Researcher profile

Tess Williams

Tess Williams contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2014arXiv

Fermi Surface and Pseudogap Evolution in a Cuprate Superconductor

The unclear relationship between cuprate superconductivity and the pseudogap state remains an impediment to understanding the high transition temperature (Tc) superconducting mechanism. Here we employ magnetic-field-dependent scanning tunneling microscopy to provide phase-sensitive proof that d-wave superconductivity coexists with the pseudogap on the antinodal Fermi surface of an overdoped cuprate. Furthermore, by tracking the hole doping (p) dependence of the quasiparticle interference pattern within a single Bi-based cuprate family, we observe a Fermi surface reconstruction slightly below optimal doping, indicating a zero-field quantum phase transition in notable proximity to the maximum superconducting Tc. Surprisingly, this major reorganization of the system's underlying electronic structure has no effect on the smoothly evolving pseudogap.

preprint2013arXiv

Dopant Clustering, Electronic Inhomogeneity, and Vortex Pinning in Iron-Based Superconductors

We use scanning tunneling microscopy to map the surface structure, nanoscale electronic inhomogeneity, and vitreous vortex phase in the hole-doped superconductor Sr$_{0.75}$K$_{0.25}$Fe$_2$As$_2$ with $T_c$=32 K. We find the low-$T$ cleaved surface is dominated by a half-Sr/K termination with $1\times 2$ ordering and ubiquitous superconducting gap, while patches of gapless, unreconstructed As termination appear rarely. The superconducting gap varies by $σ/\barΔ$=16% on a $\sim$3 nm length scale, with average $2\barΔ/k_B T_c=3.6$ in the weak coupling limit. The vortex core size provides a measure of the superconducting coherence length $ξ$=2.3 nm. We quantify the vortex lattice correlation length at 9 T in comparison to several iron-based superconductors. The comparison leads us to suggest the importance of dopant size mismatch as a cause of dopant clustering, electronic inhomogeneity, and strong vortex pinning.