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Source author record

Saburo Takahashi

Saburo Takahashi appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.supr-con

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Published work

15 published item(s)

preprint2016arXiv

Spin Hall magnetoresistance in metallic bilayers

Spin Hall magnetoresistance (SMR) is studied in metallic bilayers that consist of heavy metal (HM) layer and a ferromagnetic metal (FM) layer. We find nearly a ten-fold increase of SMR in W/CoFeB compared to previously studied HM/ferromagnetic insulator (FI) systems. The SMR increases with decreasing temperature despite the negligible change in the W layer resistivity with temperature. A model is developed to account for the absorption of the longitudinal spin current to the FM layer, one of the key characteristics of a metallic ferromagnet. We find that the model not only quantitatively describes the HM layer thickness dependence of SMR, allowing accurate estimation of the spin Hall angle and the spin diffusion length of the HM layer, but also can account for the temperature dependence of SMR by assuming a temperature dependent spin polarization of the FM layer. These results illustrate the unique role a metallic ferromagnetic layer plays in defining spin transmission across the HM/FM interface.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Theory of spin Hall magnetoresistance (SMR) and related phenomena

We review the recently discovered spin Hall magnetoresistance (SMR) and related effects from a theoretical point of view. The SMR is observed in bilayers of a magnetic insulator and a metal, in which spin currents aregenerated in the normal metal due to the spin Hall effect. The associated angular momentum transfer to the ferromagnetic layer and thereby the electrical resistance is modulated by the angle between the applied current and the magnetization direction. The SMR provides a convenient tool to non-invasively measure the magnetization direction and spin-transfer torque to an insulator. We introduce the minimal theoretical instruments to calculate the SMR, i.e. spin diffusion theory and quantum mechanical boundary conditions. This leads to a small set of parameters that can be fitted to experiments. We discuss the limitations of the theory as well as alternative mechanisms such as the ferromagnetic proximity effect and Rashba spin-orbit torques, and point out new developments related to the SMR.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Current-induced spin torque resonance of magnetic insulators affected by field-like spin-orbit torques and out-of-plane magnetizations

The spin-torque ferromagnetic resonance (ST-FMR) in a bilayer system consisting of a magnetic insulator such as Y3Fe5O12 and a normal metal with spin-orbit interaction such as Pt is addressed theoretically. We model the ST-FMR for all magnetization directions and in the presence of field-like spin-orbit torques based on the drift-diffusion spin model and quantum mechanical boundary conditions. ST-FMR experiments may expose crucial information about the spin-orbit coupling between currents and magnetization in the bilayers.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Magnetization damping in noncollinear spin valves with antiferromagnetic interlayer couplings

We study the magnetic damping in the simplest of synthetic antiferromagnets, i.e. antiferromagnetically exchange-coupled spin valves in which applied magnetic fields tune the magnetic configuration to become noncollinear. We formulate the dynamic exchange of spin currents in a noncollinear texture based on the spindiffusion theory with quantum mechanical boundary conditions at the ferrromagnet|normal-metal interfaces and derive the Landau-Lifshitz-Gilbert equations coupled by the static interlayer non-local and the dynamic exchange interactions. We predict non-collinearity-induced additional damping that can be sensitively modulated by an applied magnetic field. The theoretical results compare favorably with published experiments.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Modelling of the Peltier effect in magnetic multilayers

We model the charge, spin, and heat currents in ferromagnetic metal$|$normal metal$|$normal metal trilayer structures in the two current model, taking into account bulk and interface thermoelectric properties as well as Joule heating. Results include the temperature distribution as well as resistance-current curves that reproduce the observed shifted parabolic characteristics. Thin tunneling barriers can enhance the apparent Peltier cooling. The model agrees with experimental results for wide multilayer pillars, but the giant effects observed for diameters $\lesssim 100\,$nm are still under discussion.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Anomalous temperature dependence of current induced torques in CoFeB|MgO heterostructures with Ta based underlayers

We have studied the underlayer thickness and temperature dependences of the current induced effective field in CoFeB|MgO heterostructures with Ta based underlayers. The underlayer thickness at which the effective field saturates is found to be different between the two orthogonal components of the effective field, i.e. the damping-like term tends to saturate at smaller underlayer thickness than the field-like term. For large underlayer thickness films in which the effective field saturates, we find that the temperature significantly influences the size of the effective field. A striking difference is found in the temperature dependence of the two components: the damping-like term decreases whereas the field-like term increases with increasing temperature. Using a simple spin diffusion-spin transfer model, we find that all of these results can be accounted for provided the real and imaginary parts of an effective spin mixing conductance are negative. These results imply that either spin transport in this system is different from conventional metallic interfaces or effects other spin diffusion into the magnetic layer need to be taken account in order to model the system accurately.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Current-induced spin torque resonance of a magnetic insulator

Pure spin currents transport angular momentum without an associated charge flow. This unique property makes them attractive for spintronics applications, such as torque induced magnetization control in nanodevices that can be used for sensing, data storage, interconnects and logics. Up to now, however, most spin transfer torque studies focused on metallic ferromagnets, while magnetic insulators were largely ignored, in spite of superior magnetic quality factors. Here, we report the observation of spin torque-induced magnetization dynamics in a magnetic insulator. Our experiments show that in ultrathin magnetic insulators the spin torque induced magnetization dynamics can be substantially larger than those generated by the Oersted field. This opens new perspectives for the efficient integration of ferro-, ferri-, and antiferromagnetic insulators into electronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Current-induced spin torque resonance of magnetic insulators

We formulate a theory of the AC spin Hall magnetoresistance (SMR) in a bilayer system consisting of a magnetic insulator such as yttrium iron garnet (YIG) and a heavy metal such as platinum (Pt). We derive expressions for the DC voltage generation based on the drift-diffusion spin model and quantum mechanical boundary condition at the interface that reveal a spin torque ferromagnetic resonance (ST-FMR). We predict that ST-FMR experiments will reveal valuable information on the current-induced magnetization dynamics of magnetic insulators and AC spin Hall effect.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Spin torque transistor revisited

This paper reports on the improvement of the differential current gain in the spin-torque transistor based on two independent innovations, viz.the use of magnetic insulators and the spin Hall effect. Since, except for a few examples, spin transistors lack the current gain that is essential for many applications, spintronics and magnetic information technology lack an essential functionality compared to CMOS devices. Here, we show that negative differential resistance and large differential gain is possible in a large region of parameter space of the spin torque transistor. We also demonstrate that functionality is preserved when the control part is replaced by a normal metal film with a large spin Hall angle.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Theory of spin Hall magnetoresistance

We present a theory of the spin Hall magnetoresistance (SMR) in multilayers made from an insulating ferromagnet F, such as yttrium iron garnet (YIG), and a normal metal N with spin-orbit interactions, such as platinum (Pt). The SMR is induced by the simultaneous action of spin Hall and inverse spin Hall effects and therefore a non-equilibrium proximity phenomenon. We compute the SMR in F$|$N and F$|$N$|$F layered systems, treating N by spin-diffusion theory with quantum mechanical boundary conditions at the interfaces in terms of the spin-mixing conductance. Our results explain the experimentally observed spin Hall magnetoresistance in N$|$F bilayers. For F$|$N$|$F spin valves we predict an enhanced SMR amplitude when magnetizations are collinear. The SMR and the spin-transfer torques in these trilayers can be controlled by the magnetic configuration.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Gigantic enhancement of spin Seebeck effect by phonon drag

We investigate both theoretically and experimentally a gigantic enhancement of the spin Seebeck effect in a prototypical magnet LaY$_2$Fe$_5$O$_{12}$ at low temperatures. Our theoretical analysis sheds light on the important role of phonons; the spin Seebeck effect is enormously enhanced by nonequilibrium phonons that drag the low-lying spin excitations. We further argue that this scenario gives a clue to understand the observation of the spin Seebeck effect that is unaccompanied by a global spin current, and predict that the substrate condition affects the observed signal.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Linear-response theory of spin Seebeck effect in ferromagnetic insulators

We formulate a linear response theory of the spin Seebeck effect, i.e., a spin voltage generation from heat current flowing in a ferromagnet. Our approach focuses on the collective magnetic excitation of spins, i.e., magnons. We show that the linear-response formulation provides us with a qualitative as well as quantitative understanding of the spin Seebeck effect observed in a prototypical magnet, yttrium iron garnet.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Extremely long quasiparticle spin lifetimes in superconducting aluminium using MgO tunnel spin injectors

There has been an intense search in recent years for long-lived spin-polarized carriers for spintronic and quantum-computing devices. Here we report that spin polarized quasi-particles in superconducting aluminum layers have surprisingly long spin-lifetimes, nearly a million times longer than in their normal state. The lifetime is determined from the suppression of the aluminum's superconductivity resulting from the accumulation of spin polarized carriers in the aluminum layer using tunnel spin injectors. A Hanle effect, observed in the presence of small in-plane orthogonal fields, is shown to be quantitatively consistent with the presence of long-lived spin polarized quasi-particles. Our experiments show that the superconducting state can be significantly modified by small electric currents, much smaller than the critical current, which is potentially useful for devices involving superconducting qubits.

0 citations0 reviewsNo code linkedOpen access
preprint2002arXiv

Nonequilibrium spin fluctuations in single-electron transistors

We show that nonequilibrium spin fluctuations significantly influence the electronic transport in a single-electron transistor, when the spin relaxation on the island is slow compared to other relaxation processes, and when size effects play a role. To describe spin fluctuations we generalize the `orthodox' tunneling theory to take into account the electron spin, and show that the transition between consecutive charge states can occur via a high-spin state. This significantly modifies the shape of Coulomb steps and gives rise to additional resonances at low temperatures. Recently some of our predictions were confirmed by Fujisawa et al. [Phys. Rev. Lett. 88, 236802 (2002)], who demonstrated experimentally the importance of nonequilibrum spin fluctuations in transport through quantum dots.

0 citations0 reviewsNo code linkedOpen access