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Researcher profile

Linnan Jia

Linnan Jia contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.opticsphysics.app-ph

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Published work

7 published item(s)

preprint2022arXiv

Enhanced spectral broadening via self-phase modulation with femtosecond optical pulses in silicon nanowires integrated with 2D graphene oxide films

We experimentally demonstrate enhanced spectral broadening of femtosecond optical pulses af-ter propagation through silicon-on-insulator (SOI) nanowire waveguides integrated with two-dimensional (2D) graphene oxide (GO) films. Owing to the strong mode overlap between the SOI nanowires and the GO films with a high Kerr nonlinearity, the self-phase modulation (SPM) process in the hybrid waveguides is significantly enhanced, resulting in greatly improved spectral broadening of the femtosecond optical pulses. A solution-based, transfer-free coating method is used to integrate GO films onto the SOI nanowires with precise control of the film thickness. Detailed SPM measurements using femtosecond optical pulses are carried out, achieving a broadening factor of up to ~4.3 for a device with 0.4-mm-long, 2 layers of GO. By fit-ting the experimental results with theory, we obtain an improvement in the waveguide nonlin-ear parameter by a factor of ~3.5 and the effective nonlinear figure of merit (FOM) by a factor of ~3.8, relative to the uncoated waveguide. Finally, we discuss the influence of GO film length on the spectral broadening and compare the nonlinear optical performance of different integrated waveguides coated with GO films. These results confirm the improved nonlinear optical per-formance for silicon devices integrated with 2D GO films.

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preprint2021arXiv

Graphene oxide films for ultra-flat optics and linear and nonlinear integrated photonic circuits

With superior optical properties, high flexibility in engineering its material properties, and strong capability for large-scale on-chip integration, graphene oxide (GO) is an attractive solution for on-chip integration of two-dimensional (2D) materials to implement functional integrated photonic devices capable of new features. Over the past decade, integrated GO photonics, representing an innovative merging of integrated photonic devices and thin GO films, has experienced significant development, leading to a surge in many applications covering almost every field of optical sciences. This paper reviews the recent advances in this emerging field, providing an overview of the optical properties of GO as well as methods for the on-chip integration of GO. The main achievements made in GO hybrid integrated photonic devices for diverse applications are summarized. The open challenges as well as the potential for future improvement are also discussed.

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preprint2021arXiv

Theoretical design study of FWM in silicon nitride waveguides with integrated graphene oxide films

We theoretically investigate and optimize four-wave mixing (FWM) in silicon nitride (SiN) waveguides integrated with two-dimensional (2D) layered graphene oxide (GO) films. Based on extensive previous measurements of the material parameters of the GO films, we perform detailed analysis for the influence of device parameters including waveguide geometry, GO film thickness, length, and coating position on the FWM conversion efficiency (CE) and conversion bandwidth (CB). The influence of dispersion and photo-thermal changes in the GO films is also discussed. Owing to the strong mode overlap between the SiN waveguides and the highly nonlinear GO films, FWM in the hybrid waveguides can be significantly enhanced. We obtain good agreement with previous experimental results and show that by optimizing the device parameters to balance the trade-off between Kerr nonlinearity and loss, the FWM CE can be improved by as much as ~20.7 dB and the FWM CB can be increased by ~4.4 folds, relative to the uncoated waveguides. These results highlight the significantly enhanced FWM performance that can be achieved in SiN waveguides by integrating 2D layered GO films.

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preprint2020arXiv

BiOBr 2D materials for integrated nonlinear photonics devices

As a new group of advanced 2D layered materials, bismuth oxyhalides, i.e., BiOX (X = Cl, Br, I), have recently become of great interest. In this work, we characterize the third-order optical nonlinearities of BiOBr, an important member of the BiOX family. The nonlinear absorption and Kerr nonlinearity of BiOBr nanoflakes at both 800 nm and 1550 nm are characterized via the Z-Scan technique. Experimental results show that BiOBr nanoflakes exhibit a large nonlinear absorption coefficient = \b{eta} = 10-7 m/W as well as a large Kerr coefficient n2 = 10-14 m2/W. We also note that the n2 of BiOBr reverses sign from negative to positive as the wavelength is changed from 800 nm to 1550 nm. We further characterize the thickness-dependent nonlinear optical properties of BiOBr nanoflakes, finding that the magnitudes of \b{eta} and n2 increase with decreasing thickness of the BiOBr nanoflakes. Finally, we integrate BiOBr nanoflakes into silicon integrated waveguides and measure their insertion loss, with the extracted waveguide propagation loss showing good agreement with mode simulations based on ellipsometry measurements. These results confirm the strong potential of BiOBr as a promising nonlinear optical material for high-performance hybrid integrated photonic devices.

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preprint2020arXiv

Enhanced four-wave-mixing with 2D layered graphene oxide films integrated with CMOS compatible micro-ring resonators

Layered 2D graphene oxide (GO) films are integrated with microring resonators (MRRs) to experimentally demonstrate enhanced nonlinear optics in the form of four wave mixing (FWM). Both uniformly coated and patterned GO films are integrated on CMOS compatible doped silica MRRs using a large area, transfer free, layer by layer GO coating method together with photolithography and lift off processes, yielding precise control of the film thickness, placement, and coating length. The high Kerr nonlinearity and low loss of the GO films combined with the strong light matter interaction within the MRRs results in a significant improvement in the FWM efficiency in the hybrid MRRs. Detailed FWM measurements are performed at different pump powers and resonant wavelengths for the uniformly coated MRRs with 1 to 5 layers of GO as well as the patterned devices with 10 to 50 layers of GO. The experimental results show good agreement with theory, achieving up to 7.6 dB enhancement in the FWM conversion efficiency (CE) for an MRR uniformly coated with 1 layer of GO and 10.3 dB for a patterned device with 50 layers of GO. By fitting the measured CE as a function of pump power for devices with different numbers of GO layers, we also extract the dependence of the third-order nonlinearity on layer number and pump power, revealing interesting physical insights about the evolution of the layered GO films from 2D monolayers to quasi bulk like behavior. These results confirm the high nonlinear optical performance of integrated photonic resonators incorporated with 2D layered GO films.

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preprint2020arXiv

Enhanced nonlinear optical figure-of-merit at 1550nm for silicon nanowires integrated with graphene oxide layered films

Layered 2D GO films are integrated with silicon on insulator (SOI) nanowire waveguides to experimentally demonstrate an enhanced Kerr nonlinearity, observed through selfphase modulation (SPM). The GO films are integrated with SOI nanowires using a large area, transfer free, layer by layer coating method that yields precise control of the film thickness. The film placement and coating length are controlled by opening windows in the silica cladding of the SOI nanowires. Owing to the strong mode overlap between the SOI nanowires and the highly nonlinear GO films, the Kerr nonlinearity of the hybrid waveguides is significantly enhanced. Detailed SPM measurements using picosecond optical pulses show significant spectral broadening enhancement for SOI nanowires coated with 2.2 mm long films of 1 to 3 layers of GO, and 0.4 mm long films with 5 to 20 layers of GO. By fitting the experimental results with theory, the dependence of the n2 for GO on layer number and pulse energy is obtained, showing interesting physical insights and trends of the layered GO films from 2D monolayers to quasi bulk like behavior. Finally, we show that by coating SOI nanowires with GO films the effective nonlinear parameter of SOI nanowires is increased 16 times, with the effective nonlinear figure of merit (FOM) increasing by about 20 times to greater than 5. These results reveal the strong potential of using layered GO films to improve the Kerr nonlinear optical performance of silicon photonic devices.

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preprint2020arXiv

Large and negative Kerr nonlinearity in PdSe2 dichalcogenide 2D films

We report a large third order nonlinear optical response of palladium diselenide (PdSe2) films, a two dimensional (2D) noble metal dichalcogenide material. Both open aperture (OA) and closed aperture (CA) Z scan measurements are performed with a femtosecond pulsed laser at 800 nm to investigate the nonlinear absorption and nonlinear refraction, respectively. In the OA experiment, we observe optical limiting behaviour originating from large two photo absorption (TPA) in the PdSe2 film of beta = 3.26 x 10-8 m/W. In the CA experiment, we measure a peak-valley response corresponding to a large and negative Kerr nonlinearity of n2 = -1.33 x 10-15 m2/W, two orders of magnitude larger than bulk silicon. We also characterize the variation of n2 as a function of laser intensity, observing that n2 decreases in magnitude with incident laser intensity, becoming saturated at n2 = -9.96 x 10-16 m2/W at high intensities. These results verify the large third order nonlinear optical response of 2D PdSe2 as well as its strong potential for high performance nonlinear photonic devices.

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