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Michael J. Pellin

Michael J. Pellin appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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astro-ph.SRcond-mat.mtrl-scicond-mat.supr-con

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Published work

7 published item(s)

preprint2015arXiv

Correlated Strontium and Barium Isotopic Compositions of Acid-Cleaned Single Silicon Carbides from Murchison

We present strontium, barium, carbon, and silicon isotopic compositions of 61 acid-cleaned presolar SiC grains from Murchison. Comparison with previous data shows that acid washing is highly effective in removing both strontium and barium contamination. For the first time, by using correlated $^{88}Sr$/$^{86}Sr$ and $^{138}Ba$/$^{136}Ba$ ratios in mainstream SiC grains, we are able to resolve the effect of $^{13}C$ concentration from that of $^{13}C$-pocket mass on s-process nucleosynthesis, which points towards the existence of large $^{13}C$-pockets with low $^{13}C$ concentration in AGB stars. The presence of such large $^{13}$R-pockets with a variety of relatively low $^{13}C$ concentrations seems to require multiple mixing processes in parent AGB stars of mainstream SiC grains.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

The $^{13}C$-pockets in AGB Stars and Their Fingerprints in Mainstream SiC Grains

We identify three isotopic tracers that can be used to constrain the $^{13}C$-pocket and show the correlated isotopic ratios of Sr and Ba in single mainstream presolar SiC grains. These newly measured data can be explained by postprocess AGB model calculations with large $^{13}C$-pockets with a range of relatively low $^{13}C$ concentrations, which may suggest that multiple mixing processes contributed to the $^{13}C$-pocket formation in parent AGB stars.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Barium Isotopic Composition of Mainstream Silicon Carbides from Murchison: Constraints for s-Process Nucleosynthesis in AGB Stars

We present barium, carbon, and silicon isotopic compositions of 38 acid-cleaned presolar SiC grains from Murchison. Comparison with previous data shows that acid washing is highly effective in removing barium contamination. Strong depletions in $δ$($^{138}$Ba/$^{136}$Ba) values are found, down to $-$400 permil, which can only be modeled with a flatter $^{13}$C profile within the $^{13}$C pocket than is normally used. The dependence of $δ$($^{138}$Ba/$^{136}$Ba) predictions on the distribution of $^{13}$C within the pocket in AGB models allows us to probe the $^{13}$C profile within the $^{13}$C pocket and the pocket mass in asymptotic giant branch (AGB) stars. In addition, we provide constraints on the $^{22}$Ne$(α,n)^{25}$Mg rate in the stellar temperature regime relevant to AGB stars, based on $δ$($^{134}$Ba/$^{136}$Ba) values of mainstream grains. We found two nominally mainstream grains with strongly negative $δ$($^{134}$Ba/$^{136}$Ba) values that cannot be explained by any of the current AGB model calculations. Instead, such negative values are consistent with the intermediate neutron capture process ($i$-process), which is activated by the Very Late Thermal Pulse (VLTP) during the post-AGB phase and characterized by a neutron density much higher than the $s$-process. These two grains may have condensed around post-AGB stars. Finally, we report abundances of two $p$-process isotopes, $^{130}$Ba and $^{132}$Ba, in single SiC grains. These isotopes are destroyed in the $s$-process in AGB stars. By comparing their abundances with respect to that of $^{135}$Ba, we conclude that there is no measurable decay of $^{135}$Cs ($t_{1/2}$= 2.3 Ma) to $^{135}$Ba in individual SiC grains, indicating condensation of barium, but not cesium into SiC grains before $^{135}$Cs decayed.

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preprint2014arXiv

The 13C-Pocket Structure in AGB Models: Constraints from Zirconium Isotope Abundances in Single Mainstream SiC Grains

We present postprocess AGB nucleosynthesis models with different $^{13}$C-pocket internal structures to better explain zirconium isotope measurements in mainstream presolar SiC grains by Nicolussi et al. (1997) and Barzyk et al. (2007). We show that higher-than-solar $^{92}$Zr/$^{94}$Zr ratios can be predicted by adopting a $^{13}$C-pocket with a flat $^{13}$C profile, instead of the previous decreasing-with-depth $^{13}$C profile. The improved agreement between grain data for zirconium isotopes and AGB models provides additional support for a recent proposal of a flat $^{13}$C profile based on barium isotopes in mainstream SiC grains by Liu et al. (2014).

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preprint2013arXiv

Heteroepitaxy of Group IV-VI Nitrides by Atomic Layer Deposition

Heteroepitaxial growth of selected group IV-VI nitrides on various orientations of sapphire (α-Al2O3) is demonstrated using atomic layer deposition. High quality, epitaxial films are produced at significantly lower temperatures than required by conventional deposition methods. Characterization of electrical and superconducting properties of epitaxial films reveals a reduced room temperature resistivity and increased residual resistance ratio (RRR) for films deposited on sapphire compared to polycrystalline samples deposited concurrently on fused quartz substrates.

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preprint2013arXiv

Tunneling spectroscopy of superconducting MoN and NbTiN grown by atomic layer deposition

A tunneling spectroscopy study is presented of superconducting MoN and Nb$_{0.8}$Ti$_{0.2}$N thin films grown by atomic layer deposition (ALD). The films exhibited a superconducting gap of 2meV and 2.4meV respectively with a corresponding critical temperature of 11.5K and 13.4K, among the highest reported $T_c$ values achieved by the ALD technique. Tunnel junctions were obtained using a mechanical contact method with a Au tip. While the native oxides of these films provided poor tunnel barriers, high quality tunnel junctions with low zero bias conductance (below $\sim$10%) were obtained using an artificial tunnel barrier of Al$_2$O$_3$ on the film's surface grown $\textit{ex situ}$ by ALD. We find a large critical current density on the order of $4\times 10^6$A/cm$^2$ at $T=0.8T_c$ for a 60nm MoN film and demonstrate conformal coating capabilities of ALD onto high aspect ratio geometries. These results suggest the ALD technique offers significant promise for thin film superconducting device applications.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Surface impedance of superconductors with magnetic impurities

Motivated by the problem of the residual surface resistance of the superconducting radio-frequency (SRF) cavities, we develop a microscopic theory of the surface impedance of s-wave superconductors with magnetic impurities. We analytically calculate the current response function and surface impedance for a sample with spatially uniform distribution of impurities, treating magnetic impurities in the framework of the Shiba theory. The obtained general expressions hold in a wide range of parameter values, such as temperature, frequency, mean free path, and exchange coupling strength. This generality, on the one hand, allows for direct numerical implementation of our results to describe experimental systems (SRF cavities, superconducting qubits) under various practically relevant conditions. On the other hand, explicit analytical expressions can be obtained in a number of limiting cases, which makes possible further theoretical investigation of certain regimes. As a feature of key relevance to SRF cavities, we show that in the regime of "gapless superconductivity" the surface resistance exhibits saturation at zero temperature. Our theory thus explicitly demonstrates that magnetic impurities, presumably contained in the oxide surface layer of the SRF cavities, provide a microscopic mechanism for the residual resistance.

0 citations0 reviewsNo code linkedOpen access