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Seigo Souma

Seigo Souma appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.str-elcond-mat.mtrl-sci

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Published work

7 published item(s)

preprint2022arXiv

Development of a versatile micro-focused angle-resolved photoemission spectroscopy system with Kirkpatrick-Baez mirror optics

Angle-resolved photoemission spectroscopy using a micro-focused beam spot (micro-ARPES) is becoming a powerful tool to elucidate key electronic states of exotic quantum materials. We have developed a versatile micro-ARPES system based on synchrotron radiation beam focused with a Kirkpatrick-Baez mirror optics. The mirrors are monolithically installed on a stage, which is driven with five-axes motion, and are vibrationally separated from the ARPES measurement system. Spatial mapping of the Auphotolithography pattern on Si signifies the beam spot size of 10 $μ$m (horizontal) x 12 $μ$m (vertical) at the sample position, which is well suited to resolve the fine structure in local electronic states. Utilization of the micro beam and the high precision sample motion system enables the accurate spatially resolved band-structure mapping, as demonstrated by the observation of a small band anomaly associated with tiny sample bending near the edge of a cleaved topological insulator single crystal.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Observation of inverted band structure in topological Dirac-semimetal candidate CaAuAs

We have performed high-resolution angle-resolved photoemission spectroscopy of ternary pnictide CaAuAs which is predicted to be a three-dimensional topological Dirac semimetal (TDS). By accurately determining the bulk-band structure, we have revealed the coexistence of three-dimensional and quasi-two-dimensional Fermi surfaces with dominant hole carriers. The band structure around the Brillouin-zone center is characterized by an energy overlap between hole and electron pockets, in excellent agreement with first-principles band-structure calculations. This indicates the occurrence of bulk-band inversion, supporting the TDS state in CaAuAs. Because of the high tunability in the chemical composition besides the TDS nature, CaAuAs provides a precious opportunity for investigating the quantum phase transition from TDS to other exotic topological phases.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Signature of band inversion in the antiferromagnetic phase of axion insulator candidate EuIn2As2

We have performed angle-resolved photoemission spectroscopy on EuIn2As2 which is predicted to be an axion insulator in the antiferromagnetic state. By utilizing soft-x-ray and vacuum-ultraviolet photons, we revealed a three-dimensional hole pocket centered at the Gamma point of bulk Brillouin zone together with a heavily hole-doped surface state in the paramagnetic phase. Upon entering the antiferromagnetic phase, the band structure exhibits a marked reconstruction characterized by the emergence of a "M"-shaped bulk band near the Fermi level. The qualitative agreement with first-principles band-structure calculations suggests the occurrence of bulk-band inversion at the Gamma point in the antiferromagnetic phase. We suggest that EuIn2As2 provides a good opportunity to study the exotic quantum phases associated with possible axion-insulator phase.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Unusual temperature evolution of band structure of Bi(111) studied by angle-resolved photoemission spectroscopy and density functional theory

We have performed angle-resolved photoemission spectroscopy of Bi(111) thin films grown on Si(111), and investigated the evolution of band structure with temperature. We revealed an unexpectedly large temperature variation of the energy dispersion for the Rashba-split surface state and the quantum-well states, as seen in the highly momentum-dependent energy shift as large as 0.1 eV. A comparison of the band dispersion between experiment and first-principles band-structure calculations suggests that the interlayer spacing at the topmost Bi bilayer expands upon temperature increase. The present study provides a new pathway for investigating the interplay between lattice and electronic states through the temperature dependence of band structure.

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preprint2016arXiv

Metal-insulator transition and tunable Dirac-cone surface state in the topological insulator TlBi1-xSbxTe2 studied by angle-resolved photoemission

We report a systematic angle-resolved photoemission spectroscopy on topological insulator (TI) TlBi1-xSbxTe2 which is bulk insulating at 0.5 < x < 0.9 and undergoes a metal-insulator-metal transition with the Sb content x. We found that this transition is characterized by a systematic hole doping with increasing x, which results in the Fermi-level crossings of the bulk conduction and valence bands at x~ 0 and x~1, respectively. The Dirac point of the topological surface state is gradually isolated from the valence-band edge, accompanied by a sign reversal of Dirac carriers. We also found that the Dirac velocity is the largest among known solid-solution TI systems. The TlBi1-xSbxTe2 system thus provides an excellent platform for Dirac-cone engineering and device applications of TIs.

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preprint2016arXiv

Work function of bulk-insulating topological insulator Bi2-xSbxTe3-ySey

Recent discovery of bulk insulating topological insulator (TI) Bi2-xSbxTe3-ySey paved a pathway toward practical device application of TIs. For realizing TI-based devices, it is necessary to contact TIs with a metal. Since the band-bending at the interface dominates the character of devices, knowledge of TIs' work function is of essential importance. We have determined the compositional dependence of work function in Bi2-xSbxTe3-ySey by high-resolution photoemission spectroscopy. The obtained work-function values (4.95-5.20 eV) show a systematic variation with the composition, well tracking the energy shift of the surface chemical potential seen by angle-resolved photoemission spectroscopy. The present result serves as a useful guide for developing TI-based electronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Direct Evidence for the Dirac-Cone Topological Surface States in Ternary Chalcogenide TlBiSe2

We have performed high-resolution angle-resolved photoemission spectroscopy on TlBiSe2, which is a member of the ternary chalcogenides theoretically proposed as candidates for a new class of three-dimensional topological insulators. By measuring the energy band dispersions over the entire surface Brillouin zone, we found a direct evidence for a non-trivial surface metallic state showing a X-shaped energy dispersion within the bulk band gap. The present result unambiguously establishes that TlBiSe2 is a strong topological insulator with a single Dirac cone at the Brillouin-zone center. The observed bulk band gap of 0.4 eV is the largest among known topological insulators, making TlBiSe2 the most promising material for studying room-temperature topological phenomena.

0 citations0 reviewsNo code linkedOpen access