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Teruo Ono

Teruo Ono appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.stat-mechcond-mat.othercond-mat.str-elcond-mat.supr-conphysics.opticsquant-ph

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Published work

25 published item(s)

preprint2022arXiv

Field-free superconducting diode effect in noncentrosymmetric superconductor/ferromagnet multilayers

The diode effect is fundamental to electronic devices and is widely used in rectifiers and AC-DC converters. At low temperatures, however, conventional semiconductor diodes possess a high resistivity, which yields energy loss and heating during operation. The superconducting diode effect (SDE), which relies on broken inversion symmetry in a superconductor may mitigate this obstacle: in one direction a zero-resistance supercurrent can flow through the diode, but for the opposite direction of current flow, the device enters the normal state with ohmic resistance. The application of a magnetic field can induce SDE in Nb/V/Ta superlattices with a polar structure, in superconducting devices with asymmetric patterning of pinning centres, or in superconductor/ferromagnet hybrid devices with induced vortices. The need for an external magnetic field limits their practical application. Recently, a field-free SDE was observed in a NbSe2/Nb3Br8/NbSe2 junction, and it originates from asymmetric Josephson tunneling that is induced by the Nb3Br8 barrier and the associated NbSe2/Nb3Br8 interfaces. Here, we present another implementation of zero-field SDE using noncentrosymmetric [Nb/V/Co/V/Ta]20 multilayers. The magnetic layers provide the necessary symmetry breaking and we can tune the SDE by adjusting the structural parameters, such as the constituent elements, film thickness, stacking order, and number of repetitions. We control the polarity of the SDE through the magnetization direction of the ferromagnetic layers. Artificially stacked structures, as the one used in this work, are of particular interest as they are compatible with microfabrication techniques and can be integrated with devices such as Josephson junctions. Energy-loss-free SDEs as presented in this work may therefore enable novel non-volatile memories and logic circuits with ultralow power consumption.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Efficient all-optical helicity dependent switching of spins in a Pt/Co/Pt film by a dual-pulse excitation

All-optical helicity dependent switching (AO-HDS), deterministic control of magnetization by circularly polarized laser pulses, allows to efficiently manipulate spins without the need of a magnetic field. However, AO-HDS in ferromagnetic metals so far requires many laser pulses for fully switching their magnetic states. Using a combination of a short, 90-fs linearly polarized pulse and a subsequent longer, 3-ps circularly polarized pulse, we demonstrate that the number of pulses for full magnetization reversal can be reduced to 4 pulse pairs in a single stack of Pt/Co/Pt. The obtained results suggest that the dual-pulse approach is a potential route towards realizing efficient AO-HDS in ferromagnetic metals.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Anomalous behavior of 1/f noise in graphene near the charge neutrality point

We investigate the noise in single layer graphene devices from equilibrium to far from equilibrium and found that the 1/f noise shows an anomalous dependence on the source-drain bias voltage (VSD). While the Hooge relation is not the case around the charge neutrality point, we found that it is recovered at very low VSD region. We propose that the depinning of the electron-hole puddles is induced at finite VSD, which may explain this anomalous noise behavior.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Giant modulation of the magnetic domain size induced by an electric field

The electric field (EF) effect on the magnetic domain structure of a Pt/Co system was studied, where an EF was applied to the top surface of the Co layer. The width of the maze domain was significantly modified by the application of the EF at a temperature slightly below the Curie temperature. After a detailed analysis, a change in the exchange stiffness induced by the EF application was suggested to dominate the modulation of the domain width observed in the experiment. The accumulation of electrons at the surface of the Co layer resulted in an increase of the exchange stiffness and the Curie temperature. The result was consistent with the recent theoretical prediction.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Snell's Law for Spin Waves

We report the experimental observation of Snell's law for magneto-static spin waves in thin ferromagnetic Permalloy films by imaging incident, refracted and reflected waves. We use a thickness step as the interface between two media with different dispersion relation. Since the dispersion relation for magneto-static waves in thin ferromagnetic films is anisotropic, deviations from the isotropic Snell's law known in optics are observed for incidence angles larger than 25\textdegree{} with respect to the interface normal between the two magnetic media. Furthermore, we can show that the thickness step modifies the wavelength and the amplitude of the incident waves. Our findings open up a new way of spin wave steering for magnonic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Anti-damping spin transfer torque through epitaxial Nickel oxide

We prepare the high quality epitaxial MgO(001)[100]/Pt(001)[100]/NiO(001)[100]/FeNi/SiO2 films to investigate the spin transport in the NiO antiferromagnetic insulator. The ferromagnetic resonance measurements of the FeNi under a spin current injection from the Pt by the spin Hall effect revealed the change of the ferromagnetic resonance linewidth depending on the amount of the spin current injection. The results can be interpreted that there is an angular momentum transfer through the NiO. A high efficient angular momentum transfer we observed in the epitaxial NiO can be attributed to the well-defined orientation of the antiferromagnetic moments and the spin quantization axis of the injected spin current.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Antiferromagnet-Mediated Spin Transfer Between Metal and Ferromagnet

We develop a theory for spin transported by coherent Neel dynamics through an antiferromagnetic insulator coupled to a ferromagnetic insulator on one side and a current-carrying normal metal with strong spin-orbit coupling on the other. The ferromagnet is considered within the mono-domain limit and we assume its coupling to the local antiferromagnet Neel order at the ferromagnet|antiferromagnet interface through exchange coupling. Coupling between the charge current and the local Neel order at the other interface is described using spin Hall phenomenology. Spin transport through the antiferromagnet, assumed to possess an easy-axis magnetic anisotropy, is solved within the adiabatic approximation and the effect of spin current flowing into the ferromagnet on its resonance linewidth is evaluated. Onsager reciprocity is used to evaluate the inverse spin Hall voltage generated across the metal by a dynamic ferromagnet as a function the antiferromagnet thickness.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Room temperature write-read operations in antiferromagnetic memory

B2-ordered FeRh has been known to exhibit antiferromagnetic-ferromagnetic (AF-F) phase transitions in the vicinity of room temperature. Manipulation of the Néel order via AF-F phase transition and recent experimental observation of the anisotropic magnetoresistance in antiferromagnetic FeRh has proven that FeRh is a promising candidate for antiferromagnetic memory material. In this work, we demonstrate sequential write and read operations in antiferromagnetic memory resistors made of B2-orderd FeRh thin films by a magnetic field and electric current only. Our demonstration of writing and reading at ambient room temperature opens a realistic pathway towards operational antiferromagnetic memory devices.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Shot Noise Induced by Nonequilibrium Spin Accumulation

When an electric current passes across a potential barrier, the partition process of electrons at the barrier gives rise to the shot noise, reflecting the discrete nature of the electric charge. Here we report the observation of excess shot noise connected with a spin current which is induced by a nonequilibrium spin accumulation in an all-semiconductor lateral spin-valve device. We find that this excess shot noise is proportional to the spin current. Additionally, we determine quantitatively the spin-injection-induced electron temperature by measuring the current noise. Our experiments show that spin accumulation driven shot noise provides a novel means of investigating nonequilibrium spin transport.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Soliton-like magnetic domain wall motion induced by the interfacial Dzyaloshinskii-Moriya interaction

Topological defects such as magnetic solitons, vortices, Bloch lines, and skyrmions have started to play an important role in modern magnetism because of their extraordinary stability, which can be exploited in the production of memory devices. Recently, a novel type of antisymmetric exchange interaction, namely the Dzyaloshinskii-Moriya interaction (DMI), has been uncovered and found to influence the formation of topological defects. Exploring how the DMI affects the dynamics of topological defects is therefore an important task. Here we investigate the dynamic domain wall (DW) under a strong DMI and find that the DMI induces an annihilation of topological vertical Bloch lines (VBLs) by lifting the four-fold degeneracy of the VBL. As a result, velocity reduction originating from the Walker breakdown is completely suppressed, leading to a soliton-like constant velocity of the DW. Furthermore, the strength of the DMI, which is the key factor for soliton-like DW motion, can be quantified without any side effects possibly arising from current-induced torques or extrinsic pinnings in magnetic films. Our results therefore shed light on the physics of dynamic topological defects, which paves the way for future work in topology-based memory applications.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Experimental Proof of Universal Conductance Fluctuation in Quasi-1D Epitaxial Bi$_{2}$Se$_{3}$ Wires

We report on conductance fluctuation in quasi-one-dimensional wires made of epitaxial Bi$_{2}$Se$_{3}$ thin film. We found that this type of fluctuation decreases as the wire length becomes longer and that the amplitude of the fluctuation is well scaled to the coherence, thermal diffusion, and wire lengths, as predicted by conventional universal conductance fluctuation (UCF) theory. Additionally, the amplitude of the fluctuation can be understood to be equivalent to the UCF amplitude of a system with strong spin-orbit interaction and no time-reversal symmetry. These results indicate that the conductance fluctuation in Bi$_{2}$Se$_{3}$ wires is explainable through UCF theory. This work is the first to verify the scaling relationship of UCF in a system with strong spin-orbit interaction.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Low-frequency and shot noises in CoFeB/MgO/CoFeB magnetic tunneling junctions

The low-frequency and shot noises in spin-valve CoFeB/MgO/CoFeB magnetic tunneling junctions were studied at low temperature. The measured 1/f noise around the magnetic hysteresis loops of the free layer indicates that the main origin of the 1/f noise is the magnetic fluctuation, which is discussed in terms of a fluctuation-dissipation relation. Random telegraph noise (RTN) is observed to be symmetrically enhanced in the hysteresis loop with regard to the two magnetic configurations. We found that this enhancement is caused by the fluctuation between two magnetic states in the free layer. Although the 1/f noise is almost independent of the magnetic configuration, the RTN is enhanced in the antiparallel configuration. These findings indicate the presence of spin-dependent activation of RTN. Shot noise reveals the spin-dependent coherent tunneling process via a crystalline MgO barrier.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Observation of finite excess noise in the voltage-biased quantum Hall regime as a precursor for breakdown

We performed noise measurements in a two-dimensional electron gas to investigate the nonequilibrium quantum Hall effect (QHE) state. While excess noise is perfectly suppressed around the zero-biased QHE state reflecting the dissipationless electron transport of the QHE state, considerable finite excess noise is observed in the breakdown regime of the QHE. The noise temperature deduced from the excess noise is found to be of the same order as the energy gap between the highest occupied Landau level and the lowest empty one. Moreover, unexpected finite excess noise is observed at a finite source-drain bias voltagesmaller than the onset voltage of the QHE breakdown, which indicates finite dissipation in the QHE state and may be related to the prebreakdown of the QHE.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Shot Noise Induced by Electron-nuclear Spin-flip Scattering in a Nonequilibrium Quantum Wire

We study the shot noise (nonequilibrium current fluctuation) associated with dynamic nuclear polarization in a nonequilibrium quantum wire (QW) fabricated in a two-dimensional electron gas. We observe that the spin-polarized conductance quantization of the QW in the integer quantum Hall regime collapses when the QW is voltage biased to be driven to nonequilibrium. By measuring the shot noise, we prove that the spin polarization of electrons in the QW is reduced to $\sim 0.7$ instead of unity as a result of electron-nuclear spin-flip scattering. The result is supported by Knight shift measurements of the QW using resistively detected NMR.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Shot noise suppression in InGaAs/InGaAsP quantum channels

We have measured the shot noise in a quantum point contact (QPC) fabricated by using InGaAs/InGaAsP heterostructure, whose conductance can be electrically tuned by the gate voltages. The reduced shot noise is observed when the QPC conductance equals to N(2e^2/h) (N=4, 5, and 6), which is the direct experimental evidence of the coherent quantized channel formation in the QPC. The deviation of the observed Fano factor from the theory is explained by the electron heating effect generated at the QPC.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Signature of Coherent Transport in Epitaxial Spinel-based Magnetic Tunnel Junctions Probed by Shot Noise Measurement

We measured the shot noise in fully epitaxial Fe/MgAl2OX/Fe-based magnetic tunneling junctions (MTJs). While the Fano factor to characterize the shot noise is very close to unity in the antiparallel configuration, it is reduced to 0.98 in the parallel configuration. This observation shows the sub-Poissonian process of electron tunneling in the parallel configuration, indicating the coherent tunneling through the spinel-based tunneling barrier of the MTJ.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Weak Antilocalization and Conductance Fluctuation in a Sub-micrometer-sized Wire of Epitaxial Bi2Se3

In this study, we address the phase coherent transport in a sub-micrometer-sized Hall bar made of epitaxial Bi2Se3 thin film by probing the weak antilocalization (WAL) and the magnetoresistance fluctuation below 22 K. The WAL effect is well described by the Hikami-Larkin-Nagaoka model, where the temperature dependence of the coherence length indicates that electron conduction occurs quasi-one-dimensionally in the narrow Hall bar. The temperature-dependent magnetoresistance fluctuation is analyzed in terms of the universal conductance fluctuation, which gives a coherence length consistent with that derived from the WAL effect.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Evolution of the Kondo Effect in a Quantum Dot Probed by the Shot Noise

We measure the current and shot noise in a quantum dot (QD) in the Kondo regime to address the non-equilibrium properties of the Kondo effect. By systematically tuning the temperature and gate voltages to define the level positions in the QD, we observe an enhancement of the shot noise as temperature decreases below the Kondo temperature, which indicates that the two-particle scattering process grows as the Kondo state evolves. Below the Kondo temperature, the Fano factor defined at finite temperature is found to exceed the expected value of unity from the non-interacting model, reaching $1.8 \pm 0.2$.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Fluctuation Theorem and Microreversibility in a Quantum Coherent Conductor

Mesoscopic systems provide us a unique experimental stage to address non-equilibrium quantum statistical physics. By using a simple tunneling model, we describe the electron exchange process via a quantum coherent conductor between two reservoirs, which yields the fluctuation theorem (FT) in mesoscopic transport. We experimentally show that such a treatment is semi-quantitatively validated in the current and noise measurement in an Aharonov-Bohm ring. The experimental proof of the microreversibility assumed in the derivation of FT is presented.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Sub-Poissonian shot noise in CoFeB/MgO/CoFeB-based magnetic tunneling junctions

We measured the shot noise in the CoFeB/MgO/CoFeB-based magnetic tunneling junctions with a high tunneling magnetoresistance ratio (over 200% at 3 K). Although the Fano factor in the anti-parallel configuration is close to unity, it is observed to be typically 0.91\pm0.01 in the parallel configuration. It indicates the sub-Poissonian process of the electron tunneling in the parallel configuration due to the relevance of the spin-dependent coherent transport in the low bias regime.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Non-equilibrium Fluctuation Relations in a Quantum Coherent Conductor

We experimentally demonstrate the validity of non-equilibrium fluctuation relations by using a quantum coherent conductor. In equilibrium the fluctuation-dissipation relation leads to the correlation between current and current noise at the conductor, namely, Johnson-Nyqusit relation. When the conductor is voltage-biased so that the non-linear regime is entered, the fluctuation theorem has predicted similar non-equilibrium fluctuation relations, which hold true even when the Onsager-Casmir relations are broken in magnetic fields. Our experiments qualitatively validate the predictions as the first evidence of this theorem in the non-equilibrium quantum regime. In the appendix, we give simple deduction of the higher order correlations between the current and the current noise based on the fluctuation theorem.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Temperature dependence of the visibility in an electronic Mach-Zehnder interferometer

We performed the conductance and the shot noise measurements in an electronic Mach-Zehnder interferometer. The visibility of the interference is investigated as a function of the electron temperature that is derived from the thermal noise of the interferometer. The non-equilibrium noise displays both h/e and h/2e oscillations vs. the modulation gate voltage.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Control of Domain Wall Position by Electrical Current in Structured Co/Ni Wire with Perpendicular Magnetic Anisotropy

We report the direct observation of the current-driven domain wall (DW) motion by magnetic force microscopy in a structured Co/Ni wire with perpendicular magnetic anisotropy. The wire has notches to define the DW position. It is demonstrated that single current pulses can precisely control the DW position from notch to notch with high DW velocity of 40 m/s.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Electrical switching of vortex core in a magnetic disk

A magnetic vortex is a curling magnetic structure realized in a ferromagnetic disk, which is a promising candidate of a memory cell for future nonvolatile data storage devices. Thus, understanding of the stability and dynamical behaviour of the magnetic vortex is a major requirement for developing magnetic data storage technology. Since the experimental proof of the existence of a nanometre-scale core with out-of-plane magnetisation in the magnetic vortex, the dynamics of a vortex has been investigated intensively. However, the way to electrically control the core magnetisation, which is a key for constructing a vortex core memory, has been lacking. Here, we demonstrate the electrical switching of the core magnetisation by utilizing the current-driven resonant dynamics of the vortex; the core switching is triggered by a strong dynamic field which is produced locally by a rotational core motion at a high speed of several hundred m/s. Efficient switching of the vortex core without magnetic field application is achieved thanks to resonance. This opens up the potentiality of a simple magnetic disk as a building block for spintronic devices like a memory cell where the bit data is stored as the direction of the nanometre-scale core magnetisation.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Microscopic Characterization of the L10-FePt Nanoparticles Synthesized by the SiO2-Nanoreactor Method

We investigated magnetic properties of the L10-FePt nanoparticles synthesized by the SiO2-nanoreactor method by means of Moessbauer spectroscopy from the microscopic point of view. Almost all of the nanoparticles were revealed to have nearly the same Moessbauer hyperfine parameters as those of the bulk L10-FePt alloy, indicating that they have well-defined L10 structure equivalent to the bulk state in spite of their small size of 6.5 nm.

0 citations0 reviewsNo code linkedOpen access