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Tianlong Xia

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cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.str-el cond-mat.supr-con

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preprint2020arXiv

Evolution of superconductivity and antiferromagnetic order in Ba(Fe$_{0.92-x}$Co$_{0.08}$V$_x$)$_2$As$_2$

The vanadium doping effects on superconductivity and magnetism of iron pnictides are investigated in Ba(Fe$_{0.92-x}$Co$_{0.08}$V$_x$)$_2$As$_2$ by transport, susceptibility and neutron scattering measurements. The doping of magnetic impurity V causes a fast suppression of superconductivity with T$_c$ reduced at a rate of 7.4~K/1\%V. On the other hand, the long-range commensurate $C$-type antiferromagnetic order is recovered upon the V doping. The value of ordered magnetic moments of Ba(Fe$_{0.92-x}$Co$_{0.08}$V$_x$)$_2$As$_2$ follows a dome-like evolution versus doping concentration x. A possible Griffiths-type antiferromagnetic region of multiple coexisting phases in the phase diagram of Ba(Fe$_{0.92-x}$Co$_{0.08}$V$_x$)$_2$As$_2$ is identified, in accordance with previous theoretical predictions based on a cooperative behavior of the magnetic impurities and the conduction electrons mediating the Ruderman-Kittel-Kasuya-Yosida interactions between them.

preprint2019arXiv

Thickness-dependent in-plane polarization and structural phase transition in van der Waals Ferroelectric CuInP2S6

Van der Waals (vdW) layered materials have rather weaker interlayer bonding than the intra-layer bonding, therefore the exfoliation along the stacking direction enables the achievement of monolayer or few layers vdW materials with emerging novel physical properties and functionalities. The ferroelectricity in vdW materials recently attracts renewed interest for the potential use in high-density storage devices. As the thickness going thinner, the competition between the surface energy, depolarization field and interfacial chemical bonds may give rise to the modification of ferroelectricity and crystalline structure, which has limited investigations. In this work, combining the piezoresponse force microscope scanning, contact resonance imaging, we report the existence of the intrinsic in-plane polarization in vdW ferroelectrics CuInP2S6 (CIPS) single crystals, whereas below a critical thickness between 90-100 nm, the in-plane polarization disappears. The Young's modulus also shows an abrupt stiffness at the critical thickness. Based on the density functional theory calculations, we ascribe these behaviors to a structural phase transition from monoclinic to trigonal structure, which is further verified by transmission electron microscope technique. Taken together, these findings demonstrate the foundational importance of structural phase transition for enhancing the rich functionality and broad utility of vdW ferroelectrics.

preprint2016arXiv

Raman scattering in transition metal dichalcogenides MTe2 (M = Mo, W)

We performed comparable polarized Raman scattering studies of MoTe2 and WTe2. By rotating crystals to tune the angle between the principal axis of the crystals and the polarization of the incident/scattered light, we obtained the angle dependence of the intensities for all the observed modes, which is perfectly consistent with careful symmetry analysis. Combining these results with first-principles calculations, we clearly identified the observed phonon modes in the different phases of both crystals. Fifteen Raman-active phonon modes (10Ag+5Bg) in the high-symmetry phase 1T'-MoTe2 (300 K) were well assigned, and all the symmetry-allowed Raman modes (11A1+6A2) in the low-symmetry phase Td-MoTe2 (10 K) and 12 Raman phonons (8A1+4A2) in Td-WTe2 were observed and identified. The present work provides basic information about the lattice dynamics in transition-metal dichalcogenides and may shed some light on the understanding of the extremely large magnetoresistance (MR) in this class of materials.

preprint2015arXiv

Anomalous valley polarization in monolayer MoSe2

Modern electronic devices heavily rely on the accurate control of charge and spin of electrons. The emergence of controllable valley degree of freedom brings new possibilities and presents a promising prospect towards valleytronics. Recently, valley excitation selected by chiral optical pumping has been observed in monolayer MoS2. In this work, we report polarized photoluminescence (PL) measurements for monolayer MoSe2, another member of the family of transition-metal-dichalcogenides (MX2), and observe drastic difference from the outcomes of MoS2. In particular, we identify a valley polarization (VP) up to 70% for B exciton, while that for A exciton is less than 3%. Besides, we also find a small but finite negative VP for A- trion. These results reveal several new intra- and inter-valley scattering processes which significantly affect valley polarization, hence provide new insights into exciton physics in monolayer MX2 and possible valleytronic applications.