 532 nm, and attribute this to stimulated emission. Changes in the intensity of spontaneously emitted photons accompany the amplification, and a qualitative model including stimulated emission and ionisation dynamics of the NV- centre captures the dynamics in the experiment very well. These results highlight important considerations in the realization of an NV- laser in diamond.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Nanodiamonds carrying quantum emitters with almost lifetime-limited linewidths

Nanodiamonds (NDs) hosting optically active defects are an important technical material for applications in quantum sensing, biological imaging, and quantum optics. The negatively charged silicon vacancy (SiV) defect is known to fluoresce in molecular sized NDs (1 to 6 nm) and its spectral properties depend on the quality of the surrounding host lattice. This defect is therefore a good probe to investigate the material properties of small NDs. Here we report unprecedented narrow optical transitions for SiV colour centers hosted in nanodiamonds produced using a novel high-pressure high-temperature (HPHT) technique. The SiV zero-phonon lines were measured to have an inhomogeneous distribution of 1.05 nm at 5 K across a sample of numerous NDs. Individual spectral lines as narrow as 354 MHz were measured for SiV centres in nanodiamonds smaller than 200 nm, which is four times narrower than the best SiV line previously reported for nanodiamonds. Correcting for apparent spectral diffusion yielded a homogeneous linewith of about 200 MHz, which is close to the width limit imposed by the radiative lifetime. These results demonstrate that the direct HPHT synthesis technique is capable of producing nanodiamonds with high crystal lattice quality, which are therefore a valuable technical material.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

A Germanium-Vacancy Single Photon Source in Diamond

Color centers in diamond are widely recognized as a promising solid state platform for quantum cryptography and quantum information processing. For these applications, single photon sources with a high intensity and reproducible fabrication methods are required. Here, we report a novel color center in diamond, composed of a germanium (Ge) and a vacancy (V) and named the GeV center, which has a sharp and strong photoluminescence band with a zero-phonon line at 602 nm at room temperature. We demonstrate this new color center works as a single photon source. Both ion implantation and chemical vapor deposition techniques enabled fabrication of GeV centers in diamond. A first-principles calculation revealed the atomic crystal structure and energy levels of the GeV center.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

All-optical initialization, readout, and coherent preparation of single silicon-vacancy spins in diamond

The silicon-vacancy ($\mathrm{SiV}^-$) color center in diamond has attracted attention due to its unique optical properties. It exhibits spectral stability and indistinguishability that facilitate efficient generation of photons capable of demonstrating quantum interference. Here we show high fidelity optical initialization and readout of electronic spin in a single $\mathrm{SiV}^-$ center with a spin relaxation time of $T_1=2.4\pm0.2$ ms. Coherent population trapping (CPT) is used to demonstrate coherent preparation of dark superposition states with a spin coherence time of $T_2^\star=35\pm3$ ns. This is fundamentally limited by orbital relaxation, and an understanding of this process opens the way to extend coherences by engineering interactions with phonons. These results establish the $\mathrm{SiV}^-$ center as a solid-state spin-photon interface.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Electron-phonon processes of the silicon-vacancy centre in diamond

We investigate phonon induced electronic dynamics in the ground and excited states of the negatively charged silicon-vacancy ($\mathrm{SiV}^-$) centre in diamond. Optical transition line widths, transition wavelength and excited state lifetimes are measured for the temperature range 4-350 K. The ground state orbital relaxation rates are measured using time-resolved fluorescence techniques. A microscopic model of the thermal broadening in the excited and ground states of the $\mathrm{SiV}^-$ centre is developed. A vibronic process involving single-phonon transitions is found to determine orbital relaxation rates for both the ground and the excited states at cryogenic temperatures. We discuss the implications of our findings for coherence of qubit states in the ground states and propose methods to extend coherence times of $\mathrm{SiV}^-$ qubits.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Electronic structure of the negatively-charged silicon-vacancy center in diamond

The negatively-charged silicon-vacancy (SiV$^-$) center in diamond is a promising single photon source for quantum communications and information processing. However, the center's implementation in such quantum technologies is hindered by contention surrounding its fundamental properties. Here we present optical polarization measurements of single centers in bulk diamond that resolve this state of contention and establish that the center has a $\langle111\rangle$ aligned split-vacancy structure with $D_{3d}$ symmetry. Furthermore, we identify an additional electronic level and evidence for the presence of dynamic Jahn-Teller effects in the center's 738 nm optical resonance.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Indistinguishable photons from separated silicon-vacancy centers in diamond

We demonstrate that silicon-vacancy (SiV) centers in diamond can be used to efficiently generate coherent optical photons with excellent spectral properties. We show that these features are due to the inversion symmetry associated with SiV centers, and demonstrate generation of indistinguishable single photons from separate emitters in a Hong-Ou-Mandel (HOM) interference experiment.Prospects for realizing efficient quantum network nodes using SiV centers are discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Isotopically varying spectral features of silicon vacancy in diamond

The silicon-vacancy centre (SiV) in diamond has interesting vibronic features. We demonstrate that the zero phonon line position can be used to reliably identify the silicon isotope present in a single centre. This is of interest for quantum information applications since only the silicon 29 isotope has nuclear spin. In addition, we demonstrate that the 64 meV line is due to a local vibrational mode of the silicon atom. The presence of a local mode suggests a plausible origin of the isotopic shift of the zero phonon line.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Multiple intrinsically identical single photon emitters in the solid-state

Emitters of indistinguishable single photons are crucial for the growing field of quantum technologies. To realize scalability and increase the complexity of quantum optics technologies, multiple independent yet identical single photon emitters are also required. However typical solid-state single photon sources are inherently dissimilar, necessitating the use of electrical feedback or optical cavities to improve spectral overlap between distinct emitters. Here, we demonstrate bright silicon-vacancy (SiV-) centres in low-strain bulk diamond which intrinsically show spectral overlap of up to 91% and near transform-limited excitation linewidths. Our results have impact upon the application of single photon sources for quantum optics and cryptography, and the production of next generation fluorophores for bio-imaging.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Singlet levels of the NV$^{-}$ centre in diamond

The characteristic transition of the NV- centre at 637 nm is between ${}^3\mathrm{A}_2$ and ${}^3\mathrm{E}$ triplet states. There are also intermediate ${}^1\mathrm{A}_1$ and ${}^1\mathrm{E}$ singlet states, and the infrared transition at 1042 nm between these singlets is studied here using uniaxial stress. The stress shift and splitting parameters are determined, and the physical interaction giving rise to the parameters is considered within the accepted electronic model of the centre. It is established that this interaction for the infrared transition is due to a modification of electron-electron Coulomb repulsion interaction. This is in contrast to the visible 637 nm transition where shifts and splittings arise from modification to the one-electron Coulomb interaction. It is also established that a dynamic Jahn-Teller interaction is associated with the singlet ${}^1\mathrm{E}$ state, which gives rise to a vibronic level 115 $\mathrm{cm}^{-1}$ above the ${}^1\mathrm{E}$ electronic state. Arguments associated with this level are used to provide experimental confirmation that the ${}^1\mathrm{A}_1$ is the upper singlet level and ${}^1\mathrm{E}$ is the lower singlet level.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Observation of the dynamic Jahn-Teller effect in the excited states of nitrogen-vacancy centers in diamond

The optical transition linewidth and emission polarization of single nitrogen-vacancy (NV) centers are measured from 5 K to room temperature. Inter-excited state population relaxation is shown to broaden the zero-phonon line and both the relaxation and linewidth are found to follow a T^5 dependence for T up to 100 K. This dependence indicates that the dynamic Jahn-Teller effect is the dominant dephasing mechanism for the NV optical transitions at low temperatures.

0 citations0 reviewsNo code linkedOpen access