Researcher profile

Michael J. Pellin

Michael J. Pellin contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2014arXiv

Barium Isotopic Composition of Mainstream Silicon Carbides from Murchison: Constraints for s-Process Nucleosynthesis in AGB Stars

We present barium, carbon, and silicon isotopic compositions of 38 acid-cleaned presolar SiC grains from Murchison. Comparison with previous data shows that acid washing is highly effective in removing barium contamination. Strong depletions in $δ$($^{138}$Ba/$^{136}$Ba) values are found, down to $-$400 permil, which can only be modeled with a flatter $^{13}$C profile within the $^{13}$C pocket than is normally used. The dependence of $δ$($^{138}$Ba/$^{136}$Ba) predictions on the distribution of $^{13}$C within the pocket in AGB models allows us to probe the $^{13}$C profile within the $^{13}$C pocket and the pocket mass in asymptotic giant branch (AGB) stars. In addition, we provide constraints on the $^{22}$Ne$(α,n)^{25}$Mg rate in the stellar temperature regime relevant to AGB stars, based on $δ$($^{134}$Ba/$^{136}$Ba) values of mainstream grains. We found two nominally mainstream grains with strongly negative $δ$($^{134}$Ba/$^{136}$Ba) values that cannot be explained by any of the current AGB model calculations. Instead, such negative values are consistent with the intermediate neutron capture process ($i$-process), which is activated by the Very Late Thermal Pulse (VLTP) during the post-AGB phase and characterized by a neutron density much higher than the $s$-process. These two grains may have condensed around post-AGB stars. Finally, we report abundances of two $p$-process isotopes, $^{130}$Ba and $^{132}$Ba, in single SiC grains. These isotopes are destroyed in the $s$-process in AGB stars. By comparing their abundances with respect to that of $^{135}$Ba, we conclude that there is no measurable decay of $^{135}$Cs ($t_{1/2}$= 2.3 Ma) to $^{135}$Ba in individual SiC grains, indicating condensation of barium, but not cesium into SiC grains before $^{135}$Cs decayed.

preprint2013arXiv

Heteroepitaxy of Group IV-VI Nitrides by Atomic Layer Deposition

Heteroepitaxial growth of selected group IV-VI nitrides on various orientations of sapphire (α-Al2O3) is demonstrated using atomic layer deposition. High quality, epitaxial films are produced at significantly lower temperatures than required by conventional deposition methods. Characterization of electrical and superconducting properties of epitaxial films reveals a reduced room temperature resistivity and increased residual resistance ratio (RRR) for films deposited on sapphire compared to polycrystalline samples deposited concurrently on fused quartz substrates.

preprint2012arXiv

Surface impedance of superconductors with magnetic impurities

Motivated by the problem of the residual surface resistance of the superconducting radio-frequency (SRF) cavities, we develop a microscopic theory of the surface impedance of s-wave superconductors with magnetic impurities. We analytically calculate the current response function and surface impedance for a sample with spatially uniform distribution of impurities, treating magnetic impurities in the framework of the Shiba theory. The obtained general expressions hold in a wide range of parameter values, such as temperature, frequency, mean free path, and exchange coupling strength. This generality, on the one hand, allows for direct numerical implementation of our results to describe experimental systems (SRF cavities, superconducting qubits) under various practically relevant conditions. On the other hand, explicit analytical expressions can be obtained in a number of limiting cases, which makes possible further theoretical investigation of certain regimes. As a feature of key relevance to SRF cavities, we show that in the regime of "gapless superconductivity" the surface resistance exhibits saturation at zero temperature. Our theory thus explicitly demonstrates that magnetic impurities, presumably contained in the oxide surface layer of the SRF cavities, provide a microscopic mechanism for the residual resistance.