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Researcher profile

Thomas Proslier

Thomas Proslier contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciastro-ph.IMcond-mat.supr-conphysics.acc-phphysics.plasm-ph

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Published work

4 published item(s)

preprint2013arXiv

Heteroepitaxy of Group IV-VI Nitrides by Atomic Layer Deposition

Heteroepitaxial growth of selected group IV-VI nitrides on various orientations of sapphire (α-Al2O3) is demonstrated using atomic layer deposition. High quality, epitaxial films are produced at significantly lower temperatures than required by conventional deposition methods. Characterization of electrical and superconducting properties of epitaxial films reveals a reduced room temperature resistivity and increased residual resistance ratio (RRR) for films deposited on sapphire compared to polycrystalline samples deposited concurrently on fused quartz substrates.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Modeling rf breakdown arcs II: plasma / materials interactions

Continuing the description of rf vacuum arcs from an earlier paper, we describe some aspects of the interaction of vacuum arcs that involve the surface. This paper describes aspects of plasma materials interactions that affect the arc and models measurement of the surface field using the Tonks-Frenkel and the spinodal electrohydrodynamic instabilities, a realistic model for the generation and evaluation of high field enhancements, unipolar arcs, creep and other effects.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Surface impedance of superconductors with magnetic impurities

Motivated by the problem of the residual surface resistance of the superconducting radio-frequency (SRF) cavities, we develop a microscopic theory of the surface impedance of s-wave superconductors with magnetic impurities. We analytically calculate the current response function and surface impedance for a sample with spatially uniform distribution of impurities, treating magnetic impurities in the framework of the Shiba theory. The obtained general expressions hold in a wide range of parameter values, such as temperature, frequency, mean free path, and exchange coupling strength. This generality, on the one hand, allows for direct numerical implementation of our results to describe experimental systems (SRF cavities, superconducting qubits) under various practically relevant conditions. On the other hand, explicit analytical expressions can be obtained in a number of limiting cases, which makes possible further theoretical investigation of certain regimes. As a feature of key relevance to SRF cavities, we show that in the regime of "gapless superconductivity" the surface resistance exhibits saturation at zero temperature. Our theory thus explicitly demonstrates that magnetic impurities, presumably contained in the oxide surface layer of the SRF cavities, provide a microscopic mechanism for the residual resistance.

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preprint2011arXiv

Atomic layer deposition and superconducting properties of NbSi films

Atomic layer deposition was used to synthesize niobium silicide (NbSi) films with a 1:1 stoichiometry, using NbF5 and Si2H6 as precursors. The growth mechanism at 200oC was examined by in-situ quartz crystal microbalance (QCM) and quadrupole mass spectrometer (QMS). This study revealed a self-limiting reaction with a growth rate of 4.5 Å/cycle. NbSi was found to grow only on oxide-free films prepared using halogenated precursors. The electronic properties, growth rate, chemical composition, and structure of the films were studied over the deposition temperature range 150-400oC. For all temperatures, the films are found to be stoichiometric NbSi (1:1) with no detectable fluorine impurities, amorphous with a density of 6.65g/cm3, and metallic with a resistivity ρ=150 μΩ.cm at 300K for films thicker than 35 nm. The growth rate was nearly constant for deposition temperatures between 150-275oC, but increases above 300oC suggesting the onset of non-self limiting growth. The electronic properties of the films were measured down to 1.2K and revealed a superconducting transition at Tc=3.1K. To our knowledge, a superconducting niobium silicide film with a 1:1 stoichiometry has never been grown before by any technique.

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