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Tieshan Yang

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Published work

2 published item(s)

preprint2020arXiv

BiOBr 2D materials for integrated nonlinear photonics devices

As a new group of advanced 2D layered materials, bismuth oxyhalides, i.e., BiOX (X = Cl, Br, I), have recently become of great interest. In this work, we characterize the third-order optical nonlinearities of BiOBr, an important member of the BiOX family. The nonlinear absorption and Kerr nonlinearity of BiOBr nanoflakes at both 800 nm and 1550 nm are characterized via the Z-Scan technique. Experimental results show that BiOBr nanoflakes exhibit a large nonlinear absorption coefficient = \b{eta} = 10-7 m/W as well as a large Kerr coefficient n2 = 10-14 m2/W. We also note that the n2 of BiOBr reverses sign from negative to positive as the wavelength is changed from 800 nm to 1550 nm. We further characterize the thickness-dependent nonlinear optical properties of BiOBr nanoflakes, finding that the magnitudes of \b{eta} and n2 increase with decreasing thickness of the BiOBr nanoflakes. Finally, we integrate BiOBr nanoflakes into silicon integrated waveguides and measure their insertion loss, with the extracted waveguide propagation loss showing good agreement with mode simulations based on ellipsometry measurements. These results confirm the strong potential of BiOBr as a promising nonlinear optical material for high-performance hybrid integrated photonic devices.

preprint2020arXiv

Large and negative Kerr nonlinearity in PdSe2 dichalcogenide 2D films

We report a large third order nonlinear optical response of palladium diselenide (PdSe2) films, a two dimensional (2D) noble metal dichalcogenide material. Both open aperture (OA) and closed aperture (CA) Z scan measurements are performed with a femtosecond pulsed laser at 800 nm to investigate the nonlinear absorption and nonlinear refraction, respectively. In the OA experiment, we observe optical limiting behaviour originating from large two photo absorption (TPA) in the PdSe2 film of beta = 3.26 x 10-8 m/W. In the CA experiment, we measure a peak-valley response corresponding to a large and negative Kerr nonlinearity of n2 = -1.33 x 10-15 m2/W, two orders of magnitude larger than bulk silicon. We also characterize the variation of n2 as a function of laser intensity, observing that n2 decreases in magnitude with incident laser intensity, becoming saturated at n2 = -9.96 x 10-16 m2/W at high intensities. These results verify the large third order nonlinear optical response of 2D PdSe2 as well as its strong potential for high performance nonlinear photonic devices.