Researcher profile

Tingbiao Guo

Tingbiao Guo contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 13 - UnverifiedVerification L1Unclaimed author
2works
0followers
2topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

2 published item(s)

preprint2020arXiv

Enhancing single photon emission through quasi-bound states in the continuum of monolithic hexagonal boron nitride metasurface

A patterned structure of monolithic hexagonal boron nitride (hBN) on a glass substrate, which can enhance the emission of the embedded single photon emitters (SPEs), is useful for onchip single-photon sources of high-quality. Here, we design and demonstrate a monolithic hBN metasurface with quasi-bound states in the continuum mode at emission wavelength with ultrahigh Q values to enhance fluorescence emission of SPEs in hBN. Because of ultrahigh electric field enhancement inside the proposed hBN metasurface, an ultrahigh Purcell factor (3.3*10^4) is achieved. In addition, the Purcell factor can also be strongly enhanced in most part of the hBN structure, which makes the hBN metasurface suitable for e.g. monolithic quantum photonics.

preprint2020arXiv

High-Temperature Ultra-Broad UV-MIR High-Efficiency Absorber Based on Double Ring-Shaped Titanium Nitride Resonators

An ultrabroad absorber based on double-ring-shaped titanium nitride (TiN) nanoresonators, which can work in high temperatures, is proposed and numerically studied. The absorber with some optimal parameters exhibits an averaged absorption of 94.6% in the range of 200 - 4000 nm (from ultraviolet to mid-infrared) and a band from 200 - 3518 nm having an absorption > 90%. We have demonstrated in detail the physical mechanisms of the ultra-broad absorption, including the dielectric lossy property of TiN material itself in shorter wavelengths and plasmonic resonances caused by the metallic property of TiN nano-resonators in longer wavelengths. In addition, the absorber shows polarization independent and wide-angle acceptance. Another absorber with double TiN nano-rings of different heights has flatter and higher absorption efficiency (more than 95% absorption) at 200-2860 nm waveband. These properties make the proposed absorbers based on TiN has great potentials in many applications, such as light trapping, photovoltaics, thermal emitters.