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Philipp Nagler

Philipp Nagler appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

5 published item(s)

preprint2021arXiv

Interlayer exciton valley polarization dynamics in large magnetic fields

In van der Waals heterostructures (HS) consisting of stacked MoSe$_2$ and WSe$_2$ monolayers, optically bright interlayer excitons (ILE) can be observed when the constituent layers are crystallographically aligned. The symmetry of the monolayers allows for two different types of alignment, in which the momentum-direct interlayer transitions are either valley-conserving (R-type alignment) or changing the valley index (H-type anti-alignment). Here, we study the valley polarization dynamics of ILE in magnetic fields up to 30~Tesla by time-resolved photoluminescence (PL). For all ILE types, we find a finite initial PL circular degree of polarization ($DoP$) after unpolarized excitation in applied magnetic fields. For ILE in H-type HS, we observe a systematic increase of the PL $DoP$ with time in applied magnetic fields, which saturates at values close to unity for the largest fields. By contrast, for ILE in R-type HS, the PL $DoP$ shows a decrease and a zero crossing before saturating with opposite polarization. This unintuitive behavior can be explained by a model considering the different ILE states in H- and R-type HS and their selection rules coupling PL helicity and valley polarization.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Low-frequency Raman scattering in WSe$_2$-MoSe$_2$ heterobilayers: Evidence for atomic reconstruction

We investigate WSe$_2$-MoSe$_2$ heterobilayers with different twist angles $θ\pm δ$ between the two layers, by low-frequency Raman scattering. In sufficiently aligned samples with $θ=0^\circ$, or $θ=60^\circ$, and $δ\lesssim 3^\circ$, we observe an interlayer shear mode (ISM), which is a clear sign of a commensurate bilayer structure, i.e., the layers must undergo an atomic reconstruction to form R-type or H-type stacking orders. We find slightly different ISM energies of about 18~cm$^{-1}$ and 17~cm$^{-1}$ for H-type and R-type reconstructions, respectively, independent of the exact value of $θ\pm δ$. Our findings are corroborated by the fact that the ISM is not observed in samples with twist angles, which deviate by $δ> 3^\circ$ from $0^\circ$ or $60^\circ$. This is expected, since in such incommensurate structures, with the possibility of Moir$\acute{\text{e}}$-lattice formation, there is no restoring force for an ISM. Furthermore, we observe the ISM even in sufficiently aligned heterobilayers, which are encapsulated in hexagonal Boron nitride. This is particularly relevant for the characterization of high-quality heterostructure devices.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Coherent and Incoherent Coupling Dynamics between Neutral and Charged Excitons in Monolayer MoSe2

The optical properties of semiconducting transition metal dichalcogenides are dominated by both neutral excitons (electron-hole pairs) and charged excitons (trions) that are stable even at room temperature. While trions directly influence charge transport properties in optoelectronic devices, excitons may be relevant through exciton-trion coupling and conversion phenomena. In this work, we reveal the coherent and incoherent nature of exciton-trion coupling and the relevant timescales in monolayer MoSe2 using optical two-dimensional coherent spectroscopy. Coherent interaction between excitons and trions is definitively identified as quantum beating of cross-coupling peaks that persists for a few hundred femtoseconds. For longer times up to 10 ps, surprisingly, the relative intensity of the cross-coupling peaks increases, which is attributed to incoherent energy transfer likely due to phonon-assisted up-conversion and down-conversion processes that are efficient even at cryogenic temperature.

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preprint2015arXiv

Identification of excitons, trions and biexcitons in single-layer WS2

Single-layer WS$_2$ is a direct-gap semiconductor showing strong excitonic photoluminescence features in the visible spectral range. Here, we present temperature-dependent photoluminescence measurements on mechanically exfoliated single-layer WS$_2$, revealing the existence of neutral and charged excitons at low temperatures as well as at room temperature. By applying a gate voltage, we can electrically control the ratio of excitons and trions and assert a residual n-type doping of our samples. At high excitation densities and low temperatures, an additional peak at energies below the trion dominates the photoluminescence, which we identify as biexciton emission.

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preprint2015arXiv

Observation of anisotropic interlayer Raman modes in few-layer ReS2

ReS$_2$ has recently emerged as a new member in the rapidly growing family of two-dimensional materials. Unlike MoS$_2$ or WSe$_2$, the optical and electrical properties of ReS$_2$ are not isotropic due to the reduced symmetry of the crystal. Here, we present layer-dependent Raman measurements of ReS$_2$ samples ranging from monolayers to ten layers in the ultralow frequency regime. We observe layer breathing and shear modes which allow for easy assignment of the number of layers. Polarization-dependent measurements give further insight into the crystal structure and reveal an energetic shift of the shear mode which stems from the in-plane anisotropy of the shear modulus in this material.

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