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Hiroyuki Okazaki

Hiroyuki Okazaki contributes to research discovery and scholarly infrastructure.

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Published work

18 published item(s)

preprint2016arXiv

Origin of Pressure-induced Superconducting Phase in K$_{x}$Fe$_{2-y}$Se$_{2}$ studied by Synchrotron X-ray Diffraction and Spectroscopy

Pressure dependence of the electronic and crystal structures of K$_{x}$Fe$_{2-y}$Se$_{2}$, which has pressure-induced two superconducting domes of SC I and SC II, was investigated by x-ray emission spectroscopy and diffraction. X-ray diffraction data show that compressibility along the c-axis changes around 12 GPa, where a new superconducting phase of SC II appears. This suggests a possible tetragonal to collapsed tetragonal phase transition. X-ray emission spectroscopy data also shows the change in the electronic structure around 12 GPa. These results can be explained by the scenario that the two SC domes under pressure originate from the change of Fermi surface topology. Present results here show that the nesting condition plays a key role in stabilizing the superconducting state helping to address outstanding fundamental question as to why the SC II appears under pressure.

preprint2015arXiv

Electrochemical deposition of FeSe on RABiTS tapes

FeSe film is successfully fabricated onto Rolling Assisted Biaxially Textured Substrate (RABiTS) tapes by an electrochemical deposition technique. The deposited FeSe films tend to become high crystallinity with a decrease in the applied voltage to -1.0 V, and the compositional ratio of Fe to Se approaches 1:1. The sample deposited at -1.0 V shows a superconducting transition approximately 8.0 K in the magnetic susceptibility.

preprint2014arXiv

Electronic Structures of CeM2Al10 (M = Fe, Ru, and Os) Studied by Soft X-ray Resonant and High-Resolution Photoemission Spectroscopies

We have performed a photoemission spectroscopy (PES) study of CeM2Al10 (M = Fe, Ru, and Os) to directly observe the electronic structure involved in the unusual magnetic ordering. Soft X-ray resonant (SXR) PES provides spectroscopic evidence of the hybridization between conduction and Ce 4f electrons (c-f hybridization) and the order of the hybridization strength (Ru < Os < Fe). High-resolution (HR) PES of CeRu2Al10 and CeOs2Al10, as compared with that of CeFe2Al10, identifies two structures that can be ascribed to structures induced by the c-f hybridization and the antiferromagnetic ordering, respectively. Although the c-f hybridization-induced structure is a depletion of the spectral intensity (pseudogap) around the Fermi level (EF) with an energy scale of 20-30 meV, the structure related to the antiferromagnetic ordering is observed as a shoulder at approximately 10-11 meV within the pseudogap. The energies of the shoulder structures of CeRu2Al10 and CeOs2Al10 are approximately half of the optical gap (20 meV), indicating that EF is located at the midpoint of the gap.

preprint2014arXiv

Signature of high Tc around 25K in higher quality heavily boron-doped diamond

Diamond has outstanding physical properties: the hardest known material, a wide band gap, the highest thermal conductivity, and a very high Debye temperature. In 2004, Ekimov et al. discovered that heavily boron-doped (B-doped) diamond becomes a superconductor around 4 K. Our group successfully controlled the boron concentration and synthesized homoepitaxially grown superconducting diamond films by a CVD method. By CVD method, we found that superconductivity appears when the boron concentration (nB) exceeds a metal-insulator transition concentration of 3.0x10^20 cm^-3 and its Tczero increases up to 7.4 K with increasing nB. We additionally elucidated that the holes formed at the valence band are responsible for the metallic states leading to superconductivity. The calculations predicted that the hole doping into the valence band induces strong attractive interaction and a rapid increase in Tc with increasing boron concentration. According to the calculations, if substitutional doped boron could be arranged periodically or the degree of disorder is reduced, a Tc of approximately 100 K could be achieved via minimal percent doping. In this work, we have successfully observed zero resistivity above 10 K and an onset of resistivity reduction at 25.2 K in heavily B-doped diamond film. However, the effective carrier concentration is similar to that of superconducting diamond with a lower Tc. We found that the carrier has a longer mean free path and lifetime than previously reported, indicating that this highest Tc diamond has better crystallinity compared to that of other superconducting diamond films. In addition, the susceptibility shows a small transition above 20 K in the high quality diamond, suggesting a signature of superconductivity above 20 K. These results strongly suggest that heavier carrier doped defect-free crystalline diamond could give rise to high Tc diamond.

preprint2014arXiv

Soft x-ray photoemission study of new BiS$_{2}$-layered superconductor LaO$_{1-x}$F$_{x}$BiS$_{2}$

We use core level and valence band soft x-ray photoemission spectroscopy (SXPES) to investigate electronic structure of new BiS$_{2}$ layered superconductor LaO$_{1-x}$F$_{x}$BiS$_{2}$. Core level spectra of doped samples show a new spectral feature at the lower binding energy side of the Bi 4${f}$ main peak, which may be explained by core-hole screening with metallic states near the Fermi level ($E_{\rm F}$). Experimental electronic structure and its ${x}$ dependence (higher binding energy shift of the valence band as well as appearance of new states near $E_{\rm F}$ having dominant Bi 6${p}$ character) were found to be consistent with the predictions of band structure calculations in general. Noticeable deviation of the spectral shape of the states near $E_{\rm F}$ from that of calculations might give insight into the interesting physical properties. These results provide first experimental electronic structure of the new BiS$_{2}$ layered superconductors.

preprint2013arXiv

Coexistence of bulk superconductivity and ferromagnetism in CeO1-xFxBiS2

We show the observation of the coexistence of bulk superconductivity and ferromagnetism in CeO1-xFxBiS2(x = 0 - 1.0) prepared by annealing under high-pressure. In CeO1-xFxBiS2 system, both superconductivity and two types of ferromagnetism with respective magnetic transition temperatures of 4.5 K and 7.5 K are induced upon systematic F substitution. This fact suggests that carriers generated by the substitution of O by F are supplied to not only the BiS2 superconducting layers but also the CeO blocking layers. Furthermore, the highest superconducting transition temperature is observed when the ferromagnetism is also enhanced, which implies that superconductivity and ferromagnetism are linked to each other in the CeO1-xFxBiS2 system.

preprint2013arXiv

Evolution of superconductivity in isovalent Te-substituted KxFe2-ySe2 crystals

We report the evolution of superconductivity and the phase diagram of the KxFe2-ySe2-zTez (z=0-0.6) crystals grown by a simple one-step synthesis. No structural transition is observed in any crystals, while lattice parameters exhibit a systematic expansion with Te content. The Tc exhibits a gradual decrease with increasing Te content from Tconset = 32.9 K at z = 0 to Tconset = 27.9 K at z = 0.5, followed by a sudden suppression of superconductivity at z = 0.6. Upon approaching a Te concentration of 0.6, the shielding volume fraction decreases and eventually drops to zero. Simultaneously, hump positions in r-T curve shift to lower temperatures. These results suggest that isovalent substitution of Te for Se in KxFe2-ySe2 crystals suppresses the superconductivity in this system.

preprint2013arXiv

Magnetoelectric Effect driven by Magnetic Domain Modification in LuFe2O4

Magneto-capacitance effect was investigated using the impedance spectroscopy on single crystals of LuFe2O4. The intrinsic impedance response could be separated from the interfacial response and showed a clear hysteresis loop below TFerri ~ 240 K under the magnetic field. The neutron diffraction experiment under the magnetic field proves the origin of dielectric property related to the motion of nano-sized ferromagnetic domain boundary. These results imply that the modification of the microscopic domain structure is responsible for the magnetoelectric effect in LuFe2O4.

preprint2013arXiv

Phase diagram and superconductivity at 58.1 K in α-FeAs free SmFeAsO1-xFx

The Phase diagram of SmFeAsO1-xFx in terms of x is exhibited in this study. SmFeAsO1-xFx from x = 0 to x = 0.3 were prepared by low temperature sintering with slow cooling. The low temperature sintering suppresses the formation of the amorphous FeAs, which is inevitably produced as an impurity by using high temperature sintering. Moreover, slow cooling is effective to obtain the high fluorine concentration. The compositional change from feedstock composition is quite small after this synthesis. We can reproducibly observe a record superconducting transition for an iron based superconductor at 58.1 K. This achievement of a high superconducting transition is due to the success in a large amount of fluorine substitution. A shrinking of the a lattice parameter caused by fluorine substitution is observed and the substitutional rate of fluorine changes at x =0.16.

preprint2013arXiv

α-FeAs-free SmFeAsO1-xFx by low temperature sintering with slow cooling

We obtained amorphous-FeAs-free SmFeAsO1-xFx using a low temperature sintering with slow cooling. SmFeAsO1-xFx is sintered at 980 °C for 40 hours and cooled slowly down to 600 °C. The low temperature sintering suppresses the formation of amorphous FeAs, and the slow cooling introduces much fluorine into SmFeAsO1-xFx. The superconductivity of this sample appears at 57.8 K and the superconducting volume fraction reaches 96 %. To study the change of fluorine concentration during the cooling process, samples are quenched by water at 950 °C, 900 °C, 850 °C, 800 °C, 750 °C and 700 °C. It is found that fluorine is substituted not only at the maximum heating temperature but also during the cooling process. The low temperature sintering with slow cooling is very effective to obtain a homogeneous SmFeAsO1-xFx with high fluorine concentration.

preprint2012arXiv

BiS2 - based superconductivity in F-substituted NdOBiS2

We have successfully synthesized a new BiS2-based superconductor NdOBiS2 with F-doping. This compound is composed of superconducting BiS2 layers and blocking NdO layers, which indicates that the BiS2 layer is the one of the common superconducting layers like the CuO2 layer of cuprates or Fe-As layer of Fe-based superconductors. We can obtain NdO1-xFxBiS2 with bulk superconductivity by a solid-state reaction under ambient pressure. Therefore, NdO1-xFxBiS2 should be the suitable material to elucidate the mechanism of superconductivity in the BiS2-layer.

preprint2012arXiv

Effect of the indium addition on the superconducting property and the impurity phase in polycrystalline SmFeAsO1-xFx

We report enhancement in the magnetic critical current density of indium added polycrystalline SmFeAsO1-xFx. The value of magnetic Jc is around 25 kA/cm2 at 4.2 K under self-magnetic field. Polycrystalline SmFeAsO1-xFx is mainly composed of the superconducting grains and a little of amorphous FeAs compounds. These areas randomly co-exist and amorphous areas are located between superconducting grains. Therefore, the superconducting current is prevented by the amorphous areas. In this study, it is found that indium addition to polycrystalline SmFeAsO1-xFx removes these amorphous areas and induces the bringing together the superconducting grains. It means the total contact surfaces of grains are increased. We suggest that the enhancement of the magnetic critical current density is a direct effect of the indium addition.

preprint2012arXiv

Electrodeposition as a new route to synthesize superconducting FeSe

We have successfully synthesized FeSe films by the electrochemical deposition in the electrolyte containing FeCl_{2}\cdot4H_{2}O, SeO_{2} and Na_{2}SO_{4}. The composition ratio of Fe and Se was controlled by the synthesis voltage and pH value. The FeSe film with the composition ratio of Fe : Se = 1 : 1 is fabricated at a voltage of -0.9 V and pH 2.1 in our electrochemical deposition. This sample has a highly crystalline tetragonal FeSe structure and exhibits a superconducting transition at 8.1 K, comparable to FeSe synthesized by other methods.

preprint2012arXiv

Enhancement of superconducting properties in FeSe wires using a quenching technique

Enhancements of superconducting properties were observed in FeSe wires using a quenching technique. Zero resistivity was achieved at about 10 K in quenched wires, which is about 2 K higher than that of polycrystalline FeSe bulk. Furthermore, transport Jc of quenched wires showed three times higher than that of furnace-cooled wires. In contrast, the quenched polycrystalline FeSe bulks did not show the enhancement of Tc. The quenching technique is a greatly promising for fabricating FeSe wires with high Tc and high Jc, and quenched FeSe wires have high potential for superconducting wire applications.

preprint2012arXiv

One-step synthesis of KxFe2-ySe2 single crystals for high critical current density

We have established a simple process that allows for the one-step synthesis of KxFe2-ySe2 single crystals, which exhibit high critical current density Jc. The post annealing and quenching technique has improved the homogeneity of as-grown crystals, resulting in full shielding of the external magnetic field. The quenched crystals show a superconducting transition at Tconset = 32.9 K and Tczero = 32.1 K. The upper critical fields μ_{0}Hc2(0) for H//ab and H//c are estimated to be ~206 and ~50 T, respectively. The critical current densities Jc for H//ab and H//c reach as high as 1.0\times10^{5} and 3.4\times10^{4} A/cm2 at 5 K. Furthermore, Jc exhibits a high field performance and a significantly weak temperature dependence up to 5 T, suggesting strong pinning. These results demonstrate that KxFe2-ySe2 would be a promising candidate material for practical applications.

preprint2011arXiv

Electrochemical synthesis of iron-based superconductor FeSe films

The superconducting FeSe films were successfully fabricated using the electrochemical synthesis. The composition ratio of Fe and Se can be controlled by the electric potential and pH value. We found that the FeSe films deposited at the electric potential -1.75 V and pH 2.3 show the superconducting transition at 3.5 K. The establishment of this electrochemical synthesis technique will provide many advantages for application.

preprint2011arXiv

Preparation of Thin Crystals of FeTe1-xSx Using the Scotch-Tape Method

We have investigated an applicability of the scotch-tape method to fabricating thin crystals of Fe chalcogenide FeTe1-xSx. Thin crystals with a typical thickness of 40 nm were expectedly left on a Si substrate. Thin films prepared using this process will develop both detailed studies on intrinsic nature of Fe-based superconductivity and application to superconducting devices.