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Researcher profile

Tengfei Yan

Tengfei Yan contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elphysics.optics

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Published work

6 published item(s)

preprint2020arXiv

Many-body effect in optical properties of monolayer molybdenum diselenide

Excitons in monolayer transition metal dichalcogenide (TMD) provide a paradigm of composite Boson in 2D system. This letter reports a photoluminescence and reflectance study of excitons in monolayer molybdenum diselenide (MoSe2) with electrostatic gating. We observe the repulsive and attractive Fermi polaron modes of the band edge exciton, its excited state and the spin-off excitons. Our data validate the polaronic behavior of excitonic states in the system quantitatively where the simple three-particle trion model is insufficient to explain.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Exciton valley dynamics in monolayer WSe2 probed by the two-color ultrafast Kerr rotation

The newly developed two-dimensional layered materials provide perfect platform for valley-spintronics exploration. To determine the prospect of utilizing the valley degree of freedom, it is of great importance to directly detect and understand the valley dynamics in these materials. Here, the exciton valley dynamics in monolayer WSe$_2$ is investigated by the two-color pump-probe magneto-optical Kerr technique. By tuning the probe photon energy in resonance with the free excitons and trions, the valley relaxation time of different excitonic states in monolayer WSe$_2$ is determined. Valley relaxation time of the free exciton in monolayer WSe$_2$ is confirmed to be several picoseconds. A slow valley polarization relaxation process is observed to be associated with the trions, showing that the valley lifetime for trions is one order of magnitude longer than that of free excitons. This finding suggests that trion can be a good candidate for valleytronics application.

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preprint2015arXiv

Anomalous valley polarization in monolayer MoSe2

Modern electronic devices heavily rely on the accurate control of charge and spin of electrons. The emergence of controllable valley degree of freedom brings new possibilities and presents a promising prospect towards valleytronics. Recently, valley excitation selected by chiral optical pumping has been observed in monolayer MoS2. In this work, we report polarized photoluminescence (PL) measurements for monolayer MoSe2, another member of the family of transition-metal-dichalcogenides (MX2), and observe drastic difference from the outcomes of MoS2. In particular, we identify a valley polarization (VP) up to 70% for B exciton, while that for A exciton is less than 3%. Besides, we also find a small but finite negative VP for A- trion. These results reveal several new intra- and inter-valley scattering processes which significantly affect valley polarization, hence provide new insights into exciton physics in monolayer MX2 and possible valleytronic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Gate Tuning of High-Performance InSe-Based Photodetectors Using Graphene Electrodes

In order to increase the response speed of the InSe-based photodetector with high photoresponsivity, graphene is used as the transparent electrodes to modify the difference of the work function between the electrodes and the InSe. As expected, the response speed of InSe/graphene photodetectors is down to 120 μs, which is about 40 times faster than that of our InSe/metal device. And it can also be tuned by the back-gate voltage from 310 μs down to 100 μs. With high response speed, the photoresponsivity can reach as high as 60 AW-1 simultaneously. Meanwhile the InSe/graphene photodetectors possess a broad spectral range at 400-1000 nm. The design of 2D crystal/graphene electrical contacts could be important for high performance optoelectronic devices.

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preprint2015arXiv

Valley depolarization in monolayer WSe2

We have systematically examined the circular polarization of monolayer WSe2 at different temperature, excitation energy and exciton density. The valley depolarization in WSe2 is experimentally confirmed to be governed by the intervalley electron-hole exchange interaction. More importantly, a non-monotonic dependence of valley circular polarization on the excitation power density has been observed, providing the experimental evidence for the non-monotonic dependence of exciton intervalley scattering rate on the excited exciton density. The physical origination of our experimental observations has been proposed, which is in analogy to the D'yakonov-Perel' mechanism that is operative in conventional GaAs quantum well systems. Our experimental results are fundamentally important for well understanding the valley psudospin relaxation in atomically thin transition metal dichalcogenides.

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preprint2014arXiv

Strong enhancement of photoresponsivity with shrinking the electrodes spacing in few layer GaSe photodetectors

A critical challenge for the integration of the optoelectronics is that photodetectors have relatively poor sensitivities at the nanometer scale. It is generally believed that a large electrodes spacing in photodetectors is required to absorb sufficient light to maintain high photoresponsivity and reduce the dark current. However, this will limit the optoelectronic integration density. Through spatially resolved photocurrent investigation, we find that the photocurrent in metal-semiconductor-metal (MSM) photodetectors based on layered GaSe is mainly generated from the photoexcited carriers close to the metal-GaSe interface and the photocurrent active region is always close to the Schottky barrier with higher electrical potential. The photoresponsivity monotonically increases with shrinking the spacing distance before the direct tunneling happen, which was significantly enhanced up to 5,000 AW-1 for the bottom contacted device at bias voltage 8 V and wavelength of 410 nm. It is more than 1,700-fold improvement over the previously reported results. Besides the systematically experimental investigation of the dependence of the photoresponsivity on the spacing distance for both the bottom and top contacted MSM photodetectors, a theoretical model has also been developed to well explain the photoresponsivity for these two types of device configurations. Our findings realize shrinking the spacing distance and improving the performance of 2D semiconductor based MSM photodetectors simultaneously, which could pave the way for future high density integration of 2D semiconductor optoelectronics with high performances.

0 citations0 reviewsNo code linkedOpen access