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Source author record

Eiji Shikoh

Eiji Shikoh appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallphysics.app-phquant-ph

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Published work

14 published item(s)

preprint2022arXiv

Glass-patternable notch-shaped microwave architecture for on-chip spin detection in biological samples

We report a notch-shaped coplanar microwave waveguide antenna on a glass plate designed for on-chip detection of optically detected magnetic resonance (ODMR) of fluorescent nanodiamonds (NDs). A lithographically patterned thin wire at the center of the notch area in the coplanar waveguide realizes a millimeter-scale ODMR detection area (1.5 x 2.0 mm^2) and gigahertz-broadband characteristics with low reflection (about 8%). The ODMR signal intensity in the detection area is quantitatively predictable by numerical simulation. Using this chip device, we demonstrate a uniform ODMR signal intensity over the detection area for cells, tissue, and worms. The present demonstration of a chip-based microwave architecture will enable scalable chip integration of ODMR-based quantum sensing technology into various bioassay platforms.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Electromotive forces generated in 3d-transition ferromagnetic metal films themselves under their ferromagnetic resonance

We report the electromotive force (EMF) properties generated in 3d-transition ferromagnetic metal (FM = Fe, Co, and Ni80Fe20) films themselves under their ferromagnetic resonance (FMR). For Fe and Co films, the EMF due to the anomalous-Hall effect is dominantly generated under their FMR. Meanwhile, for a Ni80Fe20 film, the EMF due to the inverse spin-Hall effect in the Ni80Fe20 film itself under the FMR is mainly generated. This tendency is qualitatively explained with differences of the spin polarization, the spin Hall conductivity, the anomalous Hall conductivity, the magnetization saturation, and the resistivity of the FM films.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Transport and spin conversion of multi-carriers in semimetal bismuth

In this paper, we report on the investigation of (1) the transport properties of multi-carriers in semi-metal Bi and (2) the spin conversion physics in this semimetal system in a ferrimagnetic insulator, yttrium-iron-garnet. Hall measurements reveal that electrons and holes co-exist in the Bi, with electrons being the dominant carrier. The results of a spin conversion experiment corroborate the results of the Hall measurement; in addition, the inverse spin Hall effect governs the spin conversion in the semimetal/insulator system. This study provides further insights into spin conversion physics in semimetal systems.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Spin-pump-induced spin transport in a thermally-evaporated pentacene film

We report the spin-pump-induced spin transport properties of a pentacene film prepared by thermal evaporation. In a palladium(Pd)/pentacene/Ni80Fe20 tri-layer sample, a pure spin-current is generated in the pentacene layer by the spin-pumping of Ni80Fe20, which is independent of the conductance mismatch problem in spin injection. The spin current is absorbed into the Pd layer, converted into a charge current with the inverse spin-Hall effect in Pd, and detected as an electromotive force. This is clear evidence for the pure spin current at room temperature in pentacene films prepared by thermal evaporation.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Self-induced inverse spin Hall effect in permalloy at room temperature

Inverse spin Hall effect (ISHE) allows the conversion of pure spin current into charge current in nonmagnetic materials (NM) due to spin-orbit interaction (SOI). In ferromagnetic materials (FM), SOI is known to contribute to anomalous Hall effect (AHE), anisotropic magnetoresistance (AMR), and other spin-dependent transport phenomena. However, SOI in FM has been ignored in ISHE studies in spintronic devices, and the possibility of "self-induced ISHE" in FM has never been explored until now. In this paper, we demonstrate the experimental verification of ISHE in FM. We found that the spin-pumping-induced spin current in permalloy (Py) film generates a transverse electromotive force (EMF) in the film itself, which results from the coupling of spin current and SOI in Py. The control experiments ruled out spin rectification effect and anomalous Nernst effect as the origin of the EMF.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Spin pumping using an Ni80Fe20 thin film annealed in a magnetic field

Spin pumping controlled with the ferromagnetic resonance of an Ni80Fe20 thin film annealed in a magnetic field was performed in order to investigate the simple and efficient generation method of the pure spin current. At the spin-pumping using the Ni80Fe20 on an annealed Pd/Ni80Fe20 stacked structure, the electromotive force due to the inverse spin-Hall effect (ISHE) in the Pd was found to be 30% stronger than that without annealing. When the angle between the directions of localized magnetic moments in the Ni80Fe20 film and the external magnetic field in the spin-pumping is zero, the spin injection efficiency into the Pd layer, i.e., the spin current density generated in the Pd layer can be the maximum. The annealing in a magnetic field is a convenient technique for increasing the spin current density generated by the spin pumping.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Bipolar-Driven Large Magnetoresistance in Silicon

Large linear magnetoresistance (MR) in electron-injected p-type silicon at very low magnetic field is observed experimentally at room temperature. The large linear MR is induced in electron-dominated space-charge transport regime, where the magnetic field modulation of electron-to-hole density ratio controls the MR, as indicated by the magnetic field dependence of Hall coefficient in the silicon device. Contrary to the space-charge-induced MR effect in unipolar silicon device, where the large linear MR is inhomogeneity-induced, our results provide a different insight into the mechanism of large linear MR in non-magnetic semiconductors that is not based on the inhomogeneity model. This approach enables homogeneous semiconductors to exhibit large linear MR at low magnetic fields that until now has only been appearing in semiconductors with strong inhomogeneities.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Spin-pumping-induced spin transport in p-type Si at room temperature

A spin battery concept is applied for the dynamical generation of pure spin current and spin transport in p-type silicon (p-Si). Ferromagnetic resonance and effective s-d coupling in Ni80Fe20 results in spin accumulation at the Ni80Fe20/p-Si interface, inducing spin injection and the generation of spin current in the p-Si. The pure spin current is converted to a charge current by the inverse spin Hall effect of Pd evaporated onto the p-Si. This approach demonstrates the generation and transport of pure spin current in p-Si at room temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Temperature Dependence of Spin Hall Angle of Palladium

In this study, the temperature dependence of the spin Hall angle of palladium (Pd) was experimentally investigated by spin pumping. A Ni80Fe20/Pd bilayer thin film was prepared, and a pure spin current was dynamically injected into the Pd layer. This caused the conversion of the spin current to a charge current owing to the inverse spin Hall effect. It was found that the spin Hall angle varies as a function of temperature, whereby the value of the spin Hall angle increases to ca. 0.02 at 123 K.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Vertical Spin Transport in Al with Pd/Al/Ni80Fe20 Trilayer Films at Room Temperature by Spin Pumping

Spin pumping enables the vertical transport of pure spin current through Al in a Pd/Al/Ni80Fe20(Py) trilayer film, in which the Py acts as a spin battery. The spin current injected into the Al flows through the Al to reach the Pd, resulting in the generation of electromotive forces due to the inverse spin Hall effect in the Pd. The electromotive forces decreased with increasing thickness of the Al layer. A simple model based on the theory by Tserkovnyak et al., [Phys. Rev. B, 66, 224403 (2002)] allows an estimation of the spin coherence of the perpendicular spin transport in the Al of 61 nm. This comparatively short coherence is attributed to a reduction in spin pumping efficiency because of the roughness of the Al/Py interface.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

An investigation of the inverted Hanle effect in highly-doped Si

The underlying physics of the inverted Hanle effect appearing in Si was experimentally investigated using a Si spin valve, where spin transport was realized up to room temperature. No inverted-Hanle-related signal was observed in a non-local 4-terminal scheme even the same ferromagnetic electrode was used, whereas the signal was detected in a non-local 3-terminal scheme. Although the origin of the inverted Hanle effect has been thought to be ascribed to interfacial roughness beneath a ferromagnetic electrode, our finding is inconsistent with the conventional interpretation. More importantly, we report that there were two different Hanle signals in a non-local 3-terminal scheme, one of which corresponds to the inverted Hanle signal but the other is ascribed to spin transport. These results strongly suggest that (1) there is room for discussion concerning the origin of the inverted Hanle effect, and (2) achievement of spin transport in a non-local 4-terminal scheme is indispensable for further understanding of spin injection, spin transport and spin coherence in Si. Our new findings provide a new and strong platform for arising discussion of the physical essence of Hanle-related spin phenomena.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Observation of Huge Magnetoresistance and Multiferroic-like Behavior of Co Nanoparticles in a C60 matrix

Tunneling magnetoresistance (TMR) via oxides or molecules includes fruitful physics, such as spin filtering and hybridized interface states, in addition to various practical applications using large TMR ratio at room temperature. Then, a larger TMR effect with a new fundamental physics is awaited because further progress on spintronics can be realized. Here we report a discovery of a gigantic TMR ratio of 1,400,000% in a C60-Co nanocomposite spin device. The observed effect is induced by a combination of a Coulomb blockade effect and a novel magnetic switching effect. Theoretical investigation reveals that an electric field and a magnetic field control the magnetization and the electronic charging state, respectively, of the Co nanoparticles as in physics of multiferroicity.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Experimental Investigation of Spin Transport Properties in Silicon by Using a Non-local Geometry

A systematic investigation of spin transport properties in silicon at 8 K by using a non-local geometry is presented. The spin injection signal in the non-local scheme is found to increase in proportion to the evolution of bias electric currents. Theoretical fittings using the Hanle-type spin precession signals reveal that the spin polarization of the transported spin in the Si is much less affected by the change in the bias electric current compared with a case of the other spin devices, which induces a unique bias dependence of the spin signals.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

The effect of spin drift on spin accumulation voltages in highly-doped Si

An investigation was carried out into the effect of spin drift on spin accumulation signals in highly-doped Si using non-local 4-terminal (NL-4T) and 3-terminal (NL-3T) methods. The spin signals in the NL-4T scheme were not affected by spin drift, and the bias dependence was governed by whether spins were injected into or extracted from the Si channel. In contrast, the spin signal was strongly modulated by the bias electric field in the NL-3T scheme. The bias electric field dependence of the spin signals in the NL-3T method was quantitatively clarified using the spin drift-diffusion equation, and the results can be reasonably explained.

0 citations0 reviewsNo code linkedOpen access