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Johannes Holler

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cond-mat.mes-hallcond-mat.mtrl-sci

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3 publications

preprint2021arXiv

Interlayer exciton valley polarization dynamics in large magnetic fields

In van der Waals heterostructures (HS) consisting of stacked MoSe2_2 and WSe2_2 monolayers, optically bright interlayer excitons (ILE) can be observed when the constituent layers are crystallographically aligned. The symmetry of the monolayers allows for two different types of alignment, in which the momentum-direct interlayer transitions are either valley-conserving (R-type alignment) or changing the valley index (H-type anti-alignment). Here, we study the valley polarization dynamics of ILE in magnetic fields up to 30~Tesla by time-resolved photoluminescence (PL). For all ILE types, we find a finite initial PL circular degree of polarization (DoPDoP) after unpolarized excitation in applied magnetic fields. For ILE in H-type HS, we observe a systematic increase of the PL DoPDoP with time in applied magnetic fields, which saturates at values close to unity for the largest fields. By contrast, for ILE in R-type HS, the PL DoPDoP shows a decrease and a zero crossing before saturating with opposite polarization. This unintuitive behavior can be explained by a model considering the different ILE states in H- and R-type HS and their selection rules coupling PL helicity and valley polarization.

Open access
preprint2020arXiv

Low-frequency Raman scattering in WSe2_2-MoSe2_2 heterobilayers: Evidence for atomic reconstruction

We investigate WSe2_2-MoSe2_2 heterobilayers with different twist angles θ±δθ\pm δ between the two layers, by low-frequency Raman scattering. In sufficiently aligned samples with θ=0∘θ=0^\circ, or θ=60∘θ=60^\circ, and δ≲3∘δ\lesssim 3^\circ, we observe an interlayer shear mode (ISM), which is a clear sign of a commensurate bilayer structure, i.e., the layers must undergo an atomic reconstruction to form R-type or H-type stacking orders. We find slightly different ISM energies of about 18~cm−1^{-1} and 17~cm−1^{-1} for H-type and R-type reconstructions, respectively, independent of the exact value of θ±δθ\pm δ. Our findings are corroborated by the fact that the ISM is not observed in samples with twist angles, which deviate by δ>3∘δ> 3^\circ from 0∘0^\circ or 60∘60^\circ. This is expected, since in such incommensurate structures, with the possibility of Moireˊ\acute{\text{e}}-lattice formation, there is no restoring force for an ISM. Furthermore, we observe the ISM even in sufficiently aligned heterobilayers, which are encapsulated in hexagonal Boron nitride. This is particularly relevant for the characterization of high-quality heterostructure devices.

Open access
preprint2019arXiv

Air tightness of hBN encapsulation and its impact on Raman spectroscopy of van der Waals materials

Raman spectroscopy is a precious tool for the characterization of van der Waals materials, e.g. for the determination of the layer number in thin exfoliated flakes. For sensitive materials, however, this method can be dramatically invasive. In particular, the light intensity required to obtain a significant Raman signal is sufficient to immediately photo-oxidize few-layer thick metallic van der Waals materials. In this work we investigated the impact of the environment on Raman characterization of thin NbSe2_2 crystals. We show that in ambient conditions the flake is locally oxidized even for very low illumination intensity. On the other hand, we observe no degradation if the Raman measurements are performed either in vacuum or on fully hBN-encapsulated samples. Interestingly, we find that covering samples deposited on the usual SiO2_2 surface only from the top is not sufficient to prevent diffusion of oxygen underneath the layers.

Open access

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