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Thomas Frauenheim

Thomas Frauenheim appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallphysics.comp-phphysics.chem-phcond-mat.str-elcond-mat.stat-mechcond-mat.supr-conquant-ph

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Published work

42 published item(s)

preprint2024arXiv

Optically Helicity-Dependent Orbital and Spin Dynamics in Two-Dimensional Ferromagnets

Disentangling orbital (OAM) and spin (SAM) angular momenta in the ultrafast spin dynamics of two-dimensional (2D) ferromagnets on subfemtoseconds is a challenge in the field of ultrafast magnetism. Herein, we employed non-collinear spin version of real-time time-dependent density functional theory to investigate the orbital and spin dynamics of 2D ferromagnets Fe3GeTe2 (FGT) induced by circularly polarized light. Our results show the demagnetization of Fe sublattice in FGT is accompanied by helicity-dependent precession of OAM and SAM excited by circularly polarized lasers. We further identify that precession of OAM and SAM in FGT is faster than the demagnetization within a few femtoseconds. Remarkably, circularly polarized lasers can significantly induce a periodically transverse response of OAM and SAM on very ultrafast timescales of ~250 attoseconds. Our finding suggests a powerful new route for attosecond regimes of the angular momentum manipulation to coherently control helicity-dependent orbital and spin dynamics in 2D limits.

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preprint2022arXiv

Dynamical evolution of the Schottky barrier as a determinant contribution to electron-hole pair stabilization and photocatalysis of plasmon-induced hot carriers

The harnessing of plasmon-induced hot carriers promises to open new avenues for the development of clean energies and chemical catalysis. The extraction of carriers before thermalization and recombination is of primordial importance to obtain appealing conversion yields. Here, hot carrier injection in the paradigmatic Au-TiO$_{2}$ system is studied by means of electronic and electron-ion dynamics. Our results show that pure electronic features (without considering many-body interactions or dissipation to the environment) contribute to the electron-hole separation stability. These results reveal the existence of a dynamic contribution to the interfacial potential barrier (Schottky barrier) that arises at the charge injection pace, impeding electronic back transfer. Furthermore, we show that this charge separation stabilization provides the time needed for the charge to leak to capping molecules placed over the TiO$_{2}$ surface triggering a coherent bond oscillation that will lead to a photocatalytic dissociation. We expect that our results will add new perspectives to the interpretation of the already detected long-lived hot carrier lifetimes, their catalytical effect, and concomitantly to their technological applications.

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preprint2022arXiv

Fano resonance and incoherent interlayer excitons in molecular van der Waals heterostructures

Complex van der Waals heterostructures from layered molecular stacks are promising optoelectronic materials offering means to efficient, modular charge separation and collection layers. The effect of stacking in the electrodynamics of such hybrid organic-inorganic two-dimensional materials remains largely unexplored, whereby molecular scale engineering could lead to advanced optical phenomena. For instance, tunable Fano engineering could make possible on-demand transparent conducting layers or photoactive elements, and passive cooling. We employ an adapted Gersten-Nitzan model and real time time-dependent density functional tight-binding to study the optoelectronics of self-assembled monolayers on graphene nanoribbons. We find Fano resonances that cause electromagnetic induced opacity and transparency, and reveal an additional incoherent process leading to interlayer exciton formation with a characteristic charge transfer rate. These results showcase hybrid van der Waals heterostructures as paradigmatic 2D optoelectronic stacks, featuring tunable Fano optics and unconventional charge transfer channels.

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preprint2022arXiv

Ultrafast optically induced magnetic state transition in 2D antiferromagnets

Manipulating spin in antiferromagnetic (AFM) materials has great potential in AFM opto-spintronics. Laser pulses can induce a transient ferromagnetic (FM) state in AFM metallic systems, but have never been proven in two-dimensional (2D) AFM semiconductors and related van der Waals (vdW) heterostructures. Here, using 2D vdW heterostructures of FM MnS2 and AFM MXenes as prototypes, we investigated optically induced interlayer spin transfer dynamics based on the real-time time-dependent density functional theory (rt-TDDFT). We observed that laser pulses induce significant spin injection and the interfacial atom-mediated spin transfer from MnS2 to Cr2CCl2. In particular, we first demonstrated the transient FM state in semiconducting AFM/FM heterostructures during photoexcited processes. Because the proximity magnetism breaks the magnetic symmetry of Cr2CCl2 in heterostructures. Our results provide the microscopic understanding for optically controlled interlayer spin dynamics in 2D magnetic heterostructures and open a new way to manipulate magnetic orders in ultrafast opto-spintronics.

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preprint2021arXiv

Water reactions on reconstructed rutile TiO$_2$: a DFT / DFTB approach

Far from being conclusively understood, the reactive interaction of water with rutile does still present a challenge to atomistic modelling techniques rooted on quantum mechanics. We show that static geometries of stoichiometric TiO$_2$/water interfaces can be described well by Density Functional Tight Binding (DFTB). However, this method needs further improvements to reproduce the low dissociation propensity of H$_2$O after adsorption predicted by Density Functional Theory (DFT). A reliable description of the surface reactivity of water is fundamental to investigate the non-stoichiometric reconstruction of the (001) facet rich in Ti interstitials. Calculations based on (DFT) predict the transition temperature for the onset of reconstruction in remarkable agreement with experiments and suggest that this surface, in contact with liquid water, can promote spontaneous H$_2$O splitting and formation of H$_2$ molecules.

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preprint2020arXiv

A Koopmans-compliant screened exchange potential with correct asymptotic behavior for semiconductors

The performance of density functional theory depends largely on the approximation applied for the exchange functional. We propose here a novel screened exchange potential for semiconductors, with parameters based on the physical properties of the underlying microscopic screening and obeying the requirements for proper asymptotic behavior. We demonstrate that this functional is Koopmans-compliant and reproduces a wide range of band gaps. We also show, that the only tunable parameter of the functional can be kept constant upon changing the cation or the anion isovalently, making the approach suitable for treating alloys.

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preprint2020arXiv

A real-time time-dependent density functional tight-binding implementation for semiclassical excited state electron-nuclear dynamics and pump-probe spectroscopy simulations

The increasing need to simulate the dynamics of photoexcited molecular and nanosystems in the sub-picosecond regime demands new efficient tools able to describe the quantum nature of matter at a low computational cost. By combining the power of the approximate DFTB method with the semiclassical Ehrenfest method for nuclear-electron dynamics we have achieved a real-time time-dependent DFTB (TD-DFTB) implementation that fits such requirements. In addition to enabling the study of nuclear motion effects in photoinduced charge transfer processes, our code adds novel features to the realm of static and time-resolved computational spectroscopies. In particular, the optical properties of periodic materials such as graphene nanoribbons or the use of corrections such as the "LDA+U" and "pseudo SIC" methods to improve the optical properties in some systems, can now be handled at the TD-DFTB level. Moreover, the simulation of fully-atomistic time-resolved transient absorption spectra and impulsive vibrational spectra can now be achieved within reasonable computing time, owing to the good performance of the implementation and a parallel simulation protocol. Its application to the study of UV/visible light-induced vibrational coherences in molecules is demonstrated and opens a new door into the mechanisms of non-equilibrium ultrafast phenomena in countless materials with relevant applications.

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preprint2020arXiv

Chemical functionalization, electronic and dielectric properties of hybrid organic-tin layers

Band gap tuning and dielectric properties of small organic ligands adsorbed on tin monolayers (stanene) have been investigated using first-principles calculations. Charge density analysis using density-functional theory shows that the ligands are chemisorbed on stanene and some of the groups can open a band gap in the originally metallic statene. Furthermore many-body GW calculations demonstrate that the dielectric properties of bare and ligand adsorbed stanene have a large anisotropy. Our findings of a finite gap opens a path for rational theoretical design of functionalized two-dimensional stanene.

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preprint2020arXiv

High Throughput Screening of Transition Metal Binuclear Site for N2 Fixation

Great enthusiasm in single atom catalysts (SACs) for the N2 reduction reaction (NRR) has been aroused by the discovery of Metal (M)-Nx as a promising catalytic center. However,the performance of available SACs,including poor activity and selectivity,is far away from the industrial requirement because of the inappropriate adsorption behaviors of the catalytic centers. Through the first principles high throughput screening, we find that the rational construction of Fe-Fe dual atom centered site distributed on graphite carbon nitride (Fe2/gCN) compromises the ability to adsorb N2H and NH2, achieving the best NRR performance among 23 different transition metal (TM) centers. Our results show that Fe2/gCN can achieve a Faradic efficiency of 100% for NH3 production. Impressively, the limiting potential of Fe2/gCN is estimated as low as -0.13 V, which is hitherto the lowest value among the reported theoretical results. Multiple level descriptors (excess electrons on the adsorbed N2 and integrated crystal orbital Hamilton population) shed light on the origin of NRR activity from the view of energy, electronic structure, and basic characteristics. As a ubiquitous issue during electrocatalytic NRR, ammonia contamination originating from the substrate decomposition can be surmounted. Our predictions offer a new platform for electrocatalytic synthesis of NH3, contributing to further elucidate the structure-performance correlations.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Optically driven ultrafast magnetic order transitions in two-dimensional ferrimagnets

Laser-induced switching and manipulation of the spins in magnetic materials are of great interest to revolutionize future magnetic storage technology and spintronics with fastest speed and least power dissipative. Inspired by the recent discovery of intrinsic two-dimensional (2D) magnets, which provide unique platform to explore the new phenomenon for light-control magnetism in the 2D limit, we propose to realize light can efficiently tune magnetic properties of 2D ferrimagnets in early time. Here, using the 2D ferrimagnetic MXenes as prototype systems, our real-time density functional theory (TDDFT) simulation show that laser pulses can directly induce ultrafast spin-selective charge transfer between two magnetic sublattices on a few femtoseconds, and further generate dramatic changes in the magnetic structure of these MXenes, including a magnetic order transition from ferrimagnetic (FiM) to transient ferromagnetic (FM). The microscopic mechanism underpinning this ultrafast switching of magnetic order in MXenes is governed by optically induced inter-site spin transfer (OISTR) effect, which theoretically enables the ultrafast direct optical manipulation of the magnetic state in MXenes-based materials. Our results open new opportunities to optically manipulate the spin in 2D magnets.

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preprint2020arXiv

Pentaoctite phase: A new group V allotrope

By performing firt-principles electronic calculations we propose new a phase of group-V allotropes of antimonene, arsenene and phosphorene in the pentaoctite structure. By calculating the phonon spectra, we show that all these phases are stable. Whereas these structures have a indirect band gap, they can be made direct gap materials by applying external strain. GW calculations of the dielectric function demonstrate that all these structures have an absorption spectrum in the visible region, which could be useful for group-V optoelectronics.

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preprint2020arXiv

Self-consistent potential correction for charged periodic systems

Supercell models are often used to calculate the electronic structure of local perturbations from the ideal periodicity in the bulk or on the surface of a crystal or in wires. When the defect or adsorbent is charged, a jellium counter charge is applied to maintain overall neutrality, but the interaction of the artificially repeated charges has to be corrected, both in the total energy and in the one-electron eigenvalues and eigenstates. This becomes paramount in slab or wire calculations, where the jellium counter charge may induce spurious states in the vacuum. We present here a self-consistent potential correction scheme and provide successful tests of it for bulk and slab calculations.

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preprint2019arXiv

Electronic Properties of Defective MoS$_{2}$ Monolayers Subject to Mechanical Deformations: A First-Principles Approach

Monolayers (ML) of Group-6 transition-metal dichalcogenides (TMDs) are semiconducting two-dimensional materials with direct bandgap, showing promising applications in various fields of science and technology, such as nanoelectronics and optoelectronics. These monolayers can undergo strong elastic deformations, up to about 10\%, without any bond breaking. Moreover, the electronic structure and transport properties, which define the performance of these TMDs monolayers in nanoelectronic devices, can be strongly affected by the presence of point defects, which are often present in the synthetic samples. Thus, it is important to understand both effects on the electronic properties of such monolayers. In this work, we have investigated the electronic structure and energetic properties of defective MoS$_{2}$ monolayers, as subject to various strains, using density functional theory simulations. Our results indicated that strain leads to strong modifications of the defect levels inside the bandgap and their orbital characteristics. Strain also splits the degenerate defect levels up to an amount of 450~meV, proposing novel applications.

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preprint2019arXiv

GW electronic structure calculations of Co doped ZnO

Recently the point defect responsible for the intra-3$d$ luminescence of cobalt in doped ZnO samples has been indentified\,\cite{pssb2019}. In this work we further extend our investigation to other point defects in Co-doped ZnO. We use density-functional theory and GW calculations to determined the orbital-resolved band structure of cobalt doped zinc oxide (ZnO). We show that mainly O-p and Co-d orbitals take part in the process and confirm that an oxygen interstitial nearby a cobalt atom is a likely defect to occur in Co-implanted ZnO samples. We also rule out that other common point defects in ZnO can be responsible for the observed intra-3$d$ transition. Finally, we suggest that defect complexes involving oxygen interstitials could be used to promote ferromagnetism in cobalt doped ZnO samples.

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preprint2016arXiv

New Quantum Spin Hall Insulator in Two-dimensional MoS$_2$ with Periodically Distributed Pores

MoS$_2$, one of transition metal dichalcogenides (TMDs), has caused a lot of attentions for its excellent semiconductor characteristics and potential applications. Here, based on the density functional theory methods, we predict a novel 2D quantum spin hall (QSH) insulator in the porous allotrope of monolayer MoS$_2$ (g-MoS$_2$), consisting of MoS$_2$ square and hexagon. The g-MoS$_2$ has a nontrivial gap as large as 109 meV, comparable with previous reported 1T'-MoS$_2$ (80 meV), so-MoS$_2$ (25 meV). We demonstrate that the origin of 2D QSH effect in g-MoS$_2$ originates from the pure d-d band interaction, different from conventional band inversion between s$-$p, p$-$p or d$-$p orbitals. Such new polymorph greatly enriches the TMDs family and its stabilities are confirmed by phonon spectrum analysis. In particular, porous structure also endows it potential application in efficient gas separation and energy storage.

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preprint2016arXiv

Rectangular Tantalum Carbide Halides TaCX (X = Cl, Br, I) monolayer: Novel Large-Gap Quantum Spin Hall Insulator

Quantum spin Hall (QSH) insulators possess edge states that are topologically protected from backscattering. However, known QSH materials (e.g. HgTe/CdTe and InAs/GaSb quantum wells) exhibit very small energy gap and only work at low temperature, hindering their applications for room temperature devices. Based on the first-principles calculations, we predict a novel family of QSH insulators in monolayer tantalum carbide halide TaCX (X = Cl, Br, and I) with unique rectangular lattice and large direct energy gaps larger than 0.2 eV, accurately, 0.23$-$0.36 eV. The mechanism for 2D QSH effect in this system originates from a intrinsic d$-$d band inversion, different from conventional QSH systems with band inversion between s$-$p or p$-$p orbitals. Further, stain and intrinsic electric field can be used to tune the electronic structure and enhance the energy gap. TaCX nanoribbon, which has single-Dirac-cone edge states crossing the bulk band gap, exhibits a linear dispersion with a high Fermi velocity comparable to that of graphene. These 2D materials with considerable nontrivial gaps promise great application potential in the new generation of dissipationless electronics and spintronics.

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preprint2015arXiv

Controllable magnetic correlation between two impurities by spin-orbit coupling in graphene

Two magnetic impurities on the edge of a zigzag graphene nanoribbon strongly interact with each other via indirect coupling, which can be mediated by conducting carriers. By means of Quantum Monte Carlo (QMC) simulations, we find that the spin-orbit coupling $λ$ and the chemical potential $μ$ in system can be used to drive the transition of local-spin exchange from ferromagnetism to anti-ferromagnetism. Since the tunable ranges for $λ$ and $μ$ in graphene are experimentally reachable, we thus open the possibilities for its device application. The symmetry in spatial distribution is broken by the vertical and the transversal spin-spin correlations due to the effect of spin-orbit coupling, leading to the spatial anisotropy of spin exchange, which distinguish our findings from the case in normal Fermi liquid.

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preprint2015arXiv

How the aggregation of oxygen vacancies in rutile based TiO$_{2-δ}$ phases causes memristive behavior

The results of a comprehensive and systematic ab-initio based ground-state search for the structural arrangement of oxygen vacancies in rutile phase TiO$_2$ provide new insights into their memristive properties. We find that O vacancies tend to form planar arrangements which relax into structures exhibiting metallic behavior. These meta-stable arrangements are structurally akin to, yet distinguishable from the Magnéli phase. They exhibit a more pronounced metallic nature, but are energetically less favorable. Our results confirm a clear structure-property relationship between segregated oxygen vacancy arrangement and metallic behavior in reduced oxides.

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preprint2015arXiv

New Family of Quantum Spin Hall Insulators in Two-dimensional Transition-Metal Halide with Large Nontrivial Band Gaps

Topological insulators (TIs) are promising for achieving dissipationless transport devices due to the robust gapless states inside the insulating bulk gap. However, currently realized 2D TIs, quantum spin Hall (QSH) insulators, suffer from ultra-high vacuum and extremely low temperature. Thus, seeking for desirable QSH insulators with high feasibility of experimental preparation and large nontrivial gap is of great importance for wide applications in spintronics. Based on the first-principles calculations, we predict a novel family of two-dimensional (2D) QSH insulators in transition-metal halide MX (M = Zr, Hf; X = Cl, Br, and I) monolayers with large nontrivial gaps of 0.12$-$0.4 eV, comparable with bismuth (111) bilayer (0.2 eV), stanene (0.3 eV) and larger than ZrTe$_5$ (0.1 eV) monolayers and graphene-based sandwiched heterstructures (30$-$70 meV). Their corresponding 3D bulk materials are weak topological insulators from stacking QSH layers, and some of bulk compounds have already been synthesized in experiment. The mechanism for 2D QSH effect in this system originates from a novel d$-$d band inversion, which is different from conventional band inversion between s$-$s orbitals, or p$-$p orbitals. The realization of pure layered MX monolayers may be prepared by exfoliation from their 3D bulk phases, thus holding great promise for nanoscale device applications and stimulating further efforts on transition metal-based QSH materials.

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preprint2015arXiv

Phosphorene and Doped Monolayers Interfaced TiO$_2$ with Type-II Band Alignments: Novel Excitonic Solar Cells

Phosphorene, a new elemental two dimensional (2D) material recently isolated by mechanical exfoliation, holds the feature of a direct band gap of around 2.0 eV, overcoming graphene's weaknesses (zero band gap) to realize the potential application in optoelectronic devices. Constructing van der Waals heterostructures is an efficient approach to modulate the band structure, to advance the charge separation efficiency, and thus to optimize the optoelectronic properties. Here, we theoretically investigated three type-II heterostructures based on perfect phosphorene and its doped monolayers interfaced with TiO$_2$(110) surface. Doping in phosphorene has a tunability on built-in potential, charge transfer, light absorbance, as well as electron dynamics, which helps to optimize the light absorption efficiency. Three excitonic solar cells (XSCs) based on the phosphorene$-$TiO$_2$ heterojunctions have been proposed, which exhibit high power conversion efficiencies dozens of times higher than conventional solar cells, comparable to MoS$_2$/WS$_2$ XSC. The nonadiabatic molecular dynamics within the time-dependent density functional theory framework shows ultrafast electron transfer time of 6.1$-$10.8 fs, and slow electron$-$hole recombination of 0.58$-$1.08 ps, yielding $>98\%$ quantum efficiency for charge separation, further guaranteeing the practical power conversion efficiencies in XSC.

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preprint2015arXiv

The Driven Liouville von Neumann Equation in Lindblad Form

The Driven Liouville von Neumann approach [J. Chem. Theory Comput. 10, 2927-2941 (2014)] is a computationally efficient simulation method for modeling electron dynamics in molecular electronics junctions. Previous numerical simulations have shown that the method can reproduce the exact single-particle dynamics while avoiding density matrix positivity violation found in earlier implementations. In this study we prove that, in the limit of infinite lead models, the underlying equation of motion can be cast in Lindblad form. This provides a formal justification for the positivity and trace preservation obtained numerically.

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preprint2015arXiv

Towards rational design of catalysts supported on a topological insulator substrate

Exotic and robust metallic surface states of topological insulators (TIs) have been expected to provide a promising platform for novel surface chemistry and catalysis. However, it is still an unprecedented field how TIs affect the activity of catalysts. In this work, we study the effects of topological surface states (TSSs) on the activity of transition metal clusters (Au, Ag, Cu, Pt, and Pd), which are supported on a TI Bi2Se3 substrate. It was found the adsorption energy of oxygen on the supported catalysts can be always enhanced due to the TSSs. However, it does not necessarily mean an increase of the activity in catalytic oxidation reaction. Rather, the enhanced adsorption behavior in the presence of TSSs exhibits dual effects, determined by the intrinsic reactivity of these catalysts with oxygen. For the Au case, the activity of catalytic oxidation can be improved because the intrinsic binding between Au and O is relatively weak. In contrast, a negative effect is found for the Pt and Pd clusters since the intrinsic binding of Pt and Pd with oxygen is too strong. We also found that the effect of TSSs on the activity of hydrogen evolution reaction (HER) is quite similar, i.e. the metals with original weak reactivity can gain a positive effect from TSSs. The present work can pave a way for more rational design and selection of catalysts when using TIs as substrates.

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preprint2014arXiv

New Family of Robust 2D Topological Insulators in van der Waals Heterostructures

We predict a new family of robust two-dimensional (2D) topological insulators in van der Waals heterostructures comprising graphene and chalcogenides BiTeX (X=Cl, Br and I). The layered structures of both constituent materials produce a naturally smooth interface that is conducive to proximity induced new topological states. First principles calculations reveal intrinsic topologically nontrivial bulk energy gaps as large as 70-80 meV, which can be further enhanced up to 120 meV by compression. The strong spin-orbit coupling in BiTeX has a significant influence on the graphene Dirac states, resulting in the topologically nontrivial band structure, which is confirmed by calculated nontrivial Z2 index and an explicit demonstration of metallic edge states. Such heterostructures offer an unique Dirac transport system that combines the 2D Dirac states from graphene and 1D Dirac edge states from the topological insulator, and it offers new ideas for innovative device designs.

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preprint2014arXiv

Opening Band Gap without Breaking Lattice Symmetry: A New Route toward Robust Graphene-Based Nanoelectronics

Developing graphene-based nanoelectronics hinges on opening a band gap in the electronic structure of graphene, which is commonly achieved by breaking the inversion symmetry of the graphene lattice via an electric field (gate bias) or asymmetric doping of graphene layers. Here we introduce a new design strategy that places a bilayer graphene sheet sandwiched between two cladding layers of materials that possess strong spin-orbit coupling (e.g., Bi2Te3). Our ab initio and tight-binding calculations show that proximity enhanced spin-orbit coupling effect opens a large (44 meV) band gap in bilayer graphene without breaking its lattice symmetry, and the band gap can be effectively tuned by interlayer stacking pattern and significantly enhanced by interlayer compression. The feasibility of this quantum-well structure is demonstrated by recent experimental realization of high-quality heterojunctions between graphene and Bi2Te3, and this design also conforms to existing fabrication techniques in the semiconductor industry. The proposed quantum-well structure is expected to be especially robust since it does not require an external power supply to open and maintain a band gap, and the cladding layers provide protection against environmental degradation of the graphene layer in its device applications.

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preprint2014arXiv

Phosphorene as a superior gas sensor: Selective adsorption and distinct I-V response

Recent reports on the fabrication of phosphorene, i.e., mono- or few-layer black phosphorus, have raised exciting prospects of an outstanding two-dimensional (2D) material that exhibits excellent properties for nanodevice applications. Here we study by first-principles calculations the adsorption of CO, CO2, NH3, NO and NO2 gas molecules on a mono-layer phosphorene. Our results predict superior sensing performance of phosphorene that rivals or even surpasses other 2D materials such as graphene and MoS2. We determine the optimal adsorption positions of these molecules on the phosphorene and identify molecular doping, i.e., charge transfer between the molecules and phosphorene, as the driving mechanism for the high adsorption strength. We further calculated the current-voltage (I-V) relation using a non-equilibrium Greens function (NEGF) formalism. The transport features show large (one to two orders of magnitude) anisotropy along different (armchair or zigzag) directions, which is consistent with the anisotropic electronic band structure of phosphorene. Remarkably, the I-V relation exhibits distinct responses with a marked change of the I-V relation along either the armchair or the zigzag directions depending on the type of molecules. Such selectivity and sensitivity to adsorption makes phosphorene a superior gas sensor that promises wide-ranging applications.

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preprint2014arXiv

Stabilization Mechanism of ZnO nanoparticles by Fe doping

Surprisingly low solubility and toxicity of Fe-doped ZnO nanoparticles is elucidated on the basis of first-principles calculations. Various ZnO surfaces that could be present in nanoparticles are subject to substitutional Fe doping. We show that Fe stabilizes polar instable surfaces, while non-polar surfaces, namely (1010) and (1120), remain intact. Polar surfaces can be stabilized indirectly through Fe2+-Fe3+ pair assisted charge transfer, what reduces surface polarity and therefore, the solubility in polar solvents.

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preprint2013arXiv

A permutation invariant collective variable to track and drive vacancy dynamics in simulations of solids

Vacancy dynamics in oxides are vital for understanding redox reactions and resulting memristive effects or catalytic activity. We present a method to track and drive vacancies which we apply to metadynamics simulation of oxygen vacancies (V$_{\mathrm{O}}$) in rutile, demonstrating its effectiveness. Using the density functional based tight binding method, it is possible to explore the free energy hyperplane of oxygen vacancies in TiO$_{2}$. We show that the migration of V$_{\mathrm{O}}$ in TiO$_{2}$ is governed by the jump with the higherst number of realizations. Free energy profiles are consistent with minimum energy paths.

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preprint2013arXiv

Atomistic modeling of dynamical quantum transport

We present dynamical transport calculations based on a tight-binding approximation to adiabatic time-dependent density functional theory (TD-DFTB). The reduced device density matrix is propagated through the Liouville-von Neumann equation. For the model system, 1,4-benzenediol coupled to aluminum leads, we are able to confirm the equality of the steady state current resulting from a time-dependent calculation to a static calculation in the conventional Landauer framework. We also investigate the response of the junction subjected to alternating bias voltages with frequencies up to the optical regime. Here we can clearly identify capacitive behaviour of the molecular device and a significant resonant enhancement of the conductance. The results are interpreted using an analytical single level model comparing the device transmission and admittance. In order to aid future calculations under alternating bias, we shortly review the use of Fourier transform techniques to obtain the full frequency response of the device from a single current trace.

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preprint2013arXiv

Calculation ofthe transitions and migration of nitrogen and vacancy related defects,with implications on the formation of NV centers in bulk diamond

Formation and excitation energies as well charge transition levels, are determined forthe substitutional nitrogen (Ns),the vacancy (V) and related point defects (NV, NVH, N2, N2V and V2) by screened non-local hybrid density functional supercell plane wave calculations in bulk diamond. In additionthe activation energy for V and NV diffusion is calculated.We find good agreement between theory and experiment for the previously well-establisheddata, and predict missing ones. Based on the calculated properties of these defects, the formation of the negatively charged nitrogen-vacancy center is studied, which is a prominent candidate for application in quantum information processing and for nanosensors. We find that the concentration of NV defects are limited in natural diamonds due to the relatively high formation energy of NV. Our results imply that NV defects dominantly form just in the early stage of annealing in N-doped and irradiated diamonds. We find that the amphoteric divacancy defect with multiple acceptor states may significantly influence the charge state and photo-stability of NV in irradiated diamond samples.

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preprint2013arXiv

Charge doping induced phase transitions in hydrogenated and fluorinated graphene

We show that charge doping can induce transitions between three distinct adsorbate phases in hydrogenated and fluorinated graphene. By combining ab initio, approximate density functional theory and tight binding calculations we identify a transition from islands of C$_8$H$_2$ and C$_8$F$_2$ to random adsorbate distributions around a doping level of $\pm 0.05$ e/C-atom. Furthermore, in situations with random adsorbate coverage, charge doping is shown to trigger an ordering transition where the sublattice symmetry is spontaneously broken when the doping level exceeds the adsorbate concentration. Rehybridization and lattice distortion energies make graphene which is covalently functionalized from one side only most susceptible to these two kinds of phase transitions. The energy gains associated with the clustering and ordering transitions exceed room temperature thermal energies.

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preprint2013arXiv

Graphene-based topological insulator with an intrinsic bulk band gap above room temperature

Topological insulators (TIs) represent a new quantum state of matter characterized by robust gapless states inside the insulating bulk gap. The metallic edge states of a two-dimensional (2D) TI, known as quantum spin Hall (QSH) effect, are immune to backscattering and carry fully spin-polarized dissipationless currents. However, existing 2D TIs realized in HgTe and InAs/GaSb suffer from small bulk gaps (<10 meV) well below room temperature, thus limiting their application in electronic and spintronic devices. Here, we report a new 2D TI comprising a graphene layer sandwiched between two Bi2Se3 slabs that exhibits a large intrinsic bulk band gap of 30 to 50 meV, making it viable for room-temperature applications. Distinct from previous strategies for enhancing the intrinsic spin-orbit coupling effect of the graphene lattice, the present graphene-based TI operates on a new mechanism of strong inversion between graphene Dirac bands and Bi2Se3 conduction bands. Strain engineering leads to effective control and substantial enhancement of the bulk gap. Recently reported synthesis of smooth graphene/Bi2Se3 interfaces demonstrates feasibility of experimental realization of this new 2D TI structure, which holds great promise for nanoscale device applications.

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preprint2013arXiv

Magnetic Impurity Affected by Spin-Orbit Coupling: Behavior near a Topological Phase Transition

We investigate the effect of spin-orbit coupling on the behavior of magnetic impurity at the edge of a zigzag graphene ribbon by means of quantum Monte Carlo simulations. A peculiar interplay of Kane-Mele type spin-orbit and impurity-host coupling is found to affect local properties such as the impurity magnetic moment and spectral densities. The special helical nature of the topological insulator on the edge is found to affect nonlocal quantities, such as the two-particle and spin-spin correlation functions linking electrons on the impurity with those in the conduction band.

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preprint2013arXiv

Strain Engineering of Selective Chemical Adsorption on Monolayer MoS_2

Nanomaterials are prone to influence by chemical adsorption because of their large surface to volume ratios. This enables sensitive detection of adsorbed chemical species which, in turn, can tune the property of the host material. Recent studies discovered that single and multilayer molybdenum disulfide (MoS_2) films are ultra sensitive to several important environmental molecules. Here we report new findings from ab initio calculations that reveal substantially enhanced adsorption of NO and NH3 on strained monolyaer MoS2 with significant impact on the properties of the adsorbates and MoS2 layer. The magnetic moment of adsobed NO can be turned between 0 and 1 uB, strain also induces an electronic phase transition between half-metal and metal. Adsorption of NH3 weakens the MoS2 layer considerably, which explains the large discrepacy between the experimentally measured strength and breaking strain of MoS2 film from previous theoretical predictions. On the other hand, adsorption of NO2, CO and CO2 is insensitive to the strain condition in the MoS2 layer. This contrasting behavior allows sensitive strain engineering of selective chemical adsorption on MoS2 with effective tuning of mechanical, electronic and magnetic properties. These result suggest new design strategies for constructing MoS2 based ultrahigh sensitivity nanoscale sensor and electromechanical devices.

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preprint2013arXiv

Thermodynamics of quantum coherence

Quantum decoherence is seen as an undesired source of irreversibility that destroys quantum resources. Quantum coherences seem to be a property that vanishes at thermodynamic equilibrium. Away from equilibrium, quantum coherences challenge the classical notions of a thermodynamic bath in a Carnot engines, affect the efficiency of quantum transport, lead to violations of Fourier's law, and can be used to dynamically control the temperature of a state. However, the role of quantum coherence in thermodynamics is not fully understood. Here we show that the relative entropy of a state with quantum coherence with respect to its decohered state captures its deviation from thermodynamic equilibrium. As a result, changes in quantum coherence can lead to a heat flow with no associated temperature, and affect the entropy production rate. From this, we derive a quantum version of the Onsager reciprocal relations that shows that there is a reciprocal relation between thermodynamic forces from coherence and quantum transport. Quantum decoherence can be useful and offers new possibilities of thermodynamic control for quantum transport.

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preprint2011arXiv

Gas Doping on the Topological Insulator Bi2Se3 Surface

Gas molecule doping on the topological insulator Bi2 Se3 surface with existing Se vacancies is investigated using first-principles calculations. Consistent with experiments, NO2 and O2 are found to occupy the Se vacancy sites, remove vacancy-doped electrons and restore the band structure of a perfect surface. In contrast, NO and H2 do not favour passivation of such vacancies. Interestingly we have revealed a NO2 dissociation process that can well explain the speculative introduced "photon-doping" effect reported by recent experiments. Experimental strategies to validate this mechanism are presented. The choice and the effect of different passivators are discussed. This step paves the way for the usage of such materials in device applications utilizing robust topological surface states.

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preprint2011arXiv

Time-dependent versus static quantum transport simulations beyond linear response

To explore whether the density-functional theory non-equilibrium Green's function formalism (DFT-NEGF) provides a rigorous framework for quantum transport, we carried out time-dependent density functional theory (TDDFT) calculations of the transient current through two realistic molecular devices, a carbon chain and a benzenediol molecule inbetween two aluminum electrodes. The TDDFT simulations for the steady state current exactly reproduce the results of fully self-consistent DFT-NEGF calculations even beyond linear response. In contrast, sizable differences are found with respect to an equilibrium, non-self-consistent treatment which are related here to differences in the Kohn-Sham and fully interacting susceptibility of the device region. Moreover, earlier analytical conjectures on the equivalence of static and time-dependent approaches in the low bias regime are confirmed with high numerical precision.

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preprint2010arXiv

Silicon nanowire band gap modification

Band gap modification for small-diameter (1 nm) silicon nanowires resulting from the use of different species for surface termination is investigated by density functional theory calculations. Because of quantum confinement, small-diameter wires exhibit a direct band gap that increases as the wire diameter narrows, irrespective of surface termination. This effect has been observed in previous experimental and theoretical studies for hydrogenated wires. For a fixed cross-section, the functional group used to saturate the silicon surface significantly modifies the band gap, resulting in relative energy shifts of up to an electronvolt. The band gap shifts are traced to details of the hybridization between the silicon valence band and the frontier orbitals of the terminating group, which is in competition with quantum confinement.

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preprint2010arXiv

Theoretical prediction of topological insulator in ternary rare earth chalcogenides

A new class of three-dimensional topological insulator, ternary rare earth chalcogenides, is theoretically investigated with ab initio calculations. Based on both bulk band structure analysis and the direct calculation of topological surface states, we demonstrate that LaBiTe3 is a topological insulator. La can be substituted by other rare earth elements, which provide candidates for novel topological states such as quantum anomalous Hall insulator, axionic insulator and topological Kondo insulator. Moreover, YBiTe3 and YSbTe3 are found to be normal insulators. They can be used as protecting barrier materials for both LaBiTe3 and Bi2Te3 families of topological insulators for their well matched lattice constants and chemical composition.

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preprint2010arXiv

Theoretical Prediction of Topological Insulators in Thallium-based III-V-VI$_2$ Ternary Chalcogenides

We predict a new class of three dimensional topological insulators in thallium-based III-V-VI$_2$ ternary chalcogenides, including TlBiQ$_2$ and TlSbQ$_2$ (Q = Te, Se and S). These topological insulators have robust and simple surface states consisting of a single Dirac cone at the $Γ$ point. The mechanism for topological insulating behavior is elucidated using both first principle calculations and effective field theory models. Remarkably, one topological insulator in this class, TlBiTe$_2$ is also a superconductor when doped with $p$-type carriers. We discuss the possibility that this material could be a topological superconductor. Another material TlSbS$_2$ is on the border between topological insulator and trivial insulator phases, in which a topological phase transition can be driven by pressure.

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preprint2009arXiv

Oscillatory crossover from two dimensional to three dimensional topological insulators

We investigate the crossover regime from three dimensional topological insulators $Bi_2Te_3$ and $Bi_2Se_3$ to two dimensional topological insulators with quantum spin Hall effect when the layer thickness is reduced. Using both analytical models and first-principles calculations, we find that the crossover occurs in an oscillatory fashion as a function of the layer thickness, alternating between topologically trivial and non-trivial two dimensional behavior.

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preprint2009arXiv

The absorption spectrum of hydrogenated silicon carbide nanocrystals from ab initio calculations

The electronic structure and absorption spectrum of hydrogenated silicon carbide nanocrystals (SiCNC) have been determined by first principles calculations. We show that the reconstructed surface can significantly change not just the onset of absorption, but the \emph{shape} of the spectrum at higher energies. We found that the absorption treshold of the reconstructed SiCNs cannot be accurately predicted from traditional density functional theory calculations.

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preprint2002arXiv

Electronic structure of overstretched DNA

Minuscule molecular forces can transform DNA into a structure that is elongated by more than half its original length. We demonstrate that this pronounced conformational transition is of relevance to ongoing experimental and theoretical efforts to characterize the conducting properties of DNA wires. We present quantum mechanical calculations for acidic, dry, poly(CG).poly(CG) DNA which has undergone elongation of up to 90 % relative to its natural length, along with a method for visualizing the effects of stretching on the electronic eigenstates. We find that overstretching leads to a drastic drop of the hopping matrix elements between localized occupied electronic states suggesting a dramatic decrease in the conductivity through holes.

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