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Researcher profile

Tobias Korn

Tobias Korn contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

4 published item(s)

preprint2021arXiv

Interlayer exciton valley polarization dynamics in large magnetic fields

In van der Waals heterostructures (HS) consisting of stacked MoSe$_2$ and WSe$_2$ monolayers, optically bright interlayer excitons (ILE) can be observed when the constituent layers are crystallographically aligned. The symmetry of the monolayers allows for two different types of alignment, in which the momentum-direct interlayer transitions are either valley-conserving (R-type alignment) or changing the valley index (H-type anti-alignment). Here, we study the valley polarization dynamics of ILE in magnetic fields up to 30~Tesla by time-resolved photoluminescence (PL). For all ILE types, we find a finite initial PL circular degree of polarization ($DoP$) after unpolarized excitation in applied magnetic fields. For ILE in H-type HS, we observe a systematic increase of the PL $DoP$ with time in applied magnetic fields, which saturates at values close to unity for the largest fields. By contrast, for ILE in R-type HS, the PL $DoP$ shows a decrease and a zero crossing before saturating with opposite polarization. This unintuitive behavior can be explained by a model considering the different ILE states in H- and R-type HS and their selection rules coupling PL helicity and valley polarization.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Low-frequency Raman scattering in WSe$_2$-MoSe$_2$ heterobilayers: Evidence for atomic reconstruction

We investigate WSe$_2$-MoSe$_2$ heterobilayers with different twist angles $θ\pm δ$ between the two layers, by low-frequency Raman scattering. In sufficiently aligned samples with $θ=0^\circ$, or $θ=60^\circ$, and $δ\lesssim 3^\circ$, we observe an interlayer shear mode (ISM), which is a clear sign of a commensurate bilayer structure, i.e., the layers must undergo an atomic reconstruction to form R-type or H-type stacking orders. We find slightly different ISM energies of about 18~cm$^{-1}$ and 17~cm$^{-1}$ for H-type and R-type reconstructions, respectively, independent of the exact value of $θ\pm δ$. Our findings are corroborated by the fact that the ISM is not observed in samples with twist angles, which deviate by $δ> 3^\circ$ from $0^\circ$ or $60^\circ$. This is expected, since in such incommensurate structures, with the possibility of Moir$\acute{\text{e}}$-lattice formation, there is no restoring force for an ISM. Furthermore, we observe the ISM even in sufficiently aligned heterobilayers, which are encapsulated in hexagonal Boron nitride. This is particularly relevant for the characterization of high-quality heterostructure devices.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Air tightness of hBN encapsulation and its impact on Raman spectroscopy of van der Waals materials

Raman spectroscopy is a precious tool for the characterization of van der Waals materials, e.g. for the determination of the layer number in thin exfoliated flakes. For sensitive materials, however, this method can be dramatically invasive. In particular, the light intensity required to obtain a significant Raman signal is sufficient to immediately photo-oxidize few-layer thick metallic van der Waals materials. In this work we investigated the impact of the environment on Raman characterization of thin NbSe$_2$ crystals. We show that in ambient conditions the flake is locally oxidized even for very low illumination intensity. On the other hand, we observe no degradation if the Raman measurements are performed either in vacuum or on fully hBN-encapsulated samples. Interestingly, we find that covering samples deposited on the usual SiO$_2$ surface only from the top is not sufficient to prevent diffusion of oxygen underneath the layers.

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preprint2013arXiv

Weak localization and Raman study of anisotropically etched graphene antidots

We study a crystallographic etching process of graphene nanostructures where zigzag edges can be prepared selectively. The process involves heating exfoliated single-layer graphene samples with a predefined pattern of antidot arrays in an argon atmosphere at 820 C, which selectively removes carbon atoms located on armchair sites. Atomic force microscopy and scanning electron microscopy cannot resolve the structure on the atomic scale. However, weak localization and Raman measurements - which both probe intervalley scattering at armchair edges - indicate that zigzag regions are enhanced compared to samples prepared with oxygen based reactive ion etching only.

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