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Ting-Fung Chung

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Published work

4 published item(s)

preprint2024arXiv

Advancing Noise-Resilient Twist Angle Characterization in Bilayer Graphene through Raman Spectroscopy via GAN-CNN Modeling

In this study, we introduce an innovative methodology for robust twist angle identification in bilayer graphene using Raman spectroscopy, featuring the integration of generative adversarial network and convolutional neural network (GAN-CNN). Our proposed approach showcases remarkable resistance to noise interference, particularly in ultra-low Signal-to-Noise Ratio (SNR) conditions. We demonstrate the GAN-CNN model's robust learning capability, even when SNR reaches minimal levels. The model's exceptional noise resilience negates the necessity for preprocessing steps, facilitating accurate classification, and substantially reducing computational expenses. Empirical results reveal the model's prowess, achieving heightened accuracy in twist angle identification. Specifically, our GAN-CNN model achieves a test accuracy exceeding 99.9% and a recall accuracy of 99.9%, relying on an augmented dataset containing 4209 spectra. This work not only contributes to the evolution of noise-resistant spectral analysis methodologies but also provides crucial insights into the application of advanced deep learning techniques for bilayer graphene characterization through Raman spectroscopy. The findings presented herein have broader implications for enhancing the precision and efficiency of material characterization methodologies, laying the foundation for future advancements in the field.

preprint2016arXiv

Electrical spin injection into graphene from a topological insulator in a van der Waals heterostructure

All-electrical (magnetic-material-free) spin injection is one of the outstanding goals in spintronics. Topological insulators (TIs) have been recognized as a promising electrically controlled spin source thanks to the strong spin-orbit coupling and in particular, the spin-momentum locked topological surface states (TSS) supporting helically spin polarized currents. Many TI materials such as Bi-based chalcogenides are also layered 2D materials and can be incorporated into van der Waals (vdW) coupled heterostructures, opening the possibility of the utilization of TIs for electrical spin injection into other 2D materials. Here, we demonstrate electrical injection of helically spin-polarized current into graphene through a 3D TI in a mechanically stacked heterostructure between Bi2Te2Se (a TI) and chemical vapor deposition (CVD)-grown graphene, using the spin potentiometric measurement. When a dc current is flowing from the TI to graphene, we detect a striking step-like voltage change (spin signal) in both the TI and graphene using ferromagnetic (FM) probes. The sign of the spin signal can be reversed by reversing the direction of the dc bias current, and the corresponding amplitude of the spin signal increases linearly with the bias current, indicative of a current-induced helical spin polarization in both TI and graphene. In contrast, the graphene itself exhibits usual nonlocal spin valve signal when the spins are injected using an FM electrode. We discuss possible origins of the helical spin polarization injected into the graphene in our TI/graphene heterostructure that may include TSS as well as the spin-orbit coupled Rashba states. Our findings show electrical injection of a spin helical current into graphene through a TI and demonstrate TIs as potential spin sources for future spintronic devices wherein spin manipulation is achieved electrically.

preprint2015arXiv

Plasmon Resonance in Multilayer Graphene Nanoribbons

Plasmon resonance in nanopatterned single layer graphene nanoribbon (SL-GNR), double layer graphene nanoribbon (DL-GNR) and triple layer graphene nanoribbon (TL-GNR) structures is studied both experimentally and by numerical simulations. We use 'realistic' graphene samples in our experiments to identify the key bottle necks in both experiments and theoretical models. The existence of electrical tunable plasmons in such stacked multilayer GNRs was first experimentally verified by infrared microscopy. We find that the strength of the plasmonic resonance increases in DL-GNR when compared to SL-GNRs. However, we do not find a further such increase in TL-GNRs compared to DL-GNRs. We carried out systematic full wave simulations using finite element technique to validate and fit experimental results, and extract the carrier scattering rate as a fitting parameter. The numerical simulations show remarkable agreement with experiments for unpatterned SLG sheet, and a qualitative agreement for patterned graphene sheet. We believe that further improvements such as introducing a bandgap into the numerical model could lead to a better quantitative agreement of numerical simulations with experiments. We also note that such advanced modeling would first require better quality graphene samples and accurate measurements.

preprint2013arXiv

Observation of Low Energy Raman Modes in Twisted Bilayer Graphene

Two new Raman modes below 100 cm^-1 are observed in twisted bilayer graphene grown by chemical vapor deposition. The two modes are observed in a small range of twisting angle at which the intensity of the G Raman peak is strongly enhanced, indicating that these low energy modes and the G Raman mode share the same resonance enhancement mechanism, as a function of twisting angle. The 94 cm^-1 mode (measured with a 532 nm laser excitation) is assigned to the fundamental layer breathing vibration (ZO (prime) mode) mediated by the twisted bilayer graphene lattice, which lacks long-range translational symmetry. The dependence of this modes frequency and linewidth on the rotational angle can be explained by the double resonance Raman process which is different from the previously-identified Raman processes activated by twisted bilayer graphene superlattice. The dependence also reveals the strong impact of electronic-band overlaps of the two graphene layers. Another new mode at 52 cm^-1, not observed previously in the bilayer graphene system, is tentatively attributed to a torsion mode in which the bottom and top graphene layers rotate out-of-phase in the plane.