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Thomas Prokscha

Thomas Prokscha contributes to research discovery and scholarly infrastructure.

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Published work

7 published item(s)

preprint2023arXiv

Evidence for current suppression in superconductor-superconductor bilayers

Superconducting radio frequency (SRF) cavities, which are critical components in many particle accelerators, need to be operated in the Meissner state to avoid strong dissipation from magnetic vortices. For a defect-free superconductor, the maximum attainable magnetic field for operation is set by the superheating field, $B_{\mathrm{sh}}$, which directly depends on the surface current. In heterostructures composed of different superconductors, the current in each layer depends not only on the properties of the individual material, but also on the electromagnetic response of the adjacent layers through boundary conditions at the interfaces. Three prototypical bilayers [$\mathrm{Nb_{1-x}Ti_xN}$(50 nm)/Nb, $\mathrm{Nb_{1-x}Ti_xN}$(80 nm)/Nb, and $\mathrm{Nb_{1-x}Ti_xN}$(160 nm)/Nb] are investigated here by depth-resolved measurements of their Meissner screening profiles using low-energy muon spin rotation (LE-$μ$SR). From fits to a model based on London theory (with appropriate boundary and continuity conditions), a magnetic penetration depth for the thin $\mathrm{Nb_{1-x}Ti_xN}$ layers of $λ_\mathrm{Nb_{1-x}Ti_xN} =$ 182.5(31) nm is found, in good agreement with literature values for the bulk alloy. Using the measured $λ_\mathrm{Nb_{1-x}Ti_xN}$, the maximum vortex-free field, $B_{\mathrm{max}}$, of the superconductor-superconductor (SS) bilayer structure was estimated to be 610(40) mT. The strong suppression of the surface current in the $\mathrm{Nb_{1-x}Ti_xN}$ layer suggests an optimal thickness of $\sim 1.4 λ_{\mathrm{Nb_{1-x}Ti_xN}} =$ 261(14) nm.

preprint2022arXiv

Characterization of a continuous muon source for the Muon-Induced X-ray Emission (MIXE) Technique

The toolbox for material characterization has never been richer than today. Great progress with all kinds of particles and interaction methods provide access to nearly all properties of an object under study. However, a tomographic analysis of the subsurface region remains still a challenge today. In this regard, the Muon-Induced X-ray Emission (MIXE) technique has seen rebirth fueled by the availability of high intensity muon beams. We report here a study conducted at the Paul Scherrer Institute (PSI). It demonstrates that the absence of any beam time-structure leads to low pile-up events and a high signal-to-noise ratio (SNR) with less than one hour acquisition time per sample or data point. This performance creates the perspective to open this technique to a wider audience for the routine investigation of non-destructive and depth-sensitive elemental compositions, for example in rare and precious samples. Using a hetero-structured sample of known elements and thicknesses, we successfully detected the characteristic muonic X-rays, emitted during the capture of a negative muon by an atom, and the gamma-rays resulting from the nuclear capture of the muon, characterizing the capabilities of MIXE at PSI. This sample emphasizes the quality of a continuous beam, and the exceptional SNR at high rates. Such sensitivity will enable totally new statistically intense aspects in the field of MIXE, e.g. elemental 3D-tomography and chemical analysis. Therefore, we are currently advancing our proof-of-concept experiments with the goal of creating a full fledged permanently operated user station to make MIXE available to the wider scientific community as well as industry.

preprint2022arXiv

Defect Profiling of Oxide-Semiconductor Interfaces Using Low-Energy Muons

Muon spin rotation with low-energy muons (LEμSR) is a powerful nuclear method where electrical and magnetic properties of surface-near regions and thin films can be studied on a length scale of $\approx$\SI{200}{\nano\meter}. In this work, we show the potential of utilizing low-energy muons for a depth-resolved characterization of oxide-semiconductor interfaces, i.e. for silicon (Si) and silicon carbide (4H-SiC). Silicon dioxide (SiO$_2$) grown by plasma-enhanced chemical vapor deposition (PECVD) and by thermal oxidation of the SiO$_2$-semiconductor interface are compared with respect to interface and defect formation. The nanometer depth resolution of μallows for a clear distinction between the oxide and semiconductor layers, while also quantifying the extension of structural changes caused by the oxidation of both Si and SiC.

preprint2022arXiv

Discovery of an electronic crystal in a cuprate Mott insulator

Copper oxide high temperature superconductors universally exhibit multiple forms of electronically ordered phases that break the native translational symmetry of the CuO2 planes. The interplay between these orders and the superconducting ground state, as well as how they arise through doping a Mott insulator, is essential to decode the mechanisms of high-temperature superconductivity. Over the years, various forms of electronic liquid crystal phases including charge/spin stripes and incommensurate charge-density-waves (CDWs) were found to emerge out of a correlated metallic ground state in underdoped cuprates. Early theoretical studies also predicted the emergence of a Coulomb-frustrated 'charge crystal' phase in the very lightly-doped, insulating limit of the CuO2 planes. Here, we use resonant X-ray scattering, electron transport, and muon spin rotation measurements to fully resolve the electronic and magnetic ground state and search for signatures of charge order in very lightly hole-doped cuprates from the RBa2Cu3O7-d family (RBCO; R: Y or rare earth). X-ray scattering data from RBCO films reveal a breaking of translational symmetry more pervasive than was previously known, extending down to the Mott limit. The ordering vector of this charge crystal state is linearly connected to the charge-density-waves of underdoped RBCO, suggesting that the former phase is a precursor to the latter as hole doping is increased. Most importantly, the coexistence of charge and spin order in RBCO suggests that this electronic symmetry-breaking state is common to the CuO2 planes in the very lightly-doped regime. These findings bridge the gap between the Mott insulating state and the underdoped metallic state and underscore the prominent role of Coulomb-frustrated electronic phase separation among all cuprates.

preprint2022arXiv

Simulation studies for upgrading a high-intensity surface muon beamline at Paul Scherrer Institute

The $μ$E4-LEM beamline at Paul Scherrer Institute (PSI, Switzerland) is a special muon beamline combining the hyprid type surface muon beamline $μ$E4 with the low energy muon facility (LEM) and delivers $μ^{+}$ with tunable energy up to 30 keV for low-energy muon spin rotation experiments (LE-$μ$SR). We investigate a possible upgrade scenario for the surface muon beamline $μ$E4 by replacing the last set of quadrupole triplet with a special solenoid to obtain 1.4 times original beam intensity on the LEM muon moderator target. In order to avoid the muon beam intensity loss at the LEM spectrometer due to the stray magnetic field of the solenoid, three kinds of solenoid models have been explored and the stray field of the solenoid at the LEM facility is finally reduced to the magnitude of the geomagnetic field. A more radical design, "Super-$μ$E4", has also been investigated for further increasing the brightness of the low energy muon beam, where we make use of the current $μ$E4 channel and all sets of quadrupole triplets are replaced by large aperture solenoids. Together with the new slanted muon target E, at least 2.9 times the original muon beam intensity can be expected in the Super-$μ$E4 beamline. Our work demonstrates the feasibility of upgrading surface muon beamlines by replacing quadrupole magnets with normal-conducting solenoids, resulting in higher muon rates and smaller beam spot sizes.

preprint2020arXiv

Proximity-Induced Odd-Frequency Superconductivity in a Topological Insulator

At an interface between a topological insulator (TI) and a conventional superconductor (SC), superconductivity has been predicted to change dramatically and exhibit novel correlations. In particular, the induced superconductivity by an $s$-wave SC in a TI can develop an order parameter with a $p$-wave component. Here we present experimental evidence for an unexpected proximity-induced novel superconducting state in a thin layer of the prototypical TI, Bi$_2$Se$_3$, proximity coupled to Nb. From depth-resolved magnetic field measurements below the superconducting transition temperature of Nb, we observe a local enhancement of the magnetic field in Bi$_2$Se$_3$ that exceeds the externally applied field, thus supporting the existence of an intrinsic paramagnetic Meissner effect arising from an odd-frequency superconducting state. Our experimental results are complemented by theoretical calculations supporting the appearance of such a component at the interface which extends into the TI. This state is topologically distinct from the conventional Bardeen-Cooper-Schrieffer state it originates from. To the best of our knowledge, these findings present a first observation of bulk odd-frequency superconductivity in a TI. We thus reaffirm the potential of the TI-SC interface as a versatile platform to produce novel superconducting states.

preprint2018arXiv

Kubo spins in nano-scale aluminum grains: A muon spin relaxation study

We report muon spin relaxation rate measurements on films composed of aluminum grains having a size of a few nm, with a large energy level splitting of the order of 100 K. The films range from weakly metallic to insulating. In the insulating case the low temperature relaxation rate is consistent with the presence of single electron spins in grains having an odd number of electrons. The relaxation rate temperature dependence follows an activation law having an energy scale in agreement with the average level splitting. In weakly metallic films the relaxation rate is smaller and decreases faster with temperature. Overall our observations are in line with the presence of a Kubo spin in Al nano-size grains due to quantum size effects.