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Takafumi Sato

Takafumi Sato appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elcond-mat.supr-con

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Published work

11 published item(s)

preprint2022arXiv

Angle-resolved photoemission spectroscopy

For solid-state materials, the electronic structure, E(k), is critical in determining a crystal's physical properties. By experimentally detecting the electronic structure, the fundamental physics can be revealed. Angle-resolved photoemission spectroscopy (ARPES) is a powerful technique for directly observing the electronic structure with energy- and momentum-resolved information. Over the past decades, major improvements in the energy and momentum resolution, alongside the extension of ARPES observables to spin (SpinARPES), micrometer or nanometer lateral dimensions (MicroARPES/NanoARPES), and femtosecond timescales (TrARPES), have led to major scientific advances. These advantages have been achieved across a wide range of quantum materials, such as high-temperature superconductors, topological materials, two-dimensional materials and heterostructures. This primer introduces key aspects of ARPES principles, instrumentation, data analysis, and representative scientific cases to demonstrate the power of the method. Perspectives and challenges on future developments are also discussed.

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preprint2022arXiv

Carrier Injection and Manipulation of Charge-Density Wave in Kagome Superconductor CsV3Sb5

Kagome metals AV3Sb5 (A = K, Rb, and Cs) exhibit a unique superconducting ground state coexisting with charge-density wave (CDW), whereas how these characteristics are affected by carrier doping remains unexplored because of the lack of an efficient carrier-doping method. Here we report successful electron doping to CsV3Sb5 by Cs dosing, as visualized by angle-resolved photoemission spectroscopy. We found that the electron doping with Cs dosing proceeds in an orbital-selective way, as characterized by a marked increase in electron filling of the Sb 5pz and V 3dxz/yz bands as opposed to relatively insensitive nature of the V 3dxy/x2-y2 bands. By monitoring the temperature evolution of the CDW gap around the M point, we found that the CDW can be completely killed by Cs dosing while keeping the saddle point with the V 3dxy/x2-y2 character almost pinned at the Fermi level. The present result suggests a crucial role of multi-orbital effect to the occurrence of CDW, and provides an important step toward manipulating the CDW and superconductivity in AV3Sb5.

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preprint2022arXiv

Development of a versatile micro-focused angle-resolved photoemission spectroscopy system with Kirkpatrick-Baez mirror optics

Angle-resolved photoemission spectroscopy using a micro-focused beam spot (micro-ARPES) is becoming a powerful tool to elucidate key electronic states of exotic quantum materials. We have developed a versatile micro-ARPES system based on synchrotron radiation beam focused with a Kirkpatrick-Baez mirror optics. The mirrors are monolithically installed on a stage, which is driven with five-axes motion, and are vibrationally separated from the ARPES measurement system. Spatial mapping of the Auphotolithography pattern on Si signifies the beam spot size of 10 $μ$m (horizontal) x 12 $μ$m (vertical) at the sample position, which is well suited to resolve the fine structure in local electronic states. Utilization of the micro beam and the high precision sample motion system enables the accurate spatially resolved band-structure mapping, as demonstrated by the observation of a small band anomaly associated with tiny sample bending near the edge of a cleaved topological insulator single crystal.

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preprint2022arXiv

Three-dimensional energy gap and origin of charge-density wave in kagome superconductor KV3Sb5

Kagome lattices offer a fertile ground to explore exotic quantum phenomena associated with electron correlation and band topology. The recent discovery of superconductivity coexisting with charge-density wave (CDW) in the kagome metals KV3Sb5, RbV3Sb5, and CsV3Sb5 suggests an intriguing entanglement of electronic order and superconductivity. However, the microscopic origin of CDW, a key to understanding the superconducting mechanism and its possible topological nature, remains elusive. Here, we report angle-resolved photoemission spectroscopy of KV3Sb5 and demonstrate a substantial reconstruction of Fermi surface in the CDW state that accompanies the formation of small three-dimensional pockets. The CDW gap exhibits a periodicity of undistorted Brillouin zone along the out-of-plane wave vector, signifying a dominant role of the in-plane inter-saddle-point scattering to the mechanism of CDW. The characteristics of experimental band dispersion can be captured by first-principles calculations with the inverse star-of-David structural distortion. The present result indicates a direct link between the low-energy excitations and CDW, and puts constraints on the microscopic theory of superconductivity in alkali-metal kagome lattices.

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preprint2020arXiv

Modulation of Dirac electrons in epitaxial Bi2Se3 ultrathin films on van-der-Waals ferromagnet Cr2Si2Te6

We investigated the Dirac-cone state and its modulation when an ultrathin film of topological insulator Bi2Se3 was epitaxially grown on a van-der-Waals ferromagnet Cr2Si2Te6 (CST) by angle-resolved photoemission spectroscopy. We observed a gapless Dirac-cone surface state in 6 quintuple-layer (QL) Bi2Se3 on CST, whereas the Dirac cone exhibits a gap of 0.37 eV in 2QL counterpart. Intriguingly, this gap is much larger than those for Bi2Se3 films on Si(111). We also revealed no discernible change in the gap magnitude across the ferromagnetic transition of CST, suggesting the very small characteristic length and energy scale of the magnetic proximity effect. The present results suggest a crucial role of interfacial coupling for modulating Dirac electrons in topological-insulator hybrids.

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preprint2020arXiv

Observation of inverted band structure in topological Dirac-semimetal candidate CaAuAs

We have performed high-resolution angle-resolved photoemission spectroscopy of ternary pnictide CaAuAs which is predicted to be a three-dimensional topological Dirac semimetal (TDS). By accurately determining the bulk-band structure, we have revealed the coexistence of three-dimensional and quasi-two-dimensional Fermi surfaces with dominant hole carriers. The band structure around the Brillouin-zone center is characterized by an energy overlap between hole and electron pockets, in excellent agreement with first-principles band-structure calculations. This indicates the occurrence of bulk-band inversion, supporting the TDS state in CaAuAs. Because of the high tunability in the chemical composition besides the TDS nature, CaAuAs provides a precious opportunity for investigating the quantum phase transition from TDS to other exotic topological phases.

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preprint2020arXiv

Signature of band inversion in the antiferromagnetic phase of axion insulator candidate EuIn2As2

We have performed angle-resolved photoemission spectroscopy on EuIn2As2 which is predicted to be an axion insulator in the antiferromagnetic state. By utilizing soft-x-ray and vacuum-ultraviolet photons, we revealed a three-dimensional hole pocket centered at the Gamma point of bulk Brillouin zone together with a heavily hole-doped surface state in the paramagnetic phase. Upon entering the antiferromagnetic phase, the band structure exhibits a marked reconstruction characterized by the emergence of a "M"-shaped bulk band near the Fermi level. The qualitative agreement with first-principles band-structure calculations suggests the occurrence of bulk-band inversion at the Gamma point in the antiferromagnetic phase. We suggest that EuIn2As2 provides a good opportunity to study the exotic quantum phases associated with possible axion-insulator phase.

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preprint2020arXiv

Unusual temperature evolution of band structure of Bi(111) studied by angle-resolved photoemission spectroscopy and density functional theory

We have performed angle-resolved photoemission spectroscopy of Bi(111) thin films grown on Si(111), and investigated the evolution of band structure with temperature. We revealed an unexpectedly large temperature variation of the energy dispersion for the Rashba-split surface state and the quantum-well states, as seen in the highly momentum-dependent energy shift as large as 0.1 eV. A comparison of the band dispersion between experiment and first-principles band-structure calculations suggests that the interlayer spacing at the topmost Bi bilayer expands upon temperature increase. The present study provides a new pathway for investigating the interplay between lattice and electronic states through the temperature dependence of band structure.

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preprint2016arXiv

Metal-insulator transition and tunable Dirac-cone surface state in the topological insulator TlBi1-xSbxTe2 studied by angle-resolved photoemission

We report a systematic angle-resolved photoemission spectroscopy on topological insulator (TI) TlBi1-xSbxTe2 which is bulk insulating at 0.5 < x < 0.9 and undergoes a metal-insulator-metal transition with the Sb content x. We found that this transition is characterized by a systematic hole doping with increasing x, which results in the Fermi-level crossings of the bulk conduction and valence bands at x~ 0 and x~1, respectively. The Dirac point of the topological surface state is gradually isolated from the valence-band edge, accompanied by a sign reversal of Dirac carriers. We also found that the Dirac velocity is the largest among known solid-solution TI systems. The TlBi1-xSbxTe2 system thus provides an excellent platform for Dirac-cone engineering and device applications of TIs.

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preprint2016arXiv

Work function of bulk-insulating topological insulator Bi2-xSbxTe3-ySey

Recent discovery of bulk insulating topological insulator (TI) Bi2-xSbxTe3-ySey paved a pathway toward practical device application of TIs. For realizing TI-based devices, it is necessary to contact TIs with a metal. Since the band-bending at the interface dominates the character of devices, knowledge of TIs' work function is of essential importance. We have determined the compositional dependence of work function in Bi2-xSbxTe3-ySey by high-resolution photoemission spectroscopy. The obtained work-function values (4.95-5.20 eV) show a systematic variation with the composition, well tracking the energy shift of the surface chemical potential seen by angle-resolved photoemission spectroscopy. The present result serves as a useful guide for developing TI-based electronic devices.

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preprint2010arXiv

Direct Evidence for the Dirac-Cone Topological Surface States in Ternary Chalcogenide TlBiSe2

We have performed high-resolution angle-resolved photoemission spectroscopy on TlBiSe2, which is a member of the ternary chalcogenides theoretically proposed as candidates for a new class of three-dimensional topological insulators. By measuring the energy band dispersions over the entire surface Brillouin zone, we found a direct evidence for a non-trivial surface metallic state showing a X-shaped energy dispersion within the bulk band gap. The present result unambiguously establishes that TlBiSe2 is a strong topological insulator with a single Dirac cone at the Brillouin-zone center. The observed bulk band gap of 0.4 eV is the largest among known topological insulators, making TlBiSe2 the most promising material for studying room-temperature topological phenomena.

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