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Researcher profile

Takayuki Muro

Takayuki Muro contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.supr-concond-mat.str-el

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Published work

4 published item(s)

preprint2022arXiv

Large anomalous Hall effect induced by weak ferromagnetism in the noncentrosymmetric antiferromagnet $\mathrm{Co}\mathrm{Nb}_3\mathrm{S}_6$

We study the mechanism of the exceptionally large anomalous Hall effect (AHE) in the noncentrosymmetric antiferromagnet $\mathrm{Co}\mathrm{Nb}_3\mathrm{S}_6$ by angle-resolved photoemission spectroscopy (ARPES) and magnetotransport measurements. From ARPES measurements of $\mathrm{Co}\mathrm{Nb}_3\mathrm{S}_6$ and its family compounds ($\mathrm{Fe}\mathrm{Nb}_3\mathrm{S}_6$ and $\mathrm{Ni}\mathrm{Nb}_3\mathrm{S}_6$), we find a band dispersion unique to the Co intercalation existing near the Fermi level. We further demonstrate that a slight deficiency of sulfur in $\mathrm{Co}\mathrm{Nb}_3\mathrm{S}_6$ eliminates the ferromagnetism and the AHE simultaneously while hardly changing the band structure, indicating that the weak ferromagnetism is responsible for the emergence of the large AHE. Based on our results, we propose Weyl points near the Fermi level to cause the large AHE.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Emergence of low-energy electronic states in oxygen-controlled Mott insulator Ca$_{2}$RuO$_{4+δ}$

Insulator-to-metal transition in Ca$_{2}$RuO$_{4}$ has drawn keen attention because of its sensitivity to various stimulation and its potential controllability. Here, we report a direct observation of Fermi surface, which emerges upon introducing excess oxygen into an insulating Ca$_{2}$RuO$_{4}$, by using angle-resolved photoemission spectroscopy. Comparison between energy distribution curves shows that the Mott insulating gap is closed by eV-scale spectral-weight transfer with excess oxygen. Momentum-space mapping exhibits two square-shaped sheets of the Fermi surface. One is a hole-like $α$ sheet around the corner of a tetragonal Brillouin zone, and the other is an electron-like $β$ sheet around the $Γ$ point. The electron occupancies of the $α$ and $β$ bands are determined to be $n_α=1.6$ and $n_β=0.6$, respectively. Our result indicates that the insulator-to-metal transition occurs selectively in $d_{xz}$ and $d_{yz}$ bands and not yet in $d_{xy}$ band. This orbital selectivity is most likely explained in terms of the energy level of $d_{xy}$, which is deeper for Ca$_{2}$RuO$_{4+δ}$ than for Ca$_{1.8}$Sr$_{0.2}$RuO$_{4}$. Consequently, we found substantial differences from the Fermi surface of other ruthenates, shedding light on a unique role of excess oxygen among the metallization methods of Ca$_{2}$RuO$_{4}$.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Signature of high Tc around 25K in higher quality heavily boron-doped diamond

Diamond has outstanding physical properties: the hardest known material, a wide band gap, the highest thermal conductivity, and a very high Debye temperature. In 2004, Ekimov et al. discovered that heavily boron-doped (B-doped) diamond becomes a superconductor around 4 K. Our group successfully controlled the boron concentration and synthesized homoepitaxially grown superconducting diamond films by a CVD method. By CVD method, we found that superconductivity appears when the boron concentration (nB) exceeds a metal-insulator transition concentration of 3.0x10^20 cm^-3 and its Tczero increases up to 7.4 K with increasing nB. We additionally elucidated that the holes formed at the valence band are responsible for the metallic states leading to superconductivity. The calculations predicted that the hole doping into the valence band induces strong attractive interaction and a rapid increase in Tc with increasing boron concentration. According to the calculations, if substitutional doped boron could be arranged periodically or the degree of disorder is reduced, a Tc of approximately 100 K could be achieved via minimal percent doping. In this work, we have successfully observed zero resistivity above 10 K and an onset of resistivity reduction at 25.2 K in heavily B-doped diamond film. However, the effective carrier concentration is similar to that of superconducting diamond with a lower Tc. We found that the carrier has a longer mean free path and lifetime than previously reported, indicating that this highest Tc diamond has better crystallinity compared to that of other superconducting diamond films. In addition, the susceptibility shows a small transition above 20 K in the high quality diamond, suggesting a signature of superconductivity above 20 K. These results strongly suggest that heavier carrier doped defect-free crystalline diamond could give rise to high Tc diamond.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Soft x-ray photoemission study of new BiS$_{2}$-layered superconductor LaO$_{1-x}$F$_{x}$BiS$_{2}$

We use core level and valence band soft x-ray photoemission spectroscopy (SXPES) to investigate electronic structure of new BiS$_{2}$ layered superconductor LaO$_{1-x}$F$_{x}$BiS$_{2}$. Core level spectra of doped samples show a new spectral feature at the lower binding energy side of the Bi 4${f}$ main peak, which may be explained by core-hole screening with metallic states near the Fermi level ($E_{\rm F}$). Experimental electronic structure and its ${x}$ dependence (higher binding energy shift of the valence band as well as appearance of new states near $E_{\rm F}$ having dominant Bi 6${p}$ character) were found to be consistent with the predictions of band structure calculations in general. Noticeable deviation of the spectral shape of the states near $E_{\rm F}$ from that of calculations might give insight into the interesting physical properties. These results provide first experimental electronic structure of the new BiS$_{2}$ layered superconductors.

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