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Thomas Archer

Thomas Archer contributes to research discovery and scholarly infrastructure.

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Published work

6 published item(s)

preprint2015arXiv

Designing a fully-compensated half-metallic ferrimagnet

Recent experimental work on Mn2RuxGa demonstrates its potential as a compensated ferrimagnetic half-metal (CFHM).Here we present a set of high-throughput ab initio density functional theory calculations and detailed experimental characterisation, that enable us to correctly describe the nominal Mn2RuxGa thin films, in particular with regard to site-disorder and defects. We then construct models that accurately capture all the key features of the Mn-Ru-Ga system, including magnetic compensation and the spin gap at the Fermi level. We find that electronic doping is neccessary, which is achieved with a Mn/Ga ratio smaller than two. Our study shows how composition and substrate-induced biaxial strain can be combined to design the first room-temperature CFHM.

preprint2013arXiv

Spin-filtering efficiency of ferrimagnetic spinels CoFe2O4 and NiFe2O4

We assess the potential of the ferrimagnetic spinel ferrites CoFe2O4 and NiFe2O4 to act as spin filtering barriers in magnetic tunnel junctions. Our study is based on the electronic structure calculated by means of first-principles density functional theory within different approximations for the exchange correlation energy. We show that, in agreement with previous calculations, the densities of states suggest a lower tunneling barrier for minority spin electrons, and thus a negative spin-filter effect. However, a more detailed analysis based on the complex band-structure reveals that both signs for the spin-filtering efficiency are possible, depending on the band alignment between the electrode and the barrier materials and depending on the specific wave-function symmetry of the relevant bands within the electrode.

preprint2012arXiv

Coexistance of giant tunneling electroresistance and magnetoresistance in an all-oxide magnetic tunnel junction

We demonstrate with first-principles electron transport calculations that large tunneling magnetoresistance (TMR) and tunneling electroresistance (TER) effects can coexist in an all-oxide device. The TMR originates from the symmetry-driven spin filtering provided by the insulating BaTiO3 barrier to the electrons injected from SrRuO3. In contrast the TER is possible only when a thin SrTiO3 layer is intercalated at one of the SrRuO3/BaTiO3 interfaces. As the complex band-structure of SrTiO3 has the same symmetry than that of BaTiO3, the inclusion of such an intercalated layer does not negatively alter the TMR and in fact increases it. Crucially, the magnitude of the TER also scales with the thickness of the SrTiO3 layer. The SrTiO3 thickness becomes then a single control parameter for both the TMR and the TER effect. This protocol offers a practical way to the fabrication of four-state memory cells.

preprint2010arXiv

Large bias-dependent magnetoresistance in all-oxide magnetic tunnel junctions with a ferroelectric barrier

All-oxide magnetic tunnel junctions (MTJs) incorporating functional materials as insulating barriers have the potential of becoming the founding technology for novel multi-functional devices. We investigate, by first-principles density functional theory, the bias-dependent transport properties of an all-oxide SrRuO3/BaTiO3/SrRuO3 MTJ. This incorporates a BaTiO3 barrier which can be found either in a non-ferroic or in a ferroelectric state. In such an MTJ not only can the tunneling magnetoresistance reach enormous values, but also, for certain voltages, its sign can be changed by altering the barrier electric state. These findings pave the way for a new generation of electrically-controlled magnetic sensors.

preprint2010arXiv

Magnetic interaction of Co ions near the {10\bar{1}0} ZnO surface

Co-doped ZnO is the prototypical dilute magnetic oxide showing many of the characteristics of ferromagnetism. The microscopic origin of the long range order however remains elusive, since the conventional mechanisms for the magnetic interaction, such as super-exchange and double exchange, fail either at the fundamental or at a quantitative level. Intriguingly, there is a growing evidence that defects both in point-like or extended form play a fundamental role in driving the magnetic order. Here we explore one of such possibilities by performing {\it ab initio} density functional theory calculations for the magnetic interaction of Co ions at or near a ZnO \{10$\bar{1}$0\} surface. We find that extended surface states can hybridize with the $e$-levels of Co and efficiently mediate the magnetic order, although such a mechanism is effective only for ions placed in the first few atomic planes near the surface. We also find that the magnetic anisotropy changes at the surface from an hard-axis easy-plane to an easy axis, with an associated increase of its magnitude. We then conclude that clusters with high densities of surfacial Co ions may display blocking temperatures much higher than in the bulk.

preprint2009arXiv

The magnetism of wurtzite CoO nanoclusters

The possibility that the apparent room temperature ferromagnetism, often measured in Co-doped ZnO, is due to uncompensated spins at the surface of wurtzite CoO nanoclusters is investigated by means of a combination of density functional theory and Monte Carlo simulations. We find that the critical temperature extracted from the specific heat systematically drops as the cluster size is reduced, regardless of the particular cluster shape. Furthermore the presence of defects, in the form of missing magnetic sites, further reduces $T_\mathrm{C}$. This suggests that even a spinodal decomposed phase is unlikely to sustain room temperature ferromagnetism in ZnO:Co.