Researcher profile

Nuala M. Caffrey

Nuala M. Caffrey contributes to research discovery and scholarly infrastructure.

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Published work

5 published item(s)

preprint2016arXiv

Structural and electronic properties of Li intercalated graphene on SiC(0001)

We investigate the structural and electronic properties of Li-intercalated monolayer graphene on SiC(0001) using combined angle-resolved photoemission spectroscopy and first-principles density functional theory. Li intercalates at room temperature both at the interface between the buffer layer and SiC and between the two carbon layers. The graphene is strongly $n$-doped due to charge transfer from the Li atoms and two $π$-bands are visible at the $\bar{K}$-point. After heating the sample to 300$^\circ$C, these $π$-bands become sharp and have a distinctly different dispersion to that of Bernal-stacked bilayer graphene. We suggest that the Li atoms intercalate between the two carbon layers with an ordered structure, similar to that of bulk LiC$_6$. An AA-stacking of these two layers becomes energetically favourable. The $π$-bands around the $\bar{K}$-point closely resemble the calculated band structure of a C$_6$LiC$_6$ system, where the intercalated Li atoms impose a super-potential on the graphene electronic structure that opens pseudo-gaps at the Dirac points of the two $π$-cones.

preprint2014arXiv

Tunnelling anisotropic magnetoresistance effect of single adatoms on a noncollinear magnetic surface

The tunnelling anisotropic magnetoresistance (TAMR) effect describes the sensitivity of spin-polarized electron transport to the orientation of the magnetization with respect to the crystallographic axes. As the TAMR effect requires only a single magnetic electrode, in contrast to the tunnelling magnetoresistance effect, it offers an attractive route towards alternative spintronics applications. In this work we consider the TAMR effect at the single-atom limit by investigating the anisotropy of the local density of states in the vacuum above transition-metal adatoms adsorbed on a noncollinear magnetic surface, the monolayer of Mn on W(110). This surface presents a cycloidal spin spiral ground state with an angle of 173$^\circ$ between neighbouring spins and thus allows a quasi-continuous exploration of the angular dependence of the TAMR of adsorbed adatoms using scanning tunnelling microscopy. Using first-principles calculations, we investigate the TAMR of Co, Rh and Ir adatoms on Mn/W(110) and relate our results to magnetization direction dependent changes in the local density of states. The anisotropic effect is found to be enhanced dramatically on the adsorption of heavy transition-metal atoms, with values of up to 50% predicted from our calculations. This effect will be measurable even with a non-magnetic STM tip.

preprint2013arXiv

Atomic-scale inversion of spin polarization at an organic-antiferromagnetic interface

Using first-principles calculations, we show that the magnetic properties of a two-dimensional antiferromagnetic transition-metal surface are modified on the atomic scale by the adsorption of small organic molecules. We consider benzene (C6H6), cyclooctatetraene (C8H8) and a small transition metal - benzene complex (BzV) adsorbed on a single atomic layer of Mn deposited on the W(110) surface -- a surface which exhibits a nearly antiferromagnetic alignment of the magnetic moments in adjacent Mn rows. Due to the spin-dependent hybridization of the molecular pz orbitals with the d states of the Mn monolayer there is a significant reduction of the magnetic moments in the Mn film. Furthermore, the spin-polarization at this organic-antiferromagnetic interface is found to be modulated on the atomic scale, both enhanced and inverted, as a result of the molecular adsorption. We show that this effect can be resolved by spin-polarized scanning tunneling microscopy (SP-STM). Our simulated SP-STM images display a spatially-dependent spin-resolved vacuum charge density above an adsorbed molecule -- i.e., different regions above the molecule sustain different signs of spin polarization. While states with s and p symmetry dominate the vacuum charge density in the vicinity of the Fermi energy for the clean magnetic surface, we demonstrate that after a molecule is adsorbed those d-states, which are normally suppressed due to their symmetry, can play a crucial role in the vacuum due to their interaction with the molecular orbitals. We also model the effect of small deviations from perfect antiferromagnetic ordering, induced by the slight canting of magnetic moments due to the spin spiral ground state of Mn/W(110).

preprint2013arXiv

Spin-filtering efficiency of ferrimagnetic spinels CoFe2O4 and NiFe2O4

We assess the potential of the ferrimagnetic spinel ferrites CoFe2O4 and NiFe2O4 to act as spin filtering barriers in magnetic tunnel junctions. Our study is based on the electronic structure calculated by means of first-principles density functional theory within different approximations for the exchange correlation energy. We show that, in agreement with previous calculations, the densities of states suggest a lower tunneling barrier for minority spin electrons, and thus a negative spin-filter effect. However, a more detailed analysis based on the complex band-structure reveals that both signs for the spin-filtering efficiency are possible, depending on the band alignment between the electrode and the barrier materials and depending on the specific wave-function symmetry of the relevant bands within the electrode.

preprint2010arXiv

Large bias-dependent magnetoresistance in all-oxide magnetic tunnel junctions with a ferroelectric barrier

All-oxide magnetic tunnel junctions (MTJs) incorporating functional materials as insulating barriers have the potential of becoming the founding technology for novel multi-functional devices. We investigate, by first-principles density functional theory, the bias-dependent transport properties of an all-oxide SrRuO3/BaTiO3/SrRuO3 MTJ. This incorporates a BaTiO3 barrier which can be found either in a non-ferroic or in a ferroelectric state. In such an MTJ not only can the tunneling magnetoresistance reach enormous values, but also, for certain voltages, its sign can be changed by altering the barrier electric state. These findings pave the way for a new generation of electrically-controlled magnetic sensors.