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Researcher profile

Takanori Kida

Takanori Kida contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.str-elcond-mat.mtrl-sci

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Published work

3 published item(s)

preprint2023arXiv

Effect of interface quality on spin Hall magnetoresistance in Pt/MgFe$_{2}$O$_{4}$ bilayers

We report on spin Hall magnetoresistance (SMR) in bilayers composed of Pt and magnetic insulator MgFe$_{2}$O$_{4}$ (MFO) with spinel structure. The Pt thickness dependence of the SMR reveals that annealing of the MFO surface before depositing the Pt layer is crucial for a large SMR with better interface quality. We also found that oxygen pressure during the MFO growth hardly affects the SMR while it influences on magnetic property of the MFO film. Our findings provide important clues to further understanding the spin transport at interfaces containing magnetic insulators, facilitating development of low power consumption devices.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Magnetic-field-induced Anderson localization in orbital selective antiferromagnet BaMn$_2$Bi$_2$

We report a metal-insulator transition (MIT) in the half-filled multiorbital antiferromagnet (AF) BaMn$_2$Bi$_2$ that is tunable by a magnetic field perpendicular to the AF sublattices. Instead of an Anderson-Mott mechanism usually expected in strongly correlated systems, we find by scaling analyses that the MIT is driven by an Anderson localization. Electrical and thermoelectrical transport measurements in combination with electronic band calculations reveal a strong orbital-dependent correlation effect, where both weakly and strongly correlated $3d$-derived bands coexist with decoupled charge excitations. Weakly correlated holelike carriers in the $d_{xy}$-derived band dominate the transport properties and exhibit the Anderson localization, whereas other $3d$ bands show clear Mott-like behaviors with their spins ordered into AF sublattices. The tuning role played by the perpendicular magnetic field supports a strong spin-spin coupling between itinerant holelike carriers and the AF fluctuations, which is in sharp contrast to their weak charge coupling.

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preprint2021arXiv

Large negative magnetoresistance in BaMn$_2$Bi$_2$ antiferromagnet

A very large negative magnetoresistance (LNMR) is observed in the insulating regime of the antiferromagnet BaMn$_2$Bi$_2$ when a magnetic field is applied perpendicular to the direction of the sublattice magnetization. High perpendicular magnetic field eventually suppresses the insulating behavior and allows BaMn$_2$Bi$_2$ to re-enter a metallic state. This effect is seemingly unrelated to any field induced magnetic phase transition, as measurements of magnetic susceptibility and specific heat did not find any anomaly as a function of magnetic fields at temperatures above $2\,\mathrm{K}$. The LNMR appears in both current-in-plane and current-out-of-plane settings, and Hall effects suggest that its origin lies in an extreme sensitivity of conduction processes of holelike carriers to the infinitesimal field-induced canting of the sublattice magnetization. The LNMR-induced metallic state may thus be associated with the breaking of the antiferromagnetic parity-time symmetry by perpendicular magnetic fields and/or the intricate multi-orbital electronic structure of BaMn$_2$Bi$_2$.

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