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Takanori Kida

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4 publications

preprint2023arXiv

Effect of interface quality on spin Hall magnetoresistance in Pt/MgFe2_{2}O4_{4} bilayers

We report on spin Hall magnetoresistance (SMR) in bilayers composed of Pt and magnetic insulator MgFe2_{2}O4_{4} (MFO) with spinel structure. The Pt thickness dependence of the SMR reveals that annealing of the MFO surface before depositing the Pt layer is crucial for a large SMR with better interface quality. We also found that oxygen pressure during the MFO growth hardly affects the SMR while it influences on magnetic property of the MFO film. Our findings provide important clues to further understanding the spin transport at interfaces containing magnetic insulators, facilitating development of low power consumption devices.

preprint2022arXiv

Magnetic-field-induced Anderson localization in orbital selective antiferromagnet BaMn2_2Bi2_2

We report a metal-insulator transition (MIT) in the half-filled multiorbital antiferromagnet (AF) BaMn2_2Bi2_2 that is tunable by a magnetic field perpendicular to the AF sublattices. Instead of an Anderson-Mott mechanism usually expected in strongly correlated systems, we find by scaling analyses that the MIT is driven by an Anderson localization. Electrical and thermoelectrical transport measurements in combination with electronic band calculations reveal a strong orbital-dependent correlation effect, where both weakly and strongly correlated 3d3d-derived bands coexist with decoupled charge excitations. Weakly correlated holelike carriers in the dxyd_{xy}-derived band dominate the transport properties and exhibit the Anderson localization, whereas other 3d3d bands show clear Mott-like behaviors with their spins ordered into AF sublattices. The tuning role played by the perpendicular magnetic field supports a strong spin-spin coupling between itinerant holelike carriers and the AF fluctuations, which is in sharp contrast to their weak charge coupling.

preprint2021arXiv

Large negative magnetoresistance in BaMn2_2Bi2_2 antiferromagnet

A very large negative magnetoresistance (LNMR) is observed in the insulating regime of the antiferromagnet BaMn2_2Bi2_2 when a magnetic field is applied perpendicular to the direction of the sublattice magnetization. High perpendicular magnetic field eventually suppresses the insulating behavior and allows BaMn2_2Bi2_2 to re-enter a metallic state. This effect is seemingly unrelated to any field induced magnetic phase transition, as measurements of magnetic susceptibility and specific heat did not find any anomaly as a function of magnetic fields at temperatures above 2 K2\,\mathrm{K}. The LNMR appears in both current-in-plane and current-out-of-plane settings, and Hall effects suggest that its origin lies in an extreme sensitivity of conduction processes of holelike carriers to the infinitesimal field-induced canting of the sublattice magnetization. The LNMR-induced metallic state may thus be associated with the breaking of the antiferromagnetic parity-time symmetry by perpendicular magnetic fields and/or the intricate multi-orbital electronic structure of BaMn2_2Bi2_2.

preprint2009arXiv

Upper critical fields of the 11-system iron-chalcogenide superconductor FeSe0.25_{0.25}Te0.75_{0.75}

We have performed electrical resistivity measurements of a polycrystalline sample of FeSe0.25_{0.25}Te0.75_{0.75}, which exhibits superconductivity at Tc∼14T_{\rm c} \sim 14 K, in magnetic fields up to 55 T to determine the upper critical field μ0Hc2μ_{0}H_{\rm c2}. In this compound, very large slopes of μ0Hc2μ_{0}H_{\rm c2} at the onset, the mid-point, the zero-resistivity temperatures on superconductivity are determined to be -13.7, -10.1, and -6.9 T/K, respectively. The observed μ0Hc2(T)μ_{0}H_{\rm c2}(T)s of this compound are considerably smaller than those expected from the Werthamer-Helfand-Hohenberg model, manifesting the Pauli limiting behavior. These results suggest that this compound has a large Maki parameter, but it is smaller than that calculated for a weak-coupling superconductor, indicating a large superconducting gap of this compound as a strong-coupling superconductor.

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