BZPEERReading, trust and collaboration for research
Menu

Discover

GraphFollow connections around a paper, topic or saved view.

Workspaces

HomePick up where your research flow left off.InboxHandle requests, replies and notifications from one place.CollectionsCurate reading lists, evidence sets and shareable dossiers.ResearchSee your private provenance graph, trail and imports.CollaborationMove from discovery into focused discussion rooms.PublishDraft, preview and publish full-text research articles.

Network

ExpertsFind specialists worth following or asking for help.CommunitiesJoin research circles organized around shared work.PartnersSee external organizations active around the same topics.

Opportunities

ListingsBrowse roles, calls and collaborations with clearer fit signals.

Account

Log inReturn to your reading and collaboration workspace.Create accountStart saving work, following people and joining teams.
Log inCreate account

Researcher profile

Masashi Shiraishi

Masashi Shiraishi contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallphysics.app-ph

Trust snapshot

Quick read

Trust 21 - EmergingVerification L1Unclaimed author
8works
0followers
3topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

8 published item(s)

preprint2020arXiv

Modulation of spin conversion in a 1.5 nm-thick Pd film by ionic gating

Gate-induced modulation of the spin-orbit interaction (SOI) in a 1.5 nm-thick Pd thin film grown on a ferrimagnetic insulator was investigated. Efficient charge accumulation by ionic gating enables a substantial upshift in the Fermi level of the Pd film, which was corroborated by suppression of the resistivity in the Pd. Electromotive forces arising from the inverse spin Hall effect in Pd under spin pumping were substantially modulated by the gating, in consequence of the modulation of the spin Hall conductivity of Pd as in an ultrathin Pt film. The same experiment using a thin Cu film, for which the band structure is largely different from Pd and Pt and its SOI is quite small, provides further results supporting our claim. The results obtained help in developing a holistic understanding of the gate-tunable SOI in solids and confirm a previous explanation of the significant modulation of the spin Hall conductivity in an ultrathin Pt film by gating.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Optical visualization of the enhanced spin Hall effect in bismuth doped silicon

Direct visualizations of spin accumulation due to the enhanced spin Hall effect (SHE) in bismuth (Bi) - doped silicon (Si) at room temperature are realized by using helicity-dependent photovoltage (HDP) measurements. Under application of a dc current to the Bi-doped Si, clear helicity-dependent photovoltages are detected at the edges of the Si channel, indicating a perpendicular spin accumulation due to the SHE. In contrast, the HDP signals are negligibly small for phosphorus-doped Si. Compared to a platinum channel, which has a large spin Hall angle, more than two-orders of magnitude larger HDP signals are obtained in the Bi-doped Si.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Spin transport in a lateral spin valve with a suspended Cu channel

We study spin transport through a suspended Cu channel by an electrical non-local 4-terminal measurement for future spin mechanics applications. A magnetoresistance due to spin transport through the suspended Cu channel is observed, and its magnitude is comparable to that of a conventional fixed Cu lateral spin valve. The spin diffusion length in the suspended Cu channel is estimated to be 340 nm at room temperature from the spin signal dependence on the distance between the ferromagnetic injector and detector electrodes. This value is found to be slightly shorter than in a fixed Cu. The decrease in the spin diffusion length in the suspended Cu channel is attributed to an increase in spin scattering originating from naturally oxidized Cu at the bottom of the Cu channel.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Investigation of gating effect in Si spin MOSFET

A gate voltage application in a Si-based spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) modulates spin accumulation voltages, where both electrical conductivity and drift velocity are modified while keeping constant electric current. An unprecedented reduction in the spin accumulation voltages in a Si spin MOSFET under negative gate voltage applications is observed in a high electric bias current regime. To support our claim, the electric bias current dependence of the spin accumulation voltage under the gate voltage applications is investigated in detail and compared to a spin drift diffusion model including the conductance mismatch effect. We proved that the drastic decrease of the mobility and spin lifetime in the Si channel is due to the optical phonon emission at the high electric bias current, which consequently reduced the spin accumulation voltage.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Spin-pumping-induced spin transport in p-type Si at room temperature

A spin battery concept is applied for the dynamical generation of pure spin current and spin transport in p-type silicon (p-Si). Ferromagnetic resonance and effective s-d coupling in Ni80Fe20 results in spin accumulation at the Ni80Fe20/p-Si interface, inducing spin injection and the generation of spin current in the p-Si. The pure spin current is converted to a charge current by the inverse spin Hall effect of Pd evaporated onto the p-Si. This approach demonstrates the generation and transport of pure spin current in p-Si at room temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Observation of Huge Magnetoresistance and Multiferroic-like Behavior of Co Nanoparticles in a C60 matrix

Tunneling magnetoresistance (TMR) via oxides or molecules includes fruitful physics, such as spin filtering and hybridized interface states, in addition to various practical applications using large TMR ratio at room temperature. Then, a larger TMR effect with a new fundamental physics is awaited because further progress on spintronics can be realized. Here we report a discovery of a gigantic TMR ratio of 1,400,000% in a C60-Co nanocomposite spin device. The observed effect is induced by a combination of a Coulomb blockade effect and a novel magnetic switching effect. Theoretical investigation reveals that an electric field and a magnetic field control the magnetization and the electronic charging state, respectively, of the Co nanoparticles as in physics of multiferroicity.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Experimental Investigation of Spin Transport Properties in Silicon by Using a Non-local Geometry

A systematic investigation of spin transport properties in silicon at 8 K by using a non-local geometry is presented. The spin injection signal in the non-local scheme is found to increase in proportion to the evolution of bias electric currents. Theoretical fittings using the Hanle-type spin precession signals reveal that the spin polarization of the transported spin in the Si is much less affected by the change in the bias electric current compared with a case of the other spin devices, which induces a unique bias dependence of the spin signals.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Graphene: Piecing it together

Graphene has a multitude of striking properties that make it an exceedingly attractive material for various applications, many of which will emerge over the next decade. However, one of the most promising applications lie in exploiting its peculiar electronic properties which are governed by its electrons obeying a linear dispersion relation. This leads to the observation of half integer quantum hall effect and the absence of localization. The latter is attractive for graphene-based field effect transistors. However, if graphene is to be the material for future electronics, then significant hurdles need to be surmounted, namely, it needs to be mass produced in an economically viable manner and be of high crystalline quality with no or virtually no defects or grains boundaries. Moreover, it will need to be processable with atomic precision. Hence, the future of graphene as a material for electronic based devices will depend heavily on our ability to piece graphene together as a single crystal and define its edges with atomic precision. In this progress report, the properties of graphene that make it so attractive as a material for electronics is introduced to the reader. The focus then centers on current synthesis strategies for graphene and their weaknesses in terms of electronics applications are highlighted.

0 citations0 reviewsNo code linkedOpen access