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Thomas Proslier

Thomas Proslier appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.supr-conphysics.acc-phphysics.plasm-phastro-ph.IM

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Published work

8 published item(s)

preprint2016arXiv

Superconducting Energy Scales and Anomalous Dissipative Conductivity in Thin Films of Molybdenum Nitride

We report investigations of molybdenum nitride (MoN) thin films with different thickness and disorder and with superconducting transition temperature 9.89 K $\ge{T_c}\ge$ 2.78 K. Using terahertz frequency-domain spectroscopy we explore the normal and superconducting charge carrier dynamics for frequencies covering the range from 3 to 38 cm$^{-1}$ (0.1 to 1.1 THz). The superconducting energy scales, i.e. the critical temperature $T_c$, the pairing energy $Δ$, and the superfluid stiffness $J$, and the superfluid density $n_s$ can be well described within the Bardeen-Cooper-Schrieffer theory for conventional superconductors. At the same time, we find an anomalously large dissipative conductivity, which cannot be explained by thermally excited quasiparticles, but rather by a temperature-dependent normal-conducting fraction, persisting deep into the superconducting state. Our results on this disordered system constrain the regime, where discernible effects stemming from the disorder-induced superconductor-insulator transition possibly become relevant, to MoN films with a transition temperature lower than at least 2.78 K.

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preprint2015arXiv

Analysis of Nb3Sn surface layers for superconducting RF cavity applications

We present an analysis of the Nb3Sn surface layers grown on a bulk niobium (Nb) coupon prepared at the same time and by the same vapor diffusion process used to make Nb3Sn coatings on 1.3 GHz cavities. Tunneling spectroscopy reveals a well-developed, homogeneous superconducting density of states at the surface with a gap value distribution centered around 2.7 meV and superconducting critical temperature (Tc) up to 16.3 K. Scanning Electron microscopy (STEM) performed on cross section of the sample's surface region shows a 2 microns thick Nb3Sn surface layer. The elemental composition map exhibits a Nb over Sn ratio of 3 and reveals the presence of buried sub-stoichiometric regions that have a ratio f 5. Synchrotron x-ray diffraction experiments indicate a polycrystalline Nb3Sn film and confirm the presence of Nb rich regions that occupy about a third of the coating volume. These low Tc regions could play an important role in the dissipation mechanism occurring during RF tests of Nb3Sn-coated cavities and open the way for further improving a very promising alternative to pure Nb cavities for particle accelerators.

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preprint2013arXiv

Heteroepitaxy of Group IV-VI Nitrides by Atomic Layer Deposition

Heteroepitaxial growth of selected group IV-VI nitrides on various orientations of sapphire (α-Al2O3) is demonstrated using atomic layer deposition. High quality, epitaxial films are produced at significantly lower temperatures than required by conventional deposition methods. Characterization of electrical and superconducting properties of epitaxial films reveals a reduced room temperature resistivity and increased residual resistance ratio (RRR) for films deposited on sapphire compared to polycrystalline samples deposited concurrently on fused quartz substrates.

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preprint2013arXiv

Tunneling spectroscopy of superconducting MoN and NbTiN grown by atomic layer deposition

A tunneling spectroscopy study is presented of superconducting MoN and Nb$_{0.8}$Ti$_{0.2}$N thin films grown by atomic layer deposition (ALD). The films exhibited a superconducting gap of 2meV and 2.4meV respectively with a corresponding critical temperature of 11.5K and 13.4K, among the highest reported $T_c$ values achieved by the ALD technique. Tunnel junctions were obtained using a mechanical contact method with a Au tip. While the native oxides of these films provided poor tunnel barriers, high quality tunnel junctions with low zero bias conductance (below $\sim$10%) were obtained using an artificial tunnel barrier of Al$_2$O$_3$ on the film's surface grown $\textit{ex situ}$ by ALD. We find a large critical current density on the order of $4\times 10^6$A/cm$^2$ at $T=0.8T_c$ for a 60nm MoN film and demonstrate conformal coating capabilities of ALD onto high aspect ratio geometries. These results suggest the ALD technique offers significant promise for thin film superconducting device applications.

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preprint2012arXiv

Modeling rf breakdown arcs II: plasma / materials interactions

Continuing the description of rf vacuum arcs from an earlier paper, we describe some aspects of the interaction of vacuum arcs that involve the surface. This paper describes aspects of plasma materials interactions that affect the arc and models measurement of the surface field using the Tonks-Frenkel and the spinodal electrohydrodynamic instabilities, a realistic model for the generation and evaluation of high field enhancements, unipolar arcs, creep and other effects.

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preprint2012arXiv

Surface impedance of superconductors with magnetic impurities

Motivated by the problem of the residual surface resistance of the superconducting radio-frequency (SRF) cavities, we develop a microscopic theory of the surface impedance of s-wave superconductors with magnetic impurities. We analytically calculate the current response function and surface impedance for a sample with spatially uniform distribution of impurities, treating magnetic impurities in the framework of the Shiba theory. The obtained general expressions hold in a wide range of parameter values, such as temperature, frequency, mean free path, and exchange coupling strength. This generality, on the one hand, allows for direct numerical implementation of our results to describe experimental systems (SRF cavities, superconducting qubits) under various practically relevant conditions. On the other hand, explicit analytical expressions can be obtained in a number of limiting cases, which makes possible further theoretical investigation of certain regimes. As a feature of key relevance to SRF cavities, we show that in the regime of "gapless superconductivity" the surface resistance exhibits saturation at zero temperature. Our theory thus explicitly demonstrates that magnetic impurities, presumably contained in the oxide surface layer of the SRF cavities, provide a microscopic mechanism for the residual resistance.

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preprint2011arXiv

Atomic layer deposition and superconducting properties of NbSi films

Atomic layer deposition was used to synthesize niobium silicide (NbSi) films with a 1:1 stoichiometry, using NbF5 and Si2H6 as precursors. The growth mechanism at 200oC was examined by in-situ quartz crystal microbalance (QCM) and quadrupole mass spectrometer (QMS). This study revealed a self-limiting reaction with a growth rate of 4.5 Å/cycle. NbSi was found to grow only on oxide-free films prepared using halogenated precursors. The electronic properties, growth rate, chemical composition, and structure of the films were studied over the deposition temperature range 150-400oC. For all temperatures, the films are found to be stoichiometric NbSi (1:1) with no detectable fluorine impurities, amorphous with a density of 6.65g/cm3, and metallic with a resistivity ρ=150 μΩ.cm at 300K for films thicker than 35 nm. The growth rate was nearly constant for deposition temperatures between 150-275oC, but increases above 300oC suggesting the onset of non-self limiting growth. The electronic properties of the films were measured down to 1.2K and revealed a superconducting transition at Tc=3.1K. To our knowledge, a superconducting niobium silicide film with a 1:1 stoichiometry has never been grown before by any technique.

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preprint2011arXiv

Modeling rf breakdown arcs

We describe breakdown in 805 MHz rf accelerator cavities in terms of a number of self consistent mechanisms. We divide the breakdown process into three stages: 1) we model surface failure using molecular dynamics of fracture caused by electrostatic tensile stress, 2) we model the ionization of neutrals responsible for plasma initiation and plasma growth using a particle in cell code, and 3) we model surface damage by assuming a process similar to unipolar arcing. We find that the cold, dense plasma in contact with the surface produces very small Debye lengths and very high electric fields over a large area, consistent with unipolar arc behavior, although unipolar arcs are strictly defined with equipotential boundaries. These high fields produce strong erosion mechanisms, primarily self sputtering, compatible with the crater formation that we see. We use OOPIC modeling to estimate very high surface electric fields in the dense plasma and measure these field using electrohydrodynamic arguments to relate the dimensions of surface damage with the applied electric field. We also present a geometrical explanation of the large enhancement factors of field emitters.This is consistent with the apparent absence of whiskers on surfaces exposed to high fields. The enhancement factors we derive, when combined with the Fowler-Nordheim analysis produce a consistent picture of breakdown and field emission from surfaces at local fields of 7 - 10 GV/m. We show that the plasma growth rates we obtain from OOPIC are consistent with growth rates of the cavity shorting currents using x ray measurements. We believe the general picture presented here for rf breakdown arcs should be directly applicable to a larger class of vacuum arcs. Results from the plasma simulation are included as a guide to experimental verification of this model.

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