Researcher profile

Timo Kaufmann

Timo Kaufmann contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2025arXiv

ResponseRank: Data-Efficient Reward Modeling through Preference Strength Learning

Binary choices, as often used for reinforcement learning from human feedback (RLHF), convey only the direction of a preference. A person may choose apples over oranges and bananas over grapes, but which preference is stronger? Strength is crucial for decision-making under uncertainty and generalization of preference models, but hard to measure reliably. Metadata such as response times and inter-annotator agreement can serve as proxies for strength, but are often noisy and confounded. We propose ResponseRank to address the challenge of learning from noisy strength signals. Our method uses relative differences in proxy signals to rank responses to pairwise comparisons by their inferred preference strength. To control for systemic variation, we compare signals only locally within carefully constructed strata. This enables robust learning of utility differences consistent with strength-derived rankings while making minimal assumptions about the strength signal. Our contributions are threefold: (1) ResponseRank, a novel method that robustly learns preference strength by leveraging locally valid relative strength signals; (2) empirical evidence of improved sample efficiency and robustness across diverse tasks: synthetic preference learning (with simulated response times), language modeling (with annotator agreement), and RL control tasks (with simulated episode returns); and (3) the Pearson Distance Correlation (PDC), a novel metric that isolates cardinal utility learning from ordinal accuracy.

preprint2020arXiv

The performance limits of epigraphene Hall sensors

Epitaxial graphene on silicon carbide, or epigraphene, provides an excellent platform for Hall sensing devices in terms of both high electrical quality and scalability. However, the challenge in controlling its carrier density has thus far prevented systematic studies of epigraphene Hall sensor performance. In this work we investigate epigraphene Hall sensors where epigraphene is doped across the Dirac point using molecular doping. Depending on the carrier density, molecular-doped epigraphene Hall sensors reach room temperature sensitivities $S_V=0.23 V/VT$,$S_I=1440 V/AT$ and magnetic field detection limits down to $B_{MIN}=27$ $nT/\sqrt{Hz}$ at 20 kHz. Thermally stabilized devices demonstrate operation up to $T=150$ $^oC$ with $S_V=0.12 V/VT$, $S_I=300 V/AT$ and $B_{MIN}\approx 100$ $nT/\sqrt{Hz}$ at 20 kHz.