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Tanja Westerkamp

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2 publications

preprint2013arXiv

Magnetization study of the energy scales in YbRh2_{2}Si2_{2} under chemical pressure

We present a systematic study of the magnetization in YbRh2_{2}Si2_{2} under slightly negative (6?% Ir substitution) and positive (7% Co substitution) chemical pressure. We show how the critical field H0H_{0}, associated with the high-field Lifshitz transitions, is shifted to lower (higher) values with Co (Ir) substitution. The critical field HNH_{\mathrm{N}}, which identifies the boundary line of the antiferromagnetic (AFM) phase TN(H)T_{\mathrm{N}}(H) increases with positive pressure and it approaches zero with 6% Ir substitution. On the other side, the crossover field H∗H^{*}, associated with the energy scale T∗(H)T^{*}(H) where a reconstruction of the Fermi surface has been observed, is not much influenced by the chemical substitution.}{Following the analysis proposed in Refs.\,\cite{Paschen2004,Gegenwart2007,Friedemann2009,Tokiwa2009a} we have fitted the quantity M~(H)=M+(dM/dH)H\tilde{M}(H)=M+(dM/dH)H with a crossover function to indentify H∗H^{*}. The T∗(H)T^{*}(H) line follows an almost linear HH-dependence at sufficiently high fields outside the AFM phase, but it deviates from linearity at T≤TN(0)T \le T_{\mathrm{N}}(0) and in Yb(Rh0.93_{0.93}Co0.07_{0.07})2_{2}Si2_{2} it changes slope clearly inside the AFM phase. Moreover, the FWHM of the fit function depends linearly on temperature outside the phase, but remains constant inside, suggesting either that such an analysis is valid only for T≥TN(0)T \ge T_{\mathrm{N}}(0) or that the Fermi surface changes continuously at T=0T = 0 inside the AFM phase.}}

preprint2011arXiv

Single crystal growth of YbRh2Si2 and YbIr2Si2

We report on the single crystal growth of the heavy-fermion compounds YbRh2Si2 and YbIr2Si2 using a high-temperature indium-flux technique. The optimization of the initial composition and the temperature-time profile lead to large (up to 100 mg) and clean (ρ_0=0.5 μΩcm) single crystals of YbRh2Si2. Low-temperature resistivity measurements revealed a sample dependent temperature exponent below 10 K, which for the samples with highest quality deviates from a linear-in-T behaviour. Furthermore, we grew single crystals of the alloy series Yb(Rh_(1-x)Ir_x)2Si2 with 0<x<0.23 and report the structural details. For pure YbIr2Si2, we establish the formation of two crystallographic modifications, where the magnetic 4f-electrons have different physical ground states.

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