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Source author record

Teruya Shinjo

Teruya Shinjo appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallphysics.app-phcond-mat.other

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Published work

17 published item(s)

preprint2020arXiv

Modulation of spin conversion in a 1.5 nm-thick Pd film by ionic gating

Gate-induced modulation of the spin-orbit interaction (SOI) in a 1.5 nm-thick Pd thin film grown on a ferrimagnetic insulator was investigated. Efficient charge accumulation by ionic gating enables a substantial upshift in the Fermi level of the Pd film, which was corroborated by suppression of the resistivity in the Pd. Electromotive forces arising from the inverse spin Hall effect in Pd under spin pumping were substantially modulated by the gating, in consequence of the modulation of the spin Hall conductivity of Pd as in an ultrathin Pt film. The same experiment using a thin Cu film, for which the band structure is largely different from Pd and Pt and its SOI is quite small, provides further results supporting our claim. The results obtained help in developing a holistic understanding of the gate-tunable SOI in solids and confirm a previous explanation of the significant modulation of the spin Hall conductivity in an ultrathin Pt film by gating.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Spin transport in a lateral spin valve with a suspended Cu channel

We study spin transport through a suspended Cu channel by an electrical non-local 4-terminal measurement for future spin mechanics applications. A magnetoresistance due to spin transport through the suspended Cu channel is observed, and its magnitude is comparable to that of a conventional fixed Cu lateral spin valve. The spin diffusion length in the suspended Cu channel is estimated to be 340 nm at room temperature from the spin signal dependence on the distance between the ferromagnetic injector and detector electrodes. This value is found to be slightly shorter than in a fixed Cu. The decrease in the spin diffusion length in the suspended Cu channel is attributed to an increase in spin scattering originating from naturally oxidized Cu at the bottom of the Cu channel.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Transport and spin conversion of multi-carriers in semimetal bismuth

In this paper, we report on the investigation of (1) the transport properties of multi-carriers in semi-metal Bi and (2) the spin conversion physics in this semimetal system in a ferrimagnetic insulator, yttrium-iron-garnet. Hall measurements reveal that electrons and holes co-exist in the Bi, with electrons being the dominant carrier. The results of a spin conversion experiment corroborate the results of the Hall measurement; in addition, the inverse spin Hall effect governs the spin conversion in the semimetal/insulator system. This study provides further insights into spin conversion physics in semimetal systems.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

An experimental demonstration of room-temperature spin transport in n-type Germanium epilayers

We report the first experimental demonstration of room-temperature spin transport in n-type Ge epilayers grown on a Si(001) substrate. By utilizing spin pumping under ferromagnetic resonance, which inherently endows a spin battery function for semiconductors connected with the ferromagnet, a pure spin current is generated in the n-Ge at room temperature. The pure spin current is detected by using the inverse spin Hall effect of either Pt or Pd electrode on the n-Ge. A theoretical model including a geometrical contribution allows to estimate a spin diffusion length in n-Ge at room temperature to be 660 nm. The temperature dependence of the spin relaxation time provides evidence for Elliott-Yafet spin relaxation mechanism.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Spin transport and spin conversion in compound semiconductor with non-negligible spin-orbit interaction

A quantitative investigation of spin-pumping-induced spin-transport in n-GaAs was conducted at room temperature (RT). GaAs has a non-negligible spin orbit interaction, so that electromotive force due to the inverse spin Hall effect (ISHE) of GaAs contributed to the electromotive force detected with a platinum (Pt) spin detector. The electromotive force detected by the Pt spin detector had opposite polarity to that measured with a Ni80Fe20/GaAs bilayer due to the opposite direction of spin current flow, which demonstrates successful spin transport in the n-GaAs channel. A two-dimensional spin-diffusion model that considers the ISHE in the n-GaAs channel reveals an accurate spin diffusion length of t_s = 1.09 um in n-GaAs (NSi = 4x10^16 cm-3) at RT, which is approximately half that estimated by the conventional model.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Observation of spin-charge conversion in CVD-grown single-layer graphene

Conversion of pure spin current to charge current in single-layer graphene (SLG) is investigated by using spin pumping. Large-area SLG grown by chemical vapor deposition is used for the conversion. Efficient spin accumulation in SLG by spin pumping enables observing an electromotive force produced by the inverse spin Hall effect (ISHE) of SLG. The spin Hall angle of SLG is estimated to be 6.1*10-7. The observed ISHE in SLG is ascribed to its non-negligible spin-orbit interaction in SLG.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Self-induced inverse spin Hall effect in permalloy at room temperature

Inverse spin Hall effect (ISHE) allows the conversion of pure spin current into charge current in nonmagnetic materials (NM) due to spin-orbit interaction (SOI). In ferromagnetic materials (FM), SOI is known to contribute to anomalous Hall effect (AHE), anisotropic magnetoresistance (AMR), and other spin-dependent transport phenomena. However, SOI in FM has been ignored in ISHE studies in spintronic devices, and the possibility of "self-induced ISHE" in FM has never been explored until now. In this paper, we demonstrate the experimental verification of ISHE in FM. We found that the spin-pumping-induced spin current in permalloy (Py) film generates a transverse electromotive force (EMF) in the film itself, which results from the coupling of spin current and SOI in Py. The control experiments ruled out spin rectification effect and anomalous Nernst effect as the origin of the EMF.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Spin Drift in Highly Doped n-type Si

A quantitative estimation of spin drift velocity in highly doped n-type silicon (Si) at 8 K is presented in this letter. A local two-terminal Hanle measurement enables the detection of a modulation of spin signals from the Si as a function of an external electric field, and this modulation is analyzed by using a spin drift-diffusion equation and an analytical solution of the Hanle-type spin precession. The analyses reveal that the spin drift velocity is linearly proportional to the electric field. The contribution of the spin drift effect to the spin signals is crosschecked by introducing a modified nonlocal four-terminal method.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Bipolar-Driven Large Magnetoresistance in Silicon

Large linear magnetoresistance (MR) in electron-injected p-type silicon at very low magnetic field is observed experimentally at room temperature. The large linear MR is induced in electron-dominated space-charge transport regime, where the magnetic field modulation of electron-to-hole density ratio controls the MR, as indicated by the magnetic field dependence of Hall coefficient in the silicon device. Contrary to the space-charge-induced MR effect in unipolar silicon device, where the large linear MR is inhomogeneity-induced, our results provide a different insight into the mechanism of large linear MR in non-magnetic semiconductors that is not based on the inhomogeneity model. This approach enables homogeneous semiconductors to exhibit large linear MR at low magnetic fields that until now has only been appearing in semiconductors with strong inhomogeneities.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Spin-pumping-induced spin transport in p-type Si at room temperature

A spin battery concept is applied for the dynamical generation of pure spin current and spin transport in p-type silicon (p-Si). Ferromagnetic resonance and effective s-d coupling in Ni80Fe20 results in spin accumulation at the Ni80Fe20/p-Si interface, inducing spin injection and the generation of spin current in the p-Si. The pure spin current is converted to a charge current by the inverse spin Hall effect of Pd evaporated onto the p-Si. This approach demonstrates the generation and transport of pure spin current in p-Si at room temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Temperature Dependence of Spin Hall Angle of Palladium

In this study, the temperature dependence of the spin Hall angle of palladium (Pd) was experimentally investigated by spin pumping. A Ni80Fe20/Pd bilayer thin film was prepared, and a pure spin current was dynamically injected into the Pd layer. This caused the conversion of the spin current to a charge current owing to the inverse spin Hall effect. It was found that the spin Hall angle varies as a function of temperature, whereby the value of the spin Hall angle increases to ca. 0.02 at 123 K.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Vertical Spin Transport in Al with Pd/Al/Ni80Fe20 Trilayer Films at Room Temperature by Spin Pumping

Spin pumping enables the vertical transport of pure spin current through Al in a Pd/Al/Ni80Fe20(Py) trilayer film, in which the Py acts as a spin battery. The spin current injected into the Al flows through the Al to reach the Pd, resulting in the generation of electromotive forces due to the inverse spin Hall effect in the Pd. The electromotive forces decreased with increasing thickness of the Al layer. A simple model based on the theory by Tserkovnyak et al., [Phys. Rev. B, 66, 224403 (2002)] allows an estimation of the spin coherence of the perpendicular spin transport in the Al of 61 nm. This comparatively short coherence is attributed to a reduction in spin pumping efficiency because of the roughness of the Al/Py interface.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Observation of Huge Magnetoresistance and Multiferroic-like Behavior of Co Nanoparticles in a C60 matrix

Tunneling magnetoresistance (TMR) via oxides or molecules includes fruitful physics, such as spin filtering and hybridized interface states, in addition to various practical applications using large TMR ratio at room temperature. Then, a larger TMR effect with a new fundamental physics is awaited because further progress on spintronics can be realized. Here we report a discovery of a gigantic TMR ratio of 1,400,000% in a C60-Co nanocomposite spin device. The observed effect is induced by a combination of a Coulomb blockade effect and a novel magnetic switching effect. Theoretical investigation reveals that an electric field and a magnetic field control the magnetization and the electronic charging state, respectively, of the Co nanoparticles as in physics of multiferroicity.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Experimental Investigation of Spin Transport Properties in Silicon by Using a Non-local Geometry

A systematic investigation of spin transport properties in silicon at 8 K by using a non-local geometry is presented. The spin injection signal in the non-local scheme is found to increase in proportion to the evolution of bias electric currents. Theoretical fittings using the Hanle-type spin precession signals reveal that the spin polarization of the transported spin in the Si is much less affected by the change in the bias electric current compared with a case of the other spin devices, which induces a unique bias dependence of the spin signals.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

The effect of spin drift on spin accumulation voltages in highly-doped Si

An investigation was carried out into the effect of spin drift on spin accumulation signals in highly-doped Si using non-local 4-terminal (NL-4T) and 3-terminal (NL-3T) methods. The spin signals in the NL-4T scheme were not affected by spin drift, and the bias dependence was governed by whether spins were injected into or extracted from the Si channel. In contrast, the spin signal was strongly modulated by the bias electric field in the NL-3T scheme. The bias electric field dependence of the spin signals in the NL-3T method was quantitatively clarified using the spin drift-diffusion equation, and the results can be reasonably explained.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Analysis of Degradation in Graphene-based Spin Valves

The degradation mechanisms of multilayer graphene spin valves are investigated. The spin injection signals in graphene spin valves have been reported to be linearly dependent on the drain bias voltage, which indicates that the spin polarization of injected spins in graphene is robust against the bias voltage. We present that the disappearance of this robustness is due to two different degradation mechanisms of the spin valves. Our findings indicate that the disappearance of the robustness is due to degradation rather than an intrinsic characteristic of graphene. Thus, the robustness can be greatly enhanced if degradation can be prevented.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Voltage-assisted Magnetization Switching in Ultrathin Fe80Co20 Alloy Layers

Growing demands for the voltage-driven spintronic applications with ultralow-power consumption have led to new interest in exploring the voltage-induced magnetization switching in ferromagnetic metals. In this study, we observed a large perpendicular magnetic anisotropy change in Au(001) / ultrathin Fe80Co20(001) / MgO(001) / Polyimide / ITO junctions, and succeeded in realizing a clear switching of magnetic easy axis between in-plane and perpendicular directions. Furthermore, employing a perpendicularly magnetized film, voltage-induced magnetization switching in the perpendicular direction under the assistance of magnetic fields was demonstrated. These pioneering results may open a new window of electric-field controlled spintronics devices.

0 citations0 reviewsNo code linkedOpen access